MD2982G2 - Procedeu de obţinere a nanostructurilor semiconductoare - Google Patents

Procedeu de obţinere a nanostructurilor semiconductoare

Info

Publication number
MD2982G2
MD2982G2 MDA20050231A MD20050231A MD2982G2 MD 2982 G2 MD2982 G2 MD 2982G2 MD A20050231 A MDA20050231 A MD A20050231A MD 20050231 A MD20050231 A MD 20050231A MD 2982 G2 MD2982 G2 MD 2982G2
Authority
MD
Moldova
Prior art keywords
semiconductor nanostructures
obtaining semiconductor
obtaining
semiconductor
nanostructures
Prior art date
Application number
MDA20050231A
Other languages
English (en)
Russian (ru)
Other versions
MD2982F1 (ro
Inventor
Ион ТИГИНЯНУ
Лилиан СЫРБУ
Вячеслав УРСАКИ
Серджиу АЛБУ
Original Assignee
Институт Прикладной Физики Академии Наук Молдовы
Технический университет Молдовы
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Институт Прикладной Физики Академии Наук Молдовы, Технический университет Молдовы filed Critical Институт Прикладной Физики Академии Наук Молдовы
Priority to MDA20050231A priority Critical patent/MD2982G2/ro
Publication of MD2982F1 publication Critical patent/MD2982F1/ro
Publication of MD2982G2 publication Critical patent/MD2982G2/ro

Links

Landscapes

  • Cleaning And De-Greasing Of Metallic Materials By Chemical Methods (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

Invenţia se referă la tehnologia semiconductorilor, în particular la procedee de obţinere a nanostructurilor semiconductoare.Procedeul de obţinere a nanostructurilor semiconductoare constă în decaparea electrochimică a suprafeţelor semiconductoare. Noutatea invenţiei constă în aceea că decaparea electrochimică se efectuează cu aplicarea impulsurilor de tensiune într-o soluţie cu următorul raport al componentelor:
MDA20050231A 2005-08-10 2005-08-10 Procedeu de obţinere a nanostructurilor semiconductoare MD2982G2 (ro)

Priority Applications (1)

Application Number Priority Date Filing Date Title
MDA20050231A MD2982G2 (ro) 2005-08-10 2005-08-10 Procedeu de obţinere a nanostructurilor semiconductoare

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
MDA20050231A MD2982G2 (ro) 2005-08-10 2005-08-10 Procedeu de obţinere a nanostructurilor semiconductoare

Publications (2)

Publication Number Publication Date
MD2982F1 MD2982F1 (ro) 2006-02-28
MD2982G2 true MD2982G2 (ro) 2006-10-31

Family

ID=36002227

Family Applications (1)

Application Number Title Priority Date Filing Date
MDA20050231A MD2982G2 (ro) 2005-08-10 2005-08-10 Procedeu de obţinere a nanostructurilor semiconductoare

Country Status (1)

Country Link
MD (1) MD2982G2 (ro)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MD3811G2 (ro) * 2007-11-06 2009-08-31 Институт Прикладной Физики Академии Наук Молдовы Procedeu de obţinere a zonelor nanostructurale semiconductoare
MD193Z (ro) * 2009-06-04 2010-11-30 Институт Прикладной Физики Академии Наук Молдовы Procedeu de obţinere a peliculei polisulfidice
MD241Z (ro) * 2009-12-29 2011-03-31 Институт Прикладной Физики Академии Наук Молдовы Procedeu de obţinere a nanoparticulelor de PbS stabilizate cu gelatină
MD242Z (ro) * 2010-01-26 2011-03-31 Институт Прикладной Физики Академии Наук Молдовы Procedeu de obţinere a nanocristalelor hidrofile PbS

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6277662B1 (en) * 1999-06-03 2001-08-21 Seiichi Nagata Silicon substrate and forming method thereof
MD2536G2 (ro) * 2004-04-28 2005-03-31 Ион ТИГИНЯНУ Procedeu de obtinere a structurilor semiconductoare poroase
MD2585G2 (ro) * 2004-06-01 2005-05-31 Ион ТИГИНЯНУ Procedeu de obţinere a nanostructurilor semiconductoare
MD2610G2 (ro) * 2004-04-28 2005-06-30 Ион ТИГИНЯНУ Procedeu de obţinere a suprafeţei poroase a semiconductorului

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6277662B1 (en) * 1999-06-03 2001-08-21 Seiichi Nagata Silicon substrate and forming method thereof
MD2536G2 (ro) * 2004-04-28 2005-03-31 Ион ТИГИНЯНУ Procedeu de obtinere a structurilor semiconductoare poroase
MD2610G2 (ro) * 2004-04-28 2005-06-30 Ион ТИГИНЯНУ Procedeu de obţinere a suprafeţei poroase a semiconductorului
MD2585G2 (ro) * 2004-06-01 2005-05-31 Ион ТИГИНЯНУ Procedeu de obţinere a nanostructurilor semiconductoare

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MD3811G2 (ro) * 2007-11-06 2009-08-31 Институт Прикладной Физики Академии Наук Молдовы Procedeu de obţinere a zonelor nanostructurale semiconductoare
MD193Z (ro) * 2009-06-04 2010-11-30 Институт Прикладной Физики Академии Наук Молдовы Procedeu de obţinere a peliculei polisulfidice
MD241Z (ro) * 2009-12-29 2011-03-31 Институт Прикладной Физики Академии Наук Молдовы Procedeu de obţinere a nanoparticulelor de PbS stabilizate cu gelatină
MD242Z (ro) * 2010-01-26 2011-03-31 Институт Прикладной Физики Академии Наук Молдовы Procedeu de obţinere a nanocristalelor hidrofile PbS

Also Published As

Publication number Publication date
MD2982F1 (ro) 2006-02-28

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Legal Events

Date Code Title Description
FG4A Patent for invention issued
KA4A Patent for invention lapsed due to non-payment of fees (with right of restoration)
MM4A Patent for invention definitely lapsed due to non-payment of fees