MD4010F2 - Method for obtaining thin films of oxide semiconductors of In2O3 - Google Patents

Method for obtaining thin films of oxide semiconductors of In2O3

Info

Publication number
MD4010F2
MD4010F2 MDA20070334A MD20070334A MD4010F2 MD 4010 F2 MD4010 F2 MD 4010F2 MD A20070334 A MDA20070334 A MD A20070334A MD 20070334 A MD20070334 A MD 20070334A MD 4010 F2 MD4010 F2 MD 4010F2
Authority
MD
Moldova
Prior art keywords
in2o3
oxide semiconductors
thin films
films
obtaining thin
Prior art date
Application number
MDA20070334A
Other languages
Romanian (ro)
Other versions
MD4010G2 (en
MD20070334A (en
Inventor
Ghenadii Korotcenkov
Original Assignee
Universitatea Tehnica A Moldovei
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Universitatea Tehnica A Moldovei filed Critical Universitatea Tehnica A Moldovei
Priority to MDA20070334A priority Critical patent/MD4010G2/en
Publication of MD20070334A publication Critical patent/MD20070334A/en
Publication of MD4010F2 publication Critical patent/MD4010F2/en
Publication of MD4010G2 publication Critical patent/MD4010G2/en

Links

Landscapes

  • Formation Of Insulating Films (AREA)
  • Oxygen, Ozone, And Oxides In General (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Compounds Of Alkaline-Earth Elements, Aluminum Or Rare-Earth Metals (AREA)

Abstract

The invention relates to the field of obtaining thin films of oxide semiconductors, particularly of In2O3. The method includes deposition of films by spray pyrolysis at the temperature of 450...550?C from aqueous InCl3 solutions with the metal salt concentration in the solution exceeding 0.2M with subsequent annealing in the neutral or oxygen-containing atmosphere at a temperature not less than 1000?C. The result of the invention consists in obtaining films with high texture in the direction of (100) having a thickness of 200à3000 nm with large size of the crystallographic plane surface of crystallites.
MDA20070334A 2007-12-12 2007-12-12 Method for obtaining thin films of oxide semiconductors of In2O3 MD4010G2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
MDA20070334A MD4010G2 (en) 2007-12-12 2007-12-12 Method for obtaining thin films of oxide semiconductors of In2O3

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
MDA20070334A MD4010G2 (en) 2007-12-12 2007-12-12 Method for obtaining thin films of oxide semiconductors of In2O3

Publications (3)

Publication Number Publication Date
MD20070334A MD20070334A (en) 2009-09-30
MD4010F2 true MD4010F2 (en) 2010-01-29
MD4010G2 MD4010G2 (en) 2010-08-31

Family

ID=43568782

Family Applications (1)

Application Number Title Priority Date Filing Date
MDA20070334A MD4010G2 (en) 2007-12-12 2007-12-12 Method for obtaining thin films of oxide semiconductors of In2O3

Country Status (1)

Country Link
MD (1) MD4010G2 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MD20080058A (en) * 2008-02-25 2009-08-31 Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы Device for obtaining superconducting layers
MD175Z (en) * 2008-02-25 2010-10-31 Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы Device for the obtaining of superconducting films
MD193Z (en) * 2009-06-04 2010-11-30 Институт Прикладной Физики Академии Наук Молдовы Process for the obtaining of polysulphide film
MD353Z (en) * 2010-02-24 2011-10-31 Институт Электронной Инженерии И Промышленных Технологий Superconductor spin valve

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2667437B1 (en) * 1990-09-28 1992-10-30 Commissariat Energie Atomique PROCESS FOR THE PREPARATION BY RAPID ANNEALING OF A THIN LAYER OF CRYSTALLIZED MATERIAL OF THE OXIDE TYPE AND SUBSTRATE COATED WITH A THIN LAYER OBTAINED BY THIS PROCESS.
JP2735422B2 (en) * 1991-12-03 1998-04-02 日鉄鉱業株式会社 Rutile single crystal processing method
RU2051207C1 (en) * 1992-02-27 1995-12-27 Санкт-Петербургский государственный университет Method for producing layers of metal hydroxides

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MD20080058A (en) * 2008-02-25 2009-08-31 Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы Device for obtaining superconducting layers
MD175Z (en) * 2008-02-25 2010-10-31 Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы Device for the obtaining of superconducting films
MD193Z (en) * 2009-06-04 2010-11-30 Институт Прикладной Физики Академии Наук Молдовы Process for the obtaining of polysulphide film
MD353Z (en) * 2010-02-24 2011-10-31 Институт Электронной Инженерии И Промышленных Технологий Superconductor spin valve

Also Published As

Publication number Publication date
MD4010G2 (en) 2010-08-31
MD20070334A (en) 2009-09-30

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FG4A Patent for invention issued
KA4A Patent for invention lapsed due to non-payment of fees (with right of restoration)
MM4A Patent for invention definitely lapsed due to non-payment of fees