MD975C2 - Process for obtaining thin films on the basis of arsenous glassy sulphide - Google Patents
Process for obtaining thin films on the basis of arsenous glassy sulphideInfo
- Publication number
- MD975C2 MD975C2 MD97-0329A MD970329A MD975C2 MD 975 C2 MD975 C2 MD 975C2 MD 970329 A MD970329 A MD 970329A MD 975 C2 MD975 C2 MD 975C2
- Authority
- MD
- Moldova
- Prior art keywords
- arsenous
- sulphide
- glassy
- basis
- thin films
- Prior art date
Links
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 title 1
- 239000010409 thin film Substances 0.000 title 1
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 abstract 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 230000003287 optical effect Effects 0.000 abstract 1
- 229910052763 palladium Inorganic materials 0.000 abstract 1
- 239000007858 starting material Substances 0.000 abstract 1
- 238000007738 vacuum evaporation Methods 0.000 abstract 1
Landscapes
- Physical Vapour Deposition (AREA)
- Heat Sensitive Colour Forming Recording (AREA)
Abstract
The invention relates to the optical information effective recording.The summary for the invention consists in the thermal vacuum evaporation of the starting compozition material, which is produced in presence of chloride palladium premixed in the fine dispersed state with the starting material in the molar ratio of 1:0,01 to 1:0,02 at the evapo-rator's temperature of 200 ± 5°C.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| MD97-0329A MD975C2 (en) | 1997-12-18 | 1997-12-18 | Process for obtaining thin films on the basis of arsenous glassy sulphide |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| MD97-0329A MD975C2 (en) | 1997-12-18 | 1997-12-18 | Process for obtaining thin films on the basis of arsenous glassy sulphide |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| MD975C2 true MD975C2 (en) | 1998-10-31 |
Family
ID=62142670
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| MD97-0329A MD975C2 (en) | 1997-12-18 | 1997-12-18 | Process for obtaining thin films on the basis of arsenous glassy sulphide |
Country Status (1)
| Country | Link |
|---|---|
| MD (1) | MD975C2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| MD3737G2 (en) * | 2007-03-26 | 2009-05-31 | Институт Прикладной Физики Академии Наук Молдовы | Bilateral solar cell and process for manufacture thereof |
| MD193Z (en) * | 2009-06-04 | 2010-11-30 | Институт Прикладной Физики Академии Наук Молдовы | Process for the obtaining of polysulphide film |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| SU704396A1 (en) * | 1978-08-24 | 1982-03-15 | Ордена Ленина физико-технический институт им.А.Ф.Иоффе | Method for making semiconductor films on the basis |
-
1997
- 1997-12-18 MD MD97-0329A patent/MD975C2/en unknown
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| SU704396A1 (en) * | 1978-08-24 | 1982-03-15 | Ордена Ленина физико-технический институт им.А.Ф.Иоффе | Method for making semiconductor films on the basis |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| MD3737G2 (en) * | 2007-03-26 | 2009-05-31 | Институт Прикладной Физики Академии Наук Молдовы | Bilateral solar cell and process for manufacture thereof |
| MD193Z (en) * | 2009-06-04 | 2010-11-30 | Институт Прикладной Физики Академии Наук Молдовы | Process for the obtaining of polysulphide film |
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