MD193Z - Process for the obtaining of polysulphide film - Google Patents

Process for the obtaining of polysulphide film

Info

Publication number
MD193Z
MD193Z MDS20090101A MDS20090101A MD193Z MD 193 Z MD193 Z MD 193Z MD S20090101 A MDS20090101 A MD S20090101A MD S20090101 A MDS20090101 A MD S20090101A MD 193 Z MD193 Z MD 193Z
Authority
MD
Moldova
Prior art keywords
polysulphide
obtaining
film
semiconductors
drying
Prior art date
Application number
MDS20090101A
Other languages
Romanian (ro)
Russian (ru)
Inventor
Василе ЖИТАРЬ
Владимир ПАВЛЕНКО
Original Assignee
Институт Прикладной Физики Академии Наук Молдовы
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Институт Прикладной Физики Академии Наук Молдовы filed Critical Институт Прикладной Физики Академии Наук Молдовы
Priority to MDS20090101A priority Critical patent/MD193Z/en
Publication of MD193Y publication Critical patent/MD193Y/en
Publication of MD193Z publication Critical patent/MD193Z/en

Links

Abstract

The invention relates to processes for the obtaining of semiconductors, particularly to a process for the obtaining of polysulphide semiconductors.The process, according to the invention, includes treatment of a support with water, drying thereof at the temperature of 373 K, mixing of the polysulphide pulverulent doped compound ZnxIn2S3+x (x = 1, 2, 3, 5) with water, deposition of the formed suspension on the support, drying of the obtained film and subsequent thermal treatment thereof under the conditions T·t = (6…9)·103 grade·h, where:T - temperature,t - treatment time.
MDS20090101A 2009-06-04 2009-06-04 Process for the obtaining of polysulphide film MD193Z (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
MDS20090101A MD193Z (en) 2009-06-04 2009-06-04 Process for the obtaining of polysulphide film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
MDS20090101A MD193Z (en) 2009-06-04 2009-06-04 Process for the obtaining of polysulphide film

Publications (2)

Publication Number Publication Date
MD193Y MD193Y (en) 2010-04-30
MD193Z true MD193Z (en) 2010-11-30

Family

ID=43569610

Family Applications (1)

Application Number Title Priority Date Filing Date
MDS20090101A MD193Z (en) 2009-06-04 2009-06-04 Process for the obtaining of polysulphide film

Country Status (1)

Country Link
MD (1) MD193Z (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MD299Z (en) * 2010-03-03 2011-10-31 Ирина КЯН Process for demonstration of advertising and entertaining information in the salon of vehicle and device for its realization

Citations (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MD975C2 (en) * 1997-12-18 1998-10-31 Институт Прикладной Физики Академии Наук Молдовы Process for obtaining thin films on the basis of arsenous glassy sulphide
MD1497G2 (en) * 1999-05-24 2001-03-31 Институт Прикладной Физики Академии Наук Молдовы Photoelectrochemical solar battery
MD1792G2 (en) * 2000-12-18 2002-05-31 Государственный Университет Молд0 Process for preparation of cadmium sulphide layers
MD2245G2 (en) * 2003-01-21 2004-02-29 Государственный Университет Молд0 Process for obtaining thin layers of oxidic semiconductors
MD2536G2 (en) * 2004-04-28 2005-03-31 Ион ТИГИНЯНУ Process for obtaining porous semiconductor structures
MD2556G2 (en) * 2004-06-01 2005-03-31 Ион ТИГИНЯНУ Process for semiconductor nanostructures obtaining
MD2562G2 (en) * 2002-02-13 2005-05-31 Институт Прикладной Физики Академии Наук Молдовы Process for polysulphide films obtaining
MD2585G2 (en) * 2004-06-01 2005-05-31 Ион ТИГИНЯНУ Process for semiconductor nanostructures obtaining
MD2610G2 (en) * 2004-04-28 2005-06-30 Ион ТИГИНЯНУ Process semiconductor porous surface obtaining
MD2714G2 (en) * 2004-10-19 2005-10-31 Ион ТИГИНЯНУ Process for obtaining porous semiconductor structures
MD2805G2 (en) * 2004-03-26 2006-02-28 Государственный Университет Молд0 Composition for obtaining thin stannic oxide films
MD2982G2 (en) * 2005-08-10 2006-10-31 Институт Прикладной Физики Академии Наук Молдовы Process for obtaining semiconductor nanostructures
MD3174G2 (en) * 2006-01-05 2007-05-31 Центр Оптоэлектроники Института Прикладной Физики Академии Наук Республики Молдова Photosensitive composite of amorphous chalcogenide semiconductor and organic polymer
MD3327G2 (en) * 2006-09-27 2007-12-31 Институт Прикладной Физики Академии Наук Молдовы Process for obtaining photosensitive composite from amorphous chalcogenide semiconductor and organic polymer
MD4010F2 (en) * 2007-12-12 2010-01-29 Universitatea Tehnica A Moldovei Method for obtaining thin films of oxide semiconductors of In2O3
  • 2009

Patent Citations (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MD975C2 (en) * 1997-12-18 1998-10-31 Институт Прикладной Физики Академии Наук Молдовы Process for obtaining thin films on the basis of arsenous glassy sulphide
MD1497G2 (en) * 1999-05-24 2001-03-31 Институт Прикладной Физики Академии Наук Молдовы Photoelectrochemical solar battery
MD1792G2 (en) * 2000-12-18 2002-05-31 Государственный Университет Молд0 Process for preparation of cadmium sulphide layers
MD2562G2 (en) * 2002-02-13 2005-05-31 Институт Прикладной Физики Академии Наук Молдовы Process for polysulphide films obtaining
MD2245G2 (en) * 2003-01-21 2004-02-29 Государственный Университет Молд0 Process for obtaining thin layers of oxidic semiconductors
MD2805G2 (en) * 2004-03-26 2006-02-28 Государственный Университет Молд0 Composition for obtaining thin stannic oxide films
MD2536G2 (en) * 2004-04-28 2005-03-31 Ион ТИГИНЯНУ Process for obtaining porous semiconductor structures
MD2610G2 (en) * 2004-04-28 2005-06-30 Ион ТИГИНЯНУ Process semiconductor porous surface obtaining
MD2556G2 (en) * 2004-06-01 2005-03-31 Ион ТИГИНЯНУ Process for semiconductor nanostructures obtaining
MD2585G2 (en) * 2004-06-01 2005-05-31 Ион ТИГИНЯНУ Process for semiconductor nanostructures obtaining
MD2714G2 (en) * 2004-10-19 2005-10-31 Ион ТИГИНЯНУ Process for obtaining porous semiconductor structures
MD2982G2 (en) * 2005-08-10 2006-10-31 Институт Прикладной Физики Академии Наук Молдовы Process for obtaining semiconductor nanostructures
MD3174G2 (en) * 2006-01-05 2007-05-31 Центр Оптоэлектроники Института Прикладной Физики Академии Наук Республики Молдова Photosensitive composite of amorphous chalcogenide semiconductor and organic polymer
MD3327G2 (en) * 2006-09-27 2007-12-31 Институт Прикладной Физики Академии Наук Молдовы Process for obtaining photosensitive composite from amorphous chalcogenide semiconductor and organic polymer
MD4010F2 (en) * 2007-12-12 2010-01-29 Universitatea Tehnica A Moldovei Method for obtaining thin films of oxide semiconductors of In2O3

Also Published As

Publication number Publication date
MD193Y (en) 2010-04-30

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Legal Events

Date Code Title Description
KA4Y Short-term patent lapsed due to non-payment of fees (with right of restoration)