MD175Z - Device for the obtaining of superconducting films - Google Patents

Device for the obtaining of superconducting films Download PDF

Info

Publication number
MD175Z
MD175Z MDS20090234A MDS20090234A MD175Z MD 175 Z MD175 Z MD 175Z MD S20090234 A MDS20090234 A MD S20090234A MD S20090234 A MDS20090234 A MD S20090234A MD 175 Z MD175 Z MD 175Z
Authority
MD
Moldova
Prior art keywords
obtaining
substrate
vacuum
superconducting films
cathode holder
Prior art date
Application number
MDS20090234A
Other languages
Romanian (ro)
Russian (ru)
Inventor
Анатол СИДОРЕНКО
Владимир ЗДРАВКОВ
Роман МОРАРЬ
Original Assignee
Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы filed Critical Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы
Priority to MDS20090234A priority Critical patent/MD175Z/en
Publication of MD175Y publication Critical patent/MD175Y/en
Publication of MD175Z publication Critical patent/MD175Z/en

Links

Landscapes

  • Superconductors And Manufacturing Methods Therefor (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

Invenţia se referă la supraconductori, şi anume la dispozitive de depunere în vid a peliculelor fine de calitate înaltă din materiale supraconductoare şi poate fi utilizată în construcţia de aparate.Dispozitivul de obţinere a peliculelor supraconductoare include o cameră de vid (1), dotată cu pompe de vid (2) şi în care sunt amplasate un magnetron (3), un suport-catod (4) cu ţintă (6), pe care este montat un ecran (5), şi un substrat (7). Suportul-catod (4) este fixat într-un mecanism (8) care asigură rotaţia-translaţia lui deasupra substratului (7).The invention relates to superconductors, namely to devices for vacuum deposition of high quality fine films from superconducting materials and can be used in the construction of apparatus. The device for obtaining superconductor films includes a vacuum chamber (1), equipped with pumps. vacuum (2) and in which a magnetron (3), a cathode holder (4) with a target (6), on which a screen (5), and a substrate (7) are mounted. The cathode holder (4) is fixed in a mechanism (8) which ensures its rotation-translation above the substrate (7).

MDS20090234A 2008-02-25 2008-02-25 Device for the obtaining of superconducting films MD175Z (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
MDS20090234A MD175Z (en) 2008-02-25 2008-02-25 Device for the obtaining of superconducting films

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
MDS20090234A MD175Z (en) 2008-02-25 2008-02-25 Device for the obtaining of superconducting films

Publications (2)

Publication Number Publication Date
MD175Y MD175Y (en) 2010-03-31
MD175Z true MD175Z (en) 2010-10-31

Family

ID=43568947

Family Applications (1)

Application Number Title Priority Date Filing Date
MDS20090234A MD175Z (en) 2008-02-25 2008-02-25 Device for the obtaining of superconducting films

Country Status (1)

Country Link
MD (1) MD175Z (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2503096C1 (en) * 2012-09-20 2013-12-27 Владимир Михайлович Борисов Apparatus and method of depositing superconducting layers

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001059815A2 (en) * 2000-02-09 2001-08-16 Semitool, Inc. Method and apparatus for processing a microelectronic workpiece at an elevated temperature
MD2289G2 (en) * 2003-03-14 2004-08-31 Ион ТИГИНЯНУ Process for manufacture of the planar optic device with waveguide
MD2804G2 (en) * 2004-10-19 2006-02-28 Ион ТИГИНЯНУ Process for nanocomposite obtaining
MD3029C2 (en) * 2004-09-06 2006-11-30 ШИШЯНУ Серджиу Process for sensor obtaining (variants)
MD3088G2 (en) * 2005-08-10 2007-03-31 Институт Прикладной Физики Академии Наук Молдовы Process for obtaining metal nanotubes
MD3372C2 (en) * 2006-03-31 2008-02-29 ШИШЯНУ Серджиу Process for obtaining photocells (variants)
MD4010F2 (en) * 2007-12-12 2010-01-29 Universitatea Tehnica A Moldovei Method for obtaining thin films of oxide semiconductors of In2O3
MD3894G2 (en) * 2008-02-22 2010-01-31 Государственный Университет Молд0 Gas sensor on base of vitreous chalcogenide semiconductors
  • 2008

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001059815A2 (en) * 2000-02-09 2001-08-16 Semitool, Inc. Method and apparatus for processing a microelectronic workpiece at an elevated temperature
MD2289G2 (en) * 2003-03-14 2004-08-31 Ион ТИГИНЯНУ Process for manufacture of the planar optic device with waveguide
MD3029C2 (en) * 2004-09-06 2006-11-30 ШИШЯНУ Серджиу Process for sensor obtaining (variants)
MD2804G2 (en) * 2004-10-19 2006-02-28 Ион ТИГИНЯНУ Process for nanocomposite obtaining
MD3088G2 (en) * 2005-08-10 2007-03-31 Институт Прикладной Физики Академии Наук Молдовы Process for obtaining metal nanotubes
MD3372C2 (en) * 2006-03-31 2008-02-29 ШИШЯНУ Серджиу Process for obtaining photocells (variants)
MD4010F2 (en) * 2007-12-12 2010-01-29 Universitatea Tehnica A Moldovei Method for obtaining thin films of oxide semiconductors of In2O3
MD3894G2 (en) * 2008-02-22 2010-01-31 Государственный Университет Молд0 Gas sensor on base of vitreous chalcogenide semiconductors

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
Hermn M.A., Sitter H. Molecular beam epitaxy – fundamentals and current status. ISBN 3-540-19075-9, Springer-Verlag-Berlin-Heidelberg-New York-London-Paris-Tokyo 1989, p. 1-382 *
Дедю В.И., Лыков А.Н., Махашвили Л.И. Малогабаритное устройство для магнетронного напыления. Физический Институт им. П.Н. Лебедева, Препринт № 92, Москва, 1987 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2503096C1 (en) * 2012-09-20 2013-12-27 Владимир Михайлович Борисов Apparatus and method of depositing superconducting layers

Also Published As

Publication number Publication date
MD175Y (en) 2010-03-31

Similar Documents

Publication Publication Date Title
TW201205818A (en) Oxide for semiconductor layer of thin-film transistor, sputtering target, and thin-film transistor
WO2007124879A3 (en) Homogeneous pvd coating device and method
ATE426690T1 (en) ROTATING TUBULAR SPUTTER TARGET ARRANGEMENT
TW200620421A (en) Apparatus for fabricating display device
WO2011028349A3 (en) Remote hydrogen plasma source of silicon containing film deposition
EP1746181A3 (en) Improved magnetron sputtering system for large-area substrates
NZ597840A (en) Apparatus for producing x-rays for use in imaging
TW200708195A (en) Organic el element, organic el display device, and process for producing organic el element
TW200802549A (en) Vertical plasma processing apparatus for semiconductor process
TW200606995A (en) A magnetron sputtering device, a cylindrical cathode and a method of coating thin multicomponent films on a substrate
CN104089570B (en) A kind of pressure drag sensing element and preparation method thereof
TW200702469A (en) Improved magnetron sputtering system for large-area substrates having removable anodes
EP1990443A3 (en) Method and apparatus for DC plasma assisted chemical vapor deposition in the absence of a positive column, and diamond thin film fabricated thereby
TW200634927A (en) Method of manufacturing semiconductor device
MD20080058A (en) Device for obtaining superconductive films
KR20200081184A (en) Film forming apparatus, film forming method and manufacturing method of electronic device
EP2477211A3 (en) Method for selective deposition of a semiconductor material
MY152203A (en) Methods of forming a window layer in a cadmium telluride based thin film photovoltaic device
Lee et al. Crystallinity, etchability, electrical and mechanical properties of Ga doped amorphous indium tin oxide thin films deposited by direct current magnetron sputtering
Fakhri et al. Enhanced stability against bias-stress of metal-oxide thin film transistors deposited at elevated temperatures
WO2005010953A3 (en) Boride thin films on silicon
TW201612344A (en) Sputtering device
PL2264224T3 (en) Apparatus for depositing a thin film of material on a substrate and regeneration process for such an apparatus
KR102784465B1 (en) Film forming apparatus, film forming method and manufacturing method of electronic device
TW200721505A (en) Thin film semiconductor element and display apparatus using the same

Legal Events

Date Code Title Description
KA4Y Short-term patent lapsed due to non-payment of fees (with right of restoration)