MD2714G2 - Process for obtaining porous semiconductor structures - Google Patents

Process for obtaining porous semiconductor structures

Info

Publication number
MD2714G2
MD2714G2 MDA20040250A MD20040250A MD2714G2 MD 2714 G2 MD2714 G2 MD 2714G2 MD A20040250 A MDA20040250 A MD A20040250A MD 20040250 A MD20040250 A MD 20040250A MD 2714 G2 MD2714 G2 MD 2714G2
Authority
MD
Moldova
Prior art keywords
semiconductor structures
porous semiconductor
onto
semiconductor
obtaining
Prior art date
Application number
MDA20040250A
Other languages
Romanian (ro)
Russian (ru)
Other versions
MD2714F1 (en
Inventor
Эдуард МОНАЙКО
Ион ТИГИНЯНУ
Вячеслав УРСАКИ
Original Assignee
Ион ТИГИНЯНУ
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ион ТИГИНЯНУ filed Critical Ион ТИГИНЯНУ
Priority to MDA20040250A priority Critical patent/MD2714G2/en
Publication of MD2714F1 publication Critical patent/MD2714F1/en
Publication of MD2714G2 publication Critical patent/MD2714G2/en

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  • Drying Of Semiconductors (AREA)

Abstract

The invention relates to semiconductor production technology, in particular to the obtaining of porous semiconductor structures.The process for obtaining porous semiconductor structures consists in that onto the semiconductor surface there is applied a mask, onto the uncovered regions there are implanted high-energy ions, then the mask is removed and the semiconductor surface is subjected to the electrochemical pickling. Novelty consists in that before pickling onto the semiconductor surface there is applied a layer of photoresist material.
MDA20040250A 2004-10-19 2004-10-19 Process for obtaining porous semiconductor structures MD2714G2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
MDA20040250A MD2714G2 (en) 2004-10-19 2004-10-19 Process for obtaining porous semiconductor structures

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
MDA20040250A MD2714G2 (en) 2004-10-19 2004-10-19 Process for obtaining porous semiconductor structures

Publications (2)

Publication Number Publication Date
MD2714F1 MD2714F1 (en) 2005-02-28
MD2714G2 true MD2714G2 (en) 2005-10-31

Family

ID=34374323

Family Applications (1)

Application Number Title Priority Date Filing Date
MDA20040250A MD2714G2 (en) 2004-10-19 2004-10-19 Process for obtaining porous semiconductor structures

Country Status (1)

Country Link
MD (1) MD2714G2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MD3811G2 (en) * 2007-11-06 2009-08-31 Институт Прикладной Физики Академии Наук Молдовы Process for obtaining semiconductor nanostructural zones
MD152Z (en) * 2009-03-10 2010-09-30 Институт Прикладной Физики Академии Наук Молдовы Process for the formation of a three-dimensional microstructure
MD193Z (en) * 2009-06-04 2010-11-30 Институт Прикладной Физики Академии Наук Молдовы Process for the obtaining of polysulphide film

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6277662B1 (en) * 1999-06-03 2001-08-21 Seiichi Nagata Silicon substrate and forming method thereof
US6476409B2 (en) * 1999-04-27 2002-11-05 Canon Kabushiki Kaisha Nano-structures, process for preparing nano-structures and devices
MD2536G2 (en) * 2004-04-28 2005-03-31 Ион ТИГИНЯНУ Process for obtaining porous semiconductor structures

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6476409B2 (en) * 1999-04-27 2002-11-05 Canon Kabushiki Kaisha Nano-structures, process for preparing nano-structures and devices
US6277662B1 (en) * 1999-06-03 2001-08-21 Seiichi Nagata Silicon substrate and forming method thereof
MD2536G2 (en) * 2004-04-28 2005-03-31 Ион ТИГИНЯНУ Process for obtaining porous semiconductor structures

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MD3811G2 (en) * 2007-11-06 2009-08-31 Институт Прикладной Физики Академии Наук Молдовы Process for obtaining semiconductor nanostructural zones
MD152Z (en) * 2009-03-10 2010-09-30 Институт Прикладной Физики Академии Наук Молдовы Process for the formation of a three-dimensional microstructure
MD193Z (en) * 2009-06-04 2010-11-30 Институт Прикладной Физики Академии Наук Молдовы Process for the obtaining of polysulphide film

Also Published As

Publication number Publication date
MD2714F1 (en) 2005-02-28

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Legal Events

Date Code Title Description
KA4A Patent for invention lapsed due to non-payment of fees (with right of restoration)
MM4A Patent for invention definitely lapsed due to non-payment of fees