MD20070334A - Method for obtaining thin films of oxide semiconductor - Google Patents
Method for obtaining thin films of oxide semiconductorInfo
- Publication number
- MD20070334A MD20070334A MDA20070334A MD20070334A MD20070334A MD 20070334 A MD20070334 A MD 20070334A MD A20070334 A MDA20070334 A MD A20070334A MD 20070334 A MD20070334 A MD 20070334A MD 20070334 A MD20070334 A MD 20070334A
- Authority
- MD
- Moldova
- Prior art keywords
- thin films
- films
- oxide semiconductor
- obtaining thin
- obtaining
- Prior art date
Links
Abstract
The invention relates to the field of obtaining films of metal oxides, particularly of In2O3, with great dimensions of the flat atomic surface of crystallites. The method for obtaining thin films of oxide semiconductors includes deposition of films by spray pyrolysis at the temperature of 450...550?C from aqueous InCl3 solutions with the metal salt concentration in the solution exceeding 0.2M with subsequent annealing in the neutral or oxygen-containing atmosphere at a temperature exceeding 1000?C.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
MDA20070334A MD4010G2 (en) | 2007-12-12 | 2007-12-12 | Method for obtaining thin films of oxide semiconductors of In2O3 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
MDA20070334A MD4010G2 (en) | 2007-12-12 | 2007-12-12 | Method for obtaining thin films of oxide semiconductors of In2O3 |
Publications (3)
Publication Number | Publication Date |
---|---|
MD20070334A true MD20070334A (en) | 2009-09-30 |
MD4010F2 MD4010F2 (en) | 2010-01-29 |
MD4010G2 MD4010G2 (en) | 2010-08-31 |
Family
ID=43568782
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
MDA20070334A MD4010G2 (en) | 2007-12-12 | 2007-12-12 | Method for obtaining thin films of oxide semiconductors of In2O3 |
Country Status (1)
Country | Link |
---|---|
MD (1) | MD4010G2 (en) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
MD175Z (en) * | 2008-02-25 | 2010-10-31 | Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы | Device for the obtaining of superconducting films |
MD20080058A (en) * | 2008-02-25 | 2009-08-31 | Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы | Device for obtaining superconducting layers |
MD193Z (en) * | 2009-06-04 | 2010-11-30 | Институт Прикладной Физики Академии Наук Молдовы | Process for the obtaining of polysulphide film |
MD353Z (en) * | 2010-02-24 | 2011-10-31 | Институт Электронной Инженерии И Промышленных Технологий | Superconductor spin valve |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2667437B1 (en) * | 1990-09-28 | 1992-10-30 | Commissariat Energie Atomique | PROCESS FOR THE PREPARATION BY RAPID ANNEALING OF A THIN LAYER OF CRYSTALLIZED MATERIAL OF THE OXIDE TYPE AND SUBSTRATE COATED WITH A THIN LAYER OBTAINED BY THIS PROCESS. |
JP2735422B2 (en) * | 1991-12-03 | 1998-04-02 | 日鉄鉱業株式会社 | Rutile single crystal processing method |
RU2051207C1 (en) * | 1992-02-27 | 1995-12-27 | Санкт-Петербургский государственный университет | Method for producing layers of metal hydroxides |
-
2007
- 2007-12-12 MD MDA20070334A patent/MD4010G2/en not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
MD4010G2 (en) | 2010-08-31 |
MD4010F2 (en) | 2010-01-29 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
Xu et al. | Facile and environmentally friendly solution-processed aluminum oxide dielectric for low-temperature, high-performance oxide thin-film transistors | |
Huang et al. | High-mobility solution-processed tin oxide thin-film transistors with high-κ alumina dielectric working in enhancement mode | |
Meyers et al. | Aqueous inorganic inks for low-temperature fabrication of ZnO TFTs | |
WO2018013778A8 (en) | Cvd mo deposition by using mooc14 | |
WO2012103528A3 (en) | Low-temperature fabrication of metal oxide thin films and nanomaterial-derived metal composite thin films | |
JP2011521477A5 (en) | ||
JP2010056541A5 (en) | ||
WO2011028377A3 (en) | High concentration water pulses for atomic layer deposition | |
TW201130056A (en) | Semiconductor element and method for manufacturing the same | |
JP2010103360A5 (en) | Method for manufacturing semiconductor device, oxide semiconductor, thin film transistor, and display device | |
Jeong et al. | Effects of Hf incorporation in solution-processed Hf-InZnO TFTs | |
Erdogan et al. | Effect of the oxidation temperature on microstructure and conductivity of ZnxNy thin films and their conversion into p-type ZnO: N films | |
JP2015519745A5 (en) | ||
TW201130055A (en) | Method for manufacturing oxide semiconductor film and method for manufacturing semiconductor device | |
WO2012040299A3 (en) | A thin-film photovoltaic device with a zinc magnesium oxide window layer | |
Park et al. | Aqueous zinc ammine complex for solution-processed ZnO semiconductors in thin film transistors | |
Raja et al. | Aging effects on the stability of nitrogen-doped and un-doped InGaZnO thin-film transistors | |
BR112015024056A2 (en) | photovoltaic structure and process for manufacturing a photovoltaic device | |
Kim et al. | Effects of H2/O2 mixed gas plasma treatment on electrical and optical property of indium tin oxide | |
MD20070334A (en) | Method for obtaining thin films of oxide semiconductor | |
Hwang et al. | Post-humid annealing of low-temperature solution-processed indium based metal oxide TFTs | |
JP2012119672A5 (en) | Method for manufacturing semiconductor device | |
Park et al. | High performance of solution-processed SnO2 thin-film transistors by promotion of photo-exposure time-dependent carrier transport during the pre-annealing stage | |
Kim et al. | Structural improvement for stabilization of photochemical hydrogen doping in ZnO thin film | |
WO2013057065A3 (en) | Ceramic product for use as a target |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
FG4A | Patent for invention issued | ||
KA4A | Patent for invention lapsed due to non-payment of fees (with right of restoration) | ||
MM4A | Patent for invention definitely lapsed due to non-payment of fees |