MD2714G2 - Procedeu de obtinere a structurilor semiconductoare poroase - Google Patents

Procedeu de obtinere a structurilor semiconductoare poroase

Info

Publication number
MD2714G2
MD2714G2 MDA20040250A MD20040250A MD2714G2 MD 2714 G2 MD2714 G2 MD 2714G2 MD A20040250 A MDA20040250 A MD A20040250A MD 20040250 A MD20040250 A MD 20040250A MD 2714 G2 MD2714 G2 MD 2714G2
Authority
MD
Moldova
Prior art keywords
semiconductor structures
porous semiconductor
onto
semiconductor
obtaining
Prior art date
Application number
MDA20040250A
Other languages
English (en)
Russian (ru)
Other versions
MD2714F1 (ro
Inventor
Эдуард МОНАЙКО
Ион ТИГИНЯНУ
Вячеслав УРСАКИ
Original Assignee
Ион ТИГИНЯНУ
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ион ТИГИНЯНУ filed Critical Ион ТИГИНЯНУ
Priority to MDA20040250A priority Critical patent/MD2714G2/ro
Publication of MD2714F1 publication Critical patent/MD2714F1/ro
Publication of MD2714G2 publication Critical patent/MD2714G2/ro

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Abstract

Invenţia se referă la tehnologia de producere a semiconductorilor, în special la procedeele de obţinere a structurilor semiconductoare poroase.Procedeul de obţinere a structurilor semiconductoare poroase constă în aceea că pe suprafaţa semiconductorului se depune o mască, pe regiunile neacoperite se implantează ioni de energie înaltă, apoi masca se înlătură, iar suprafaţa semiconductorului se supune corodării electrochimice. Noutatea constă în aceea că, înainte de corodare, pe suprafaţa semiconductorului se depune un strat din material fotorezist.
MDA20040250A 2004-10-19 2004-10-19 Procedeu de obtinere a structurilor semiconductoare poroase MD2714G2 (ro)

Priority Applications (1)

Application Number Priority Date Filing Date Title
MDA20040250A MD2714G2 (ro) 2004-10-19 2004-10-19 Procedeu de obtinere a structurilor semiconductoare poroase

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
MDA20040250A MD2714G2 (ro) 2004-10-19 2004-10-19 Procedeu de obtinere a structurilor semiconductoare poroase

Publications (2)

Publication Number Publication Date
MD2714F1 MD2714F1 (ro) 2005-02-28
MD2714G2 true MD2714G2 (ro) 2005-10-31

Family

ID=34374323

Family Applications (1)

Application Number Title Priority Date Filing Date
MDA20040250A MD2714G2 (ro) 2004-10-19 2004-10-19 Procedeu de obtinere a structurilor semiconductoare poroase

Country Status (1)

Country Link
MD (1) MD2714G2 (ro)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MD3811G2 (ro) * 2007-11-06 2009-08-31 Институт Прикладной Физики Академии Наук Молдовы Procedeu de obţinere a zonelor nanostructurale semiconductoare
MD152Z (ro) * 2009-03-10 2010-09-30 Институт Прикладной Физики Академии Наук Молдовы Procedeu de formare a unei microstructuri tridimensionale
MD193Z (ro) * 2009-06-04 2010-11-30 Институт Прикладной Физики Академии Наук Молдовы Procedeu de obţinere a peliculei polisulfidice

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6277662B1 (en) * 1999-06-03 2001-08-21 Seiichi Nagata Silicon substrate and forming method thereof
US6476409B2 (en) * 1999-04-27 2002-11-05 Canon Kabushiki Kaisha Nano-structures, process for preparing nano-structures and devices
MD2536G2 (ro) * 2004-04-28 2005-03-31 Ион ТИГИНЯНУ Procedeu de obtinere a structurilor semiconductoare poroase

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6476409B2 (en) * 1999-04-27 2002-11-05 Canon Kabushiki Kaisha Nano-structures, process for preparing nano-structures and devices
US6277662B1 (en) * 1999-06-03 2001-08-21 Seiichi Nagata Silicon substrate and forming method thereof
MD2536G2 (ro) * 2004-04-28 2005-03-31 Ион ТИГИНЯНУ Procedeu de obtinere a structurilor semiconductoare poroase

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MD3811G2 (ro) * 2007-11-06 2009-08-31 Институт Прикладной Физики Академии Наук Молдовы Procedeu de obţinere a zonelor nanostructurale semiconductoare
MD152Z (ro) * 2009-03-10 2010-09-30 Институт Прикладной Физики Академии Наук Молдовы Procedeu de formare a unei microstructuri tridimensionale
MD193Z (ro) * 2009-06-04 2010-11-30 Институт Прикладной Физики Академии Наук Молдовы Procedeu de obţinere a peliculei polisulfidice

Also Published As

Publication number Publication date
MD2714F1 (ro) 2005-02-28

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Legal Events

Date Code Title Description
KA4A Patent for invention lapsed due to non-payment of fees (with right of restoration)
MM4A Patent for invention definitely lapsed due to non-payment of fees