MD4554C1 - Process for increasing the efficiency of photovoltaic cells based on p+InP-p-InP-n+CdS - Google Patents
Process for increasing the efficiency of photovoltaic cells based on p+InP-p-InP-n+CdSInfo
- Publication number
- MD4554C1 MD4554C1 MDA20170092A MD20170092A MD4554C1 MD 4554 C1 MD4554 C1 MD 4554C1 MD A20170092 A MDA20170092 A MD A20170092A MD 20170092 A MD20170092 A MD 20170092A MD 4554 C1 MD4554 C1 MD 4554C1
- Authority
- MD
- Moldova
- Prior art keywords
- inp
- cds
- deposition
- board
- increasing
- Prior art date
Links
Landscapes
- Photovoltaic Devices (AREA)
Abstract
The invention relates to semiconductor technology and can be used, in particular, in photoelectric converters.The process for increasing the efficiency of photovoltaic cells based on p+InP-p-InP-n+CdS involves the growth of the p-InP layer on a substrate, made in the form of a p+InP board with the crystallographic orientation (100), disorientation of 3…5° in the direction ( 110) and the charge carrier concentration of 1018 cm-3, deposition, on the frontal part of the board, using the method of quasi-closed volume of the n+CdS layer, deposition of an ohmic contact of Ag+Zn on the reverse side of the board, its thermal treatment at a temperature of 450°C, deposition of an ohmic contact of In onto the n+CdS layer, its thermal treatment at a temperature of 250°C and deposition by the pulverization method, at a temperature of 300°C, of a ZnO antireflection layer.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
MDA20170092A MD4554C1 (en) | 2017-10-18 | 2017-10-18 | Process for increasing the efficiency of photovoltaic cells based on p+InP-p-InP-n+CdS |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
MDA20170092A MD4554C1 (en) | 2017-10-18 | 2017-10-18 | Process for increasing the efficiency of photovoltaic cells based on p+InP-p-InP-n+CdS |
Publications (2)
Publication Number | Publication Date |
---|---|
MD4554B1 MD4554B1 (en) | 2018-02-28 |
MD4554C1 true MD4554C1 (en) | 2018-09-30 |
Family
ID=61282887
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
MDA20170092A MD4554C1 (en) | 2017-10-18 | 2017-10-18 | Process for increasing the efficiency of photovoltaic cells based on p+InP-p-InP-n+CdS |
Country Status (1)
Country | Link |
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MD (1) | MD4554C1 (en) |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL252729A (en) * | 1959-06-18 | |||
CN1237272A (en) * | 1997-08-27 | 1999-12-01 | 松下电器产业株式会社 | Silicon carbide substrate, process for producing the same, and semiconductor element containing silicon carbide substrate |
JP3920103B2 (en) * | 2002-01-31 | 2007-05-30 | 大阪府 | Insulating layer embedded type semiconductor silicon carbide substrate manufacturing method and manufacturing apparatus thereof |
CN101313092B (en) * | 2005-08-26 | 2013-08-21 | 斯莫特克有限公司 | Interconnects and heat dissipators based on nanostructures |
MD3372C2 (en) * | 2006-03-31 | 2008-02-29 | ШИШЯНУ Серджиу | Process for obtaining photocells (variants) |
JP5448304B2 (en) * | 2007-04-19 | 2014-03-19 | パナソニック株式会社 | Semiconductor device |
MD151Z (en) * | 2008-12-30 | 2010-09-30 | Государственный Университет Молд0 | Process for growth of GaAs epitaxial layers into a horizontal reactor |
US11417788B2 (en) * | 2010-11-19 | 2022-08-16 | The Boeing Company | Type-II high bandgap tunnel junctions of InP lattice constant for multijunction solar cells |
MD4261B1 (en) * | 2011-05-12 | 2013-11-30 | Государственный Университет Молд0 | Method for manufacturing a semiconductor device with relief p-n junction (embodiments) |
MD4280C1 (en) * | 2013-09-04 | 2014-10-31 | Государственный Университет Молд0 | pInP-nCdS structure growth method |
MD972Z (en) * | 2015-02-19 | 2016-06-30 | Государственный Университет Молд0 | Method for p+InP-p-InP-n+CdS structure growth for photovoltaic cells |
MD4510C1 (en) * | 2016-06-23 | 2018-03-31 | Государственный Университет Молд0 | Method for growth of n+-p-p+ InP structure for solar cells |
-
2017
- 2017-10-18 MD MDA20170092A patent/MD4554C1/en not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
MD4554B1 (en) | 2018-02-28 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
FG4A | Patent for invention issued | ||
KA4A | Patent for invention lapsed due to non-payment of fees (with right of restoration) |