MD2536G2 - Process for obtaining porous semiconductor structures - Google Patents

Process for obtaining porous semiconductor structures Download PDF

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Publication number
MD2536G2
MD2536G2 MDA20040098A MD20040098A MD2536G2 MD 2536 G2 MD2536 G2 MD 2536G2 MD A20040098 A MDA20040098 A MD A20040098A MD 20040098 A MD20040098 A MD 20040098A MD 2536 G2 MD2536 G2 MD 2536G2
Authority
MD
Moldova
Prior art keywords
onto
mask
semiconductor structures
porous semiconductor
obtaining porous
Prior art date
Application number
MDA20040098A
Other languages
Romanian (ro)
Russian (ru)
Other versions
MD2536F1 (en
Inventor
Ион ТИГИНЯНУ
Лилиан СЫРБУ
Ала КОЖОКАРУ
Вячеслав УРСАКИ
Original Assignee
Ион ТИГИНЯНУ
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ион ТИГИНЯНУ filed Critical Ион ТИГИНЯНУ
Priority to MDA20040098A priority Critical patent/MD2536G2/en
Publication of MD2536F1 publication Critical patent/MD2536F1/en
Publication of MD2536G2 publication Critical patent/MD2536G2/en

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  • Drying Of Semiconductors (AREA)
  • Weting (AREA)

Abstract

The invention relates to the semiconductor production technology, in particular to processes for obtaining porous semiconductor structures.The process for obtaining porous semiconductor structures consists in that onto the semiconductor's surface it is deposited a mask, onto the uncovered regions there are implanted high-energy ions, then the mask is removed, and the semiconductor surface is subjected to the electrochemical pickling. Novelty consists in that prior to pickling there is repeatedly deposited a mask mainly onto the regions which have been implanted with ions, onto the uncovered regions there are implanted ions of high-energy different from the previous one and it is removed the mask.
MDA20040098A 2004-04-28 2004-04-28 Process for obtaining porous semiconductor structures MD2536G2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
MDA20040098A MD2536G2 (en) 2004-04-28 2004-04-28 Process for obtaining porous semiconductor structures

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
MDA20040098A MD2536G2 (en) 2004-04-28 2004-04-28 Process for obtaining porous semiconductor structures

Publications (2)

Publication Number Publication Date
MD2536F1 MD2536F1 (en) 2004-08-31
MD2536G2 true MD2536G2 (en) 2005-03-31

Family

ID=32906668

Family Applications (1)

Application Number Title Priority Date Filing Date
MDA20040098A MD2536G2 (en) 2004-04-28 2004-04-28 Process for obtaining porous semiconductor structures

Country Status (1)

Country Link
MD (1) MD2536G2 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MD2714G2 (en) * 2004-10-19 2005-10-31 Ион ТИГИНЯНУ Process for obtaining porous semiconductor structures
MD2982G2 (en) * 2005-08-10 2006-10-31 Институт Прикладной Физики Академии Наук Молдовы Process for obtaining semiconductor nanostructures
MD3811G2 (en) * 2007-11-06 2009-08-31 Институт Прикладной Физики Академии Наук Молдовы Process for obtaining semiconductor nanostructural zones
MD193Z (en) * 2009-06-04 2010-11-30 Институт Прикладной Физики Академии Наук Молдовы Process for the obtaining of polysulphide film

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6518601B2 (en) * 2000-11-14 2003-02-11 Osram Opto Semiconductors Gmbh & Co. Ohg Light-emitting diode

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6518601B2 (en) * 2000-11-14 2003-02-11 Osram Opto Semiconductors Gmbh & Co. Ohg Light-emitting diode

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MD2714G2 (en) * 2004-10-19 2005-10-31 Ион ТИГИНЯНУ Process for obtaining porous semiconductor structures
MD2982G2 (en) * 2005-08-10 2006-10-31 Институт Прикладной Физики Академии Наук Молдовы Process for obtaining semiconductor nanostructures
MD3811G2 (en) * 2007-11-06 2009-08-31 Институт Прикладной Физики Академии Наук Молдовы Process for obtaining semiconductor nanostructural zones
MD193Z (en) * 2009-06-04 2010-11-30 Институт Прикладной Физики Академии Наук Молдовы Process for the obtaining of polysulphide film

Also Published As

Publication number Publication date
MD2536F1 (en) 2004-08-31

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Legal Events

Date Code Title Description
KA4A Patent for invention lapsed due to non-payment of fees (with right of restoration)
MM4A Patent for invention definitely lapsed due to non-payment of fees