MD2536G2 - Procedeu de obtinere a structurilor semiconductoare poroase - Google Patents

Procedeu de obtinere a structurilor semiconductoare poroase Download PDF

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Publication number
MD2536G2
MD2536G2 MDA20040098A MD20040098A MD2536G2 MD 2536 G2 MD2536 G2 MD 2536G2 MD A20040098 A MDA20040098 A MD A20040098A MD 20040098 A MD20040098 A MD 20040098A MD 2536 G2 MD2536 G2 MD 2536G2
Authority
MD
Moldova
Prior art keywords
onto
mask
semiconductor structures
porous semiconductor
obtaining porous
Prior art date
Application number
MDA20040098A
Other languages
English (en)
Russian (ru)
Other versions
MD2536F1 (ro
Inventor
Ион ТИГИНЯНУ
Лилиан СЫРБУ
Ала КОЖОКАРУ
Вячеслав УРСАКИ
Original Assignee
Ион ТИГИНЯНУ
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ион ТИГИНЯНУ filed Critical Ион ТИГИНЯНУ
Priority to MDA20040098A priority Critical patent/MD2536G2/ro
Publication of MD2536F1 publication Critical patent/MD2536F1/ro
Publication of MD2536G2 publication Critical patent/MD2536G2/ro

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  • Weting (AREA)

Abstract

Invenţia se referă la tehnologia de producere a semiconductorilor, în special la procedeele de obţinere a structurilor semiconductoare poroase.Procedeul de obţinere a structurilor semiconductoare poroase constă în aceea că pe suprafaţa semiconductorului se depune o mască, pe regiunile neacoperite se implantează ioni de energie înaltă, apoi masca se înlătură, iar suprafaţa semiconductorului se supune corodării electrochimice. Noutatea constă în aceea că înainte de corodare pe suprafaţa semiconductorului repetat se depune o mască numai pe regiunile care au fost implantate cu ioni, pe regiunile neacoperite se implantează ioni de energie înaltă diferită de cea anterioară şi se înlătură masca.
MDA20040098A 2004-04-28 2004-04-28 Procedeu de obtinere a structurilor semiconductoare poroase MD2536G2 (ro)

Priority Applications (1)

Application Number Priority Date Filing Date Title
MDA20040098A MD2536G2 (ro) 2004-04-28 2004-04-28 Procedeu de obtinere a structurilor semiconductoare poroase

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
MDA20040098A MD2536G2 (ro) 2004-04-28 2004-04-28 Procedeu de obtinere a structurilor semiconductoare poroase

Publications (2)

Publication Number Publication Date
MD2536F1 MD2536F1 (ro) 2004-08-31
MD2536G2 true MD2536G2 (ro) 2005-03-31

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MDA20040098A MD2536G2 (ro) 2004-04-28 2004-04-28 Procedeu de obtinere a structurilor semiconductoare poroase

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MD2714G2 (ro) * 2004-10-19 2005-10-31 Ион ТИГИНЯНУ Procedeu de obtinere a structurilor semiconductoare poroase
MD2982G2 (ro) * 2005-08-10 2006-10-31 Институт Прикладной Физики Академии Наук Молдовы Procedeu de obţinere a nanostructurilor semiconductoare
MD3811G2 (ro) * 2007-11-06 2009-08-31 Институт Прикладной Физики Академии Наук Молдовы Procedeu de obţinere a zonelor nanostructurale semiconductoare
MD193Z (ro) * 2009-06-04 2010-11-30 Институт Прикладной Физики Академии Наук Молдовы Procedeu de obţinere a peliculei polisulfidice

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6518601B2 (en) * 2000-11-14 2003-02-11 Osram Opto Semiconductors Gmbh & Co. Ohg Light-emitting diode

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6518601B2 (en) * 2000-11-14 2003-02-11 Osram Opto Semiconductors Gmbh & Co. Ohg Light-emitting diode

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MD2714G2 (ro) * 2004-10-19 2005-10-31 Ион ТИГИНЯНУ Procedeu de obtinere a structurilor semiconductoare poroase
MD2982G2 (ro) * 2005-08-10 2006-10-31 Институт Прикладной Физики Академии Наук Молдовы Procedeu de obţinere a nanostructurilor semiconductoare
MD3811G2 (ro) * 2007-11-06 2009-08-31 Институт Прикладной Физики Академии Наук Молдовы Procedeu de obţinere a zonelor nanostructurale semiconductoare
MD193Z (ro) * 2009-06-04 2010-11-30 Институт Прикладной Физики Академии Наук Молдовы Procedeu de obţinere a peliculei polisulfidice

Also Published As

Publication number Publication date
MD2536F1 (ro) 2004-08-31

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KA4A Patent for invention lapsed due to non-payment of fees (with right of restoration)
MM4A Patent for invention definitely lapsed due to non-payment of fees