MD3372C2 - Process for obtaining photocells (variants) - Google Patents
Process for obtaining photocells (variants) Download PDFInfo
- Publication number
- MD3372C2 MD3372C2 MDA20060106A MD20060106A MD3372C2 MD 3372 C2 MD3372 C2 MD 3372C2 MD A20060106 A MDA20060106 A MD A20060106A MD 20060106 A MD20060106 A MD 20060106A MD 3372 C2 MD3372 C2 MD 3372C2
- Authority
- MD
- Moldova
- Prior art keywords
- deposition
- diffusion
- wafer
- novelty
- variant
- Prior art date
Links
- 238000000034 method Methods 0.000 title abstract 13
- 238000000151 deposition Methods 0.000 abstract 9
- 230000008021 deposition Effects 0.000 abstract 9
- 238000009792 diffusion process Methods 0.000 abstract 9
- 239000012535 impurity Substances 0.000 abstract 8
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 abstract 6
- 230000015572 biosynthetic process Effects 0.000 abstract 5
- 239000004065 semiconductor Substances 0.000 abstract 5
- 230000003647 oxidation Effects 0.000 abstract 4
- 238000007254 oxidation reaction Methods 0.000 abstract 4
- 229910052786 argon Inorganic materials 0.000 abstract 3
- 238000005234 chemical deposition Methods 0.000 abstract 3
- -1 for example Substances 0.000 abstract 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 abstract 2
- 239000007789 gas Substances 0.000 abstract 2
- 239000011261 inert gas Substances 0.000 abstract 2
- 239000002184 metal Substances 0.000 abstract 2
- 229910052751 metal Inorganic materials 0.000 abstract 2
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 1
- 238000004140 cleaning Methods 0.000 abstract 1
- 229910052802 copper Inorganic materials 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 abstract 1
- 229910044991 metal oxide Inorganic materials 0.000 abstract 1
- 150000004706 metal oxides Chemical class 0.000 abstract 1
- 229910052759 nickel Inorganic materials 0.000 abstract 1
- 239000001301 oxygen Substances 0.000 abstract 1
- 229910052760 oxygen Inorganic materials 0.000 abstract 1
- 239000000126 substance Substances 0.000 abstract 1
- 238000007738 vacuum evaporation Methods 0.000 abstract 1
Landscapes
- Photovoltaic Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
The invention relates to the technology of semiconductor devices, namely to processes for obtaining photovoltaic cells.The process, according to the first variant, includes processes for chemical application or deposition from the impurity film vapours onto the surface of the semiconductor wafer, for diffusion, oxidation and deposition of ohmic contacts. Novelty consists in that the processes for diffusion of impurities from different sources with formation of n+ - p or p+ - n, or n+ - p - p+ type junctions, for oxidation, deposition of ohmic contacts, and deposition of antireflecting films are carried out with rapid photothermal processing.Novelty of the process, according to the second variant, consists in that onto one or both opposite surfaces of the “p” or “n”-type semiconductor wafer it is deposited a diffusion source in the form of vitreous film doped with one of the donor or acceptor impurities, for example, phosphorosilicate or borosilicate, by the method of anodic oxidation or chemical deposition in the presence of ultra-violet rays or in the absence of light, with subsequent rapid photothermal processing of the wafer, impurity diffusion with formation of n+ - p, or p+ - n, or n+ - p - p+, or p+ - n - n+ type junctions in vacuum, in the air or in the presence of inert gas, for example, argon, and deposition of antireflecting films.Novelty of the process, according to the third variant, consists in that onto one of the surfaces of the semiconductor “p” or “n”-type wafer it is deposited a diffusion source in the form of vitreous film doped with one of the donor impurities, for example, phosphorosilicate, and onto the opposite surface of the semiconductor wafer it is deposited another diffusion acceptor-type source in the form of metal film, for example, aluminic, by the method of vacuum evaporation, or anodic oxidation, or chemical deposition in the presence of ultra-violet rays or in the absence of light, with subsequent photothermal processing of the wafer, impurity diffusion with formation of n+ - p or p+ - n, or n+ - p - p+, or p+ - n - n type junctions in vacuum, in the air or in the presence of inert gas, for example, argon, and deposition of antireflecting films.Novelty of the process, according to the fourth variant, consists in that it includes the processes for diffusion of impurities from different sources with formation of junctions according to claims 1, 2 or 3, then after cleaning the wafer surface there takes place deposition of metal ohmic contacts, for example, Al or Ni, or Cu, or Ag paste, or transparent ohmic contacts of InSnO, with subsequent rapid photothermal processing in vacuum, in the air or in a chamber with gases, for example, argon, and deposition of antireflecting films.Novelty of the process, according to the fifth variant, consists in that it includes the processes for diffusion of impurities from different sources with formation of junctions and deposition of ohmic contacts according to claims 1, 2, 3, or 4, afterwards follows the chemical deposition of the transparent film with antireflecting properties from metal oxide, for example, ZnO2 or TiO2, with subsequent rapid photothermal processing in vacuum, in the air or in a chamber with gases, for example, with oxygen.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| MDA20060106A MD3372C2 (en) | 2006-03-31 | 2006-03-31 | Process for obtaining photocells (variants) |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| MDA20060106A MD3372C2 (en) | 2006-03-31 | 2006-03-31 | Process for obtaining photocells (variants) |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| MD3372B1 MD3372B1 (en) | 2007-07-31 |
| MD3372C2 true MD3372C2 (en) | 2008-02-29 |
Family
ID=38331514
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| MDA20060106A MD3372C2 (en) | 2006-03-31 | 2006-03-31 | Process for obtaining photocells (variants) |
Country Status (1)
| Country | Link |
|---|---|
| MD (1) | MD3372C2 (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| MD20080058A (en) * | 2008-02-25 | 2009-08-31 | Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы | Device for obtaining superconducting layers |
| MD175Z (en) * | 2008-02-25 | 2010-10-31 | Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы | Device for the obtaining of superconducting films |
| MD353Z (en) * | 2010-02-24 | 2011-10-31 | Институт Электронной Инженерии И Промышленных Технологий | Superconductor spin valve |
| MD4182C1 (en) * | 2011-04-15 | 2013-04-30 | Государственный Университет Молд0 | Semiconductor device with relief p-n junction (embodiments) |
| MD4261B1 (en) * | 2011-05-12 | 2013-11-30 | Государственный Университет Молд0 | Method for manufacturing a semiconductor device with relief p-n junction (embodiments) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| MD4554C1 (en) * | 2017-10-18 | 2018-09-30 | Государственный Университет Молд0 | Process for increasing the efficiency of photovoltaic cells based on p+InP-p-InP-n+CdS |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6569249B1 (en) * | 2000-04-18 | 2003-05-27 | Clemson University | Process for forming layers on substrates |
-
2006
- 2006-03-31 MD MDA20060106A patent/MD3372C2/en not_active IP Right Cessation
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6569249B1 (en) * | 2000-04-18 | 2003-05-27 | Clemson University | Process for forming layers on substrates |
Non-Patent Citations (7)
| Title |
|---|
| A. Simaşchevici, L. Gorceac, D. Şerban. Conversia fotovoltaică a energiei solare. Chişinău, 2002, CE USM * |
| G. Andra, J. Bergmann, F. Falk, E. Ose. Multicrystalline silicon thin film Solar Cells on Glass. 19th Europ. Photovoltaic Solar Energy Conf. Paris, 2004, p. 872-875 * |
| J. Carabe and J. J. Gandia. Opto-electronic review 12 (1), 1-6, 2004 * |
| P. Panek, M. Lipinski, E. Beltowka-Lehman, K. Drabezyk and R. Ciach. Industrial technology of multicrystalline silicon solar cells. Opto-electronics Review 11(4), 269-275, 2003 * |
| R. Lidermann, B. M. Damiani, A. Rohatgi. Novel processing of solar cells with porous silicon texturing, 2000 * |
| R. Singh, M. Fakhruddin, K. F. Poole. Rapid photothermal processing as semiconductor manufacturing technologz for the 21st century. Applied Surface Science 168, p. 198-203, 2000 * |
| S. T. Şişianu, T. S. Şişianu, S. K. Railean. Shallow p-n Junction Formed in Silicon Using Pulsed Photon Annealing. Semiconductors, vol. 36, No 5, 2002, p. 567-581, Translated from Fizika i Tekhnika Poluprovodnicov, Vol.36, No 5, 2002, p. 611-617 * |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| MD20080058A (en) * | 2008-02-25 | 2009-08-31 | Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы | Device for obtaining superconducting layers |
| MD175Z (en) * | 2008-02-25 | 2010-10-31 | Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы | Device for the obtaining of superconducting films |
| MD353Z (en) * | 2010-02-24 | 2011-10-31 | Институт Электронной Инженерии И Промышленных Технологий | Superconductor spin valve |
| MD4182C1 (en) * | 2011-04-15 | 2013-04-30 | Государственный Университет Молд0 | Semiconductor device with relief p-n junction (embodiments) |
| MD4261B1 (en) * | 2011-05-12 | 2013-11-30 | Государственный Университет Молд0 | Method for manufacturing a semiconductor device with relief p-n junction (embodiments) |
Also Published As
| Publication number | Publication date |
|---|---|
| MD3372B1 (en) | 2007-07-31 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FG4A | Patent for invention issued | ||
| KA4A | Patent for invention lapsed due to non-payment of fees (with right of restoration) | ||
| MM4A | Patent for invention definitely lapsed due to non-payment of fees |