MD2610G2 - Process semiconductor porous surface obtaining - Google Patents
Process semiconductor porous surface obtainingInfo
- Publication number
- MD2610G2 MD2610G2 MDA20040097A MD20040097A MD2610G2 MD 2610 G2 MD2610 G2 MD 2610G2 MD A20040097 A MDA20040097 A MD A20040097A MD 20040097 A MD20040097 A MD 20040097A MD 2610 G2 MD2610 G2 MD 2610G2
- Authority
- MD
- Moldova
- Prior art keywords
- porous surface
- semiconductor porous
- process semiconductor
- surface obtaining
- mask
- Prior art date
Links
Landscapes
- Materials For Photolithography (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Abstract
The invention relates to the semiconductor technology, in particular to process es for obtaining porous surfaces of the semiconductors.Summary of the invention consists in that onto the semiconductor surface it is deposited a mask, selectively covering it, and it is carried out the electrochemical pickling. Novelty of the invention consists in that the mask is made of photoresist.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
MDA20040097A MD2610G2 (en) | 2004-04-28 | 2004-04-28 | Process semiconductor porous surface obtaining |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
MDA20040097A MD2610G2 (en) | 2004-04-28 | 2004-04-28 | Process semiconductor porous surface obtaining |
Publications (2)
Publication Number | Publication Date |
---|---|
MD2610F1 MD2610F1 (en) | 2004-11-30 |
MD2610G2 true MD2610G2 (en) | 2005-06-30 |
Family
ID=34132349
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
MDA20040097A MD2610G2 (en) | 2004-04-28 | 2004-04-28 | Process semiconductor porous surface obtaining |
Country Status (1)
Country | Link |
---|---|
MD (1) | MD2610G2 (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
MD2982G2 (en) * | 2005-08-10 | 2006-10-31 | Институт Прикладной Физики Академии Наук Молдовы | Process for obtaining semiconductor nanostructures |
MD3811G2 (en) * | 2007-11-06 | 2009-08-31 | Институт Прикладной Физики Академии Наук Молдовы | Process for obtaining semiconductor nanostructural zones |
MD193Z (en) * | 2009-06-04 | 2010-11-30 | Институт Прикладной Физики Академии Наук Молдовы | Process for the obtaining of polysulphide film |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA2254275A1 (en) * | 1998-11-20 | 2000-05-20 | Patrik Schmuki | Selective electrochemical process for creating semiconductor nano- and micro-patterns |
-
2004
- 2004-04-28 MD MDA20040097A patent/MD2610G2/en not_active IP Right Cessation
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA2254275A1 (en) * | 1998-11-20 | 2000-05-20 | Patrik Schmuki | Selective electrochemical process for creating semiconductor nano- and micro-patterns |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
MD2982G2 (en) * | 2005-08-10 | 2006-10-31 | Институт Прикладной Физики Академии Наук Молдовы | Process for obtaining semiconductor nanostructures |
MD3811G2 (en) * | 2007-11-06 | 2009-08-31 | Институт Прикладной Физики Академии Наук Молдовы | Process for obtaining semiconductor nanostructural zones |
MD193Z (en) * | 2009-06-04 | 2010-11-30 | Институт Прикладной Физики Академии Наук Молдовы | Process for the obtaining of polysulphide film |
Also Published As
Publication number | Publication date |
---|---|
MD2610F1 (en) | 2004-11-30 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
KA4A | Patent for invention lapsed due to non-payment of fees (with right of restoration) | ||
MM4A | Patent for invention definitely lapsed due to non-payment of fees |