MD2245G2 - Process for obtaining thin layers of oxidic semiconductors - Google Patents
Process for obtaining thin layers of oxidic semiconductorsInfo
- Publication number
- MD2245G2 MD2245G2 MDA20030019A MD20030019A MD2245G2 MD 2245 G2 MD2245 G2 MD 2245G2 MD A20030019 A MDA20030019 A MD A20030019A MD 20030019 A MD20030019 A MD 20030019A MD 2245 G2 MD2245 G2 MD 2245G2
- Authority
- MD
- Moldova
- Prior art keywords
- thin layers
- obtaining
- onto
- semiconductor
- pulverization
- Prior art date
Links
Abstract
The invention relates to the field of semiconductor physics and may be used for obtaining of thin semiconductor layers, in particular of thin layers of oxide semiconductors.Summary of the invention consists in that the process includes the preliminary obtaining by hydrolytic way of the aqueous suspension of semiconductor oxide and pulverization thereof onto the heated substrate. The pulverization is carried out inside the electric furnace, using oxygen in the capacity of disperse gas, the deposition of the suspension being realized onto the substrate, placed onto a rotary support, with the simultaneous air removal outside the furnace.The result of the invention consists in obtaining uniform in thickness thin layers with identical electric and optical parameters along the whole surface.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| MDA20030019A MD2245G2 (en) | 2003-01-21 | 2003-01-21 | Process for obtaining thin layers of oxidic semiconductors |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| MDA20030019A MD2245G2 (en) | 2003-01-21 | 2003-01-21 | Process for obtaining thin layers of oxidic semiconductors |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| MD2245F1 MD2245F1 (en) | 2003-08-31 |
| MD2245G2 true MD2245G2 (en) | 2004-02-29 |
Family
ID=29268035
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| MDA20030019A MD2245G2 (en) | 2003-01-21 | 2003-01-21 | Process for obtaining thin layers of oxidic semiconductors |
Country Status (1)
| Country | Link |
|---|---|
| MD (1) | MD2245G2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| MD193Z (en) * | 2009-06-04 | 2010-11-30 | Институт Прикладной Физики Академии Наук Молдовы | Process for the obtaining of polysulphide film |
-
2003
- 2003-01-21 MD MDA20030019A patent/MD2245G2/en not_active IP Right Cessation
Non-Patent Citations (3)
| Title |
|---|
| S.M. Rossnagel. Depozition and redeposition in magnetrons. J. Vac. Sci. Tehcnology, A 6, 1988, p.3055 * |
| W. Badawy, F. Decker, K. Doblhofer. Preparation and properties of Si/SnO2 heterojunctions. Solar Energy Materials, 8, 1983, p. 363-369 * |
| W. Badawy, F. Decker, K. Doblhofer. Preparation and properties of Si/SnO2 heterojunctions. Solar Energy Materials, 8, 1983, p. 363-369. * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| MD193Z (en) * | 2009-06-04 | 2010-11-30 | Институт Прикладной Физики Академии Наук Молдовы | Process for the obtaining of polysulphide film |
Also Published As
| Publication number | Publication date |
|---|---|
| MD2245F1 (en) | 2003-08-31 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI356101B (en) | ||
| TW200830942A (en) | Contamination reducing liner for inductively coupled chamber | |
| CN102978586A (en) | Film deposition apparatus and film deposition method | |
| JP2013229608A (en) | Method of depositing silicone dioxide films | |
| CN105940143B (en) | Gas for eliminating shadow frame limits device assembly | |
| CN101814428A (en) | The manufacture method of the silicon wafer that applies through extension | |
| CN1897784A (en) | Reducing electrostatic charge by roughening the susceptor | |
| TW201243982A (en) | A grounding assembly for vacuum processing apparatus | |
| TW200739725A (en) | Plasma nitriding method, method for manufacturing semiconductor device and plasma processing apparatus | |
| US20030080333A1 (en) | Method for cleaning a ceramic member for use in a system for producing semiconductors, a cleaning agent and a combination of cleaning agents | |
| WO2012057906A4 (en) | A surface treatment process performed on a transparent conductive oxide layer for solar cell applications | |
| TW200721353A (en) | Electrostatic chuck, thin film manufacturing apparatus having the same, thin film manufacturing method, and substrate surface treatment method | |
| US20200075313A1 (en) | Oxide Removal From Titanium Nitride Surfaces | |
| CN105154847B (en) | A kind of nano-diamond film and its controllable method for preparing to be lighted with Si V | |
| CN102931056A (en) | Surface processing method, a member made of silicon carbide, and a plasma processing apparatus | |
| MD2245G2 (en) | Process for obtaining thin layers of oxidic semiconductors | |
| JP5105898B2 (en) | Silicon thin film deposition method | |
| CN116804270A (en) | Low-temperature deposition method and device preparation method of silicon dioxide film | |
| KR20150070977A (en) | Manufacturing method of glass laminated body and manufacturing method of electronic device | |
| JP4850762B2 (en) | Deposition method | |
| JP4138269B2 (en) | Semiconductor manufacturing equipment | |
| CN101289285A (en) | Plasma processing device | |
| TWI275139B (en) | Pre-cleaning method of substrate for semiconductor device | |
| JP4890313B2 (en) | Plasma CVD equipment | |
| CN1819113A (en) | Vacuum processing apparatus and method of using the same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| KA4A | Patent for invention lapsed due to non-payment of fees (with right of restoration) | ||
| MM4A | Patent for invention definitely lapsed due to non-payment of fees |