MD4510C1 - Method for growth of n+-p-p+ InP structure for solar cells - Google Patents

Method for growth of n+-p-p+ InP structure for solar cells

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Publication number
MD4510C1
MD4510C1 MDA20160074A MD20160074A MD4510C1 MD 4510 C1 MD4510 C1 MD 4510C1 MD A20160074 A MDA20160074 A MD A20160074A MD 20160074 A MD20160074 A MD 20160074A MD 4510 C1 MD4510 C1 MD 4510C1
Authority
MD
Moldova
Prior art keywords
growth
inp
solar cells
epitaxial layer
pinp
Prior art date
Application number
MDA20160074A
Other languages
Romanian (ro)
Russian (ru)
Other versions
MD4510B1 (en
Inventor
Василе БОТНАРЮК
Петру ГАШИН
Леонид ГОРЧАК
Андрей КОВАЛ
Борис ЧИНИК
Симион РАЕВСКИЙ
Original Assignee
Государственный Университет Молд0
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Государственный Университет Молд0 filed Critical Государственный Университет Молд0
Priority to MDA20160074A priority Critical patent/MD4510C1/en
Publication of MD4510B1 publication Critical patent/MD4510B1/en
Publication of MD4510C1 publication Critical patent/MD4510C1/en

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Abstract

The invention relates to semiconductor technology and can be used in solar radiation conversion devices.The method for growth of n+-p-p+ InP structure for solar cells comprises growth of epitaxial layer pInP on p+InP substrates with the crystallographic orientation (100), the disorientation of 3…5° toward (110) and the charge carrier concentration of 1…3·1018 cm-3, growth of epitaxial layer n+InP and deposition of ohmic contacts. The n+InP layer is grown after the gas etching of the reactor and the epitaxial layer pInP.
MDA20160074A 2016-06-23 2016-06-23 Method for growth of n+-p-p+ InP structure for solar cells MD4510C1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
MDA20160074A MD4510C1 (en) 2016-06-23 2016-06-23 Method for growth of n+-p-p+ InP structure for solar cells

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
MDA20160074A MD4510C1 (en) 2016-06-23 2016-06-23 Method for growth of n+-p-p+ InP structure for solar cells

Publications (2)

Publication Number Publication Date
MD4510B1 MD4510B1 (en) 2017-08-31
MD4510C1 true MD4510C1 (en) 2018-03-31

Family

ID=59759578

Family Applications (1)

Application Number Title Priority Date Filing Date
MDA20160074A MD4510C1 (en) 2016-06-23 2016-06-23 Method for growth of n+-p-p+ InP structure for solar cells

Country Status (1)

Country Link
MD (1) MD4510C1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MD4554C1 (en) * 2017-10-18 2018-09-30 Государственный Университет Молд0 Process for increasing the efficiency of photovoltaic cells based on p+InP-p-InP-n+CdS

Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1011979A (en) * 1959-06-18 1965-12-01 Monsanto Co Production of epitaxial films
GB1038879A (en) * 1962-07-13 1966-08-10 Monsanto Co Production of chemical compounds and of epitaxial films formed therefrom
FR2092896A1 (en) * 1970-06-29 1972-01-28 North American Rockwell Epitaxial film growth - of semiconducting material, by decomposition of organo metallic cpds
MD626G2 (en) * 1994-01-13 1997-06-30 Государственный Университет Молд0 Process for heterostructure P+ InP-PInP/CdS and P+GaAs-pGaAs/CdS obtaining
MD673G2 (en) * 1994-05-24 1997-08-31 Государственный Университет Молд0 Process for InP layers production
JP2000223422A (en) * 1999-01-29 2000-08-11 Sumitomo Electric Ind Ltd Semiconductor epitaxial wafer, manufacture thereof, and semiconductor device
US20060150895A1 (en) * 2000-09-01 2006-07-13 Ngk Insulators, Ltd. Apparatus for fabricating a III-V nitride film and a method for fabricating the same
JP2008270484A (en) * 2007-04-19 2008-11-06 Shin Etsu Handotai Co Ltd Method for manufacturing compound semiconductor epitaxial wafer
MD151Z (en) * 2008-12-30 2010-09-30 Государственный Университет Молд0 Process for growth of GaAs epitaxial layers into a horizontal reactor
UA54800U (en) * 2010-05-19 2010-11-25 Сычикова Яна Александровна METHOD FOR GETTING THE FILM ON POROUS LAYER SUBSTRATE InP
US20120125392A1 (en) * 2010-11-19 2012-05-24 The Boeing Company TYPE-II HIGH BANDGAP TUNNEL JUNCTIONS OF InP LATTICE CONSTANT FOR MULTIJUNCTION SOLAR CELLS
MD4280B1 (en) * 2013-09-04 2014-03-31 Universitatea De Stat Din Moldova pInP-nCdS structure growth method
MD972Y (en) * 2015-02-19 2015-11-30 Universitatea De Stat Din Moldova Method for p+InP-p-InP-n+CdS structure growth for photovoltaic cells

Patent Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1011979A (en) * 1959-06-18 1965-12-01 Monsanto Co Production of epitaxial films
GB1038879A (en) * 1962-07-13 1966-08-10 Monsanto Co Production of chemical compounds and of epitaxial films formed therefrom
FR2092896A1 (en) * 1970-06-29 1972-01-28 North American Rockwell Epitaxial film growth - of semiconducting material, by decomposition of organo metallic cpds
MD626G2 (en) * 1994-01-13 1997-06-30 Государственный Университет Молд0 Process for heterostructure P+ InP-PInP/CdS and P+GaAs-pGaAs/CdS obtaining
MD673G2 (en) * 1994-05-24 1997-08-31 Государственный Университет Молд0 Process for InP layers production
JP2000223422A (en) * 1999-01-29 2000-08-11 Sumitomo Electric Ind Ltd Semiconductor epitaxial wafer, manufacture thereof, and semiconductor device
US20060150895A1 (en) * 2000-09-01 2006-07-13 Ngk Insulators, Ltd. Apparatus for fabricating a III-V nitride film and a method for fabricating the same
JP2008270484A (en) * 2007-04-19 2008-11-06 Shin Etsu Handotai Co Ltd Method for manufacturing compound semiconductor epitaxial wafer
MD151Z (en) * 2008-12-30 2010-09-30 Государственный Университет Молд0 Process for growth of GaAs epitaxial layers into a horizontal reactor
UA54800U (en) * 2010-05-19 2010-11-25 Сычикова Яна Александровна METHOD FOR GETTING THE FILM ON POROUS LAYER SUBSTRATE InP
US20120125392A1 (en) * 2010-11-19 2012-05-24 The Boeing Company TYPE-II HIGH BANDGAP TUNNEL JUNCTIONS OF InP LATTICE CONSTANT FOR MULTIJUNCTION SOLAR CELLS
MD4280B1 (en) * 2013-09-04 2014-03-31 Universitatea De Stat Din Moldova pInP-nCdS structure growth method
MD972Y (en) * 2015-02-19 2015-11-30 Universitatea De Stat Din Moldova Method for p+InP-p-InP-n+CdS structure growth for photovoltaic cells

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
C.J.Keavney and M.B.Spitzer. Indium phosphide solar cells made by ion implantation. Appl.Phys.Lett.52 (17), 25 April 1988, p.1439-1440 *
Mitsuru Sugo, Akio Yamamoto and Masafumi Yamaguchi. N+-p-p+inp Structure inp Solar Cells Grown by Organometallic Vapor-Phase Epitaxy. IEEE TRANSACTIONS ON ELECTRON DEVICES. VOL. ED-34. NO.4. APRIL, 1987. PP.772-777 *
Vasile BOTNARIUC, Leonid GORCEAC, Boris CINIC, Andrei COVAL, Ion INCULEŢ, Simion RAEVSCHI, Celule solare cu homojoncţiune din fosfură de indiu, Studia Universitatis Moldaviae, Revistă Ştiinţifică a Universităţii de Stat din Moldova, 2013, nr.2(62) *

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Publication number Publication date
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FG4A Patent for invention issued
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