MD2536F1 - Process for obtaining porous semiconductor structures - Google Patents
Process for obtaining porous semiconductor structuresInfo
- Publication number
- MD2536F1 MD2536F1 MD20040098A MD20040098A MD2536F1 MD 2536 F1 MD2536 F1 MD 2536F1 MD 20040098 A MD20040098 A MD 20040098A MD 20040098 A MD20040098 A MD 20040098A MD 2536 F1 MD2536 F1 MD 2536F1
- Authority
- MD
- Moldova
- Prior art keywords
- onto
- mask
- semiconductor structures
- porous semiconductor
- obtaining porous
- Prior art date
Links
Landscapes
- Drying Of Semiconductors (AREA)
- Weting (AREA)
Abstract
The invention relates to the semiconductor production technology, in particular to processes for obtaining porous semiconductor structures. The process for obtaining porous semiconductor structures consists in that onto the semiconductor's surface it is deposited a mask, onto the uncovered regions there are implanted high-energy ions, then the mask is removed, and the semiconductor surface is subjected to the electrochemical pickling. Novelty consists in that prior to pickling there is repeatedly deposited a mask mainly onto the regions which have been implanted with ions, onto the uncovered regions there are implanted ions of high-energy different from the previous one and it is removed the mask. Claims: 1
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
MDA20040098A MD2536G2 (en) | 2004-04-28 | 2004-04-28 | Process for obtaining porous semiconductor structures |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
MDA20040098A MD2536G2 (en) | 2004-04-28 | 2004-04-28 | Process for obtaining porous semiconductor structures |
Publications (2)
Publication Number | Publication Date |
---|---|
MD2536F1 true MD2536F1 (en) | 2004-08-31 |
MD2536G2 MD2536G2 (en) | 2005-03-31 |
Family
ID=32906668
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
MDA20040098A MD2536G2 (en) | 2004-04-28 | 2004-04-28 | Process for obtaining porous semiconductor structures |
Country Status (1)
Country | Link |
---|---|
MD (1) | MD2536G2 (en) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
MD2714G2 (en) * | 2004-10-19 | 2005-10-31 | Ион ТИГИНЯНУ | Process for obtaining porous semiconductor structures |
MD2982G2 (en) * | 2005-08-10 | 2006-10-31 | Институт Прикладной Физики Академии Наук Молдовы | Process for obtaining semiconductor nanostructures |
MD3811G2 (en) * | 2007-11-06 | 2009-08-31 | Институт Прикладной Физики Академии Наук Молдовы | Process for obtaining semiconductor nanostructural zones |
MD193Z (en) * | 2009-06-04 | 2010-11-30 | Институт Прикладной Физики Академии Наук Молдовы | Process for the obtaining of polysulphide film |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10056292A1 (en) * | 2000-11-14 | 2002-09-19 | Osram Opto Semiconductors Gmbh | emitting diode |
-
2004
- 2004-04-28 MD MDA20040098A patent/MD2536G2/en not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
MD2536G2 (en) | 2005-03-31 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
KA4A | Patent for invention lapsed due to non-payment of fees (with right of restoration) | ||
MM4A | Patent for invention definitely lapsed due to non-payment of fees |