MD2245F1 - Process for obtaining thin layers of oxidic semiconductors - Google Patents

Process for obtaining thin layers of oxidic semiconductors

Info

Publication number
MD2245F1
MD2245F1 MD20030019A MD20030019A MD2245F1 MD 2245 F1 MD2245 F1 MD 2245F1 MD 20030019 A MD20030019 A MD 20030019A MD 20030019 A MD20030019 A MD 20030019A MD 2245 F1 MD2245 F1 MD 2245F1
Authority
MD
Moldova
Prior art keywords
thin layers
obtaining
onto
semiconductor
pulverization
Prior art date
Application number
MD20030019A
Other languages
Romanian (ro)
Other versions
MD2245G2 (en
Inventor
Alexei SIMASCHEVICI
Dormidont Serban
Andrei Coval
Iurie Cucinschi
Leonid Bruc
Vladimir Fedorov
Original Assignee
Univ De Stat Din Moldova
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ De Stat Din Moldova filed Critical Univ De Stat Din Moldova
Priority to MDA20030019A priority Critical patent/MD2245G2/en
Publication of MD2245F1 publication Critical patent/MD2245F1/en
Publication of MD2245G2 publication Critical patent/MD2245G2/en

Links

Landscapes

  • Oxygen, Ozone, And Oxides In General (AREA)

Abstract

The invention relates to the field of semiconductor physics and may be used for obtaining of thin semiconductor layers, in particular of thin layers of oxide semiconductors. Summary of the invention consists in that the process includes the preliminary obtaining by hydrolytic way of the aqueous suspension of semiconductor oxide and pulverization thereof onto the heated substrate. The pulverization is carried out inside the electric furnace, using oxygen in the capacity of disperse gas, the deposition of the suspension being realized onto the substrate, placed onto a rotary support, with the simultaneous air removal outside the furnace.The result of the invention consists in obtaining uniform in thickness thin layers with identical electric and optical parameters along the whole surface.Claims: 1Fig.: 1
MDA20030019A 2003-01-21 2003-01-21 Process for obtaining thin layers of oxidic semiconductors MD2245G2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
MDA20030019A MD2245G2 (en) 2003-01-21 2003-01-21 Process for obtaining thin layers of oxidic semiconductors

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
MDA20030019A MD2245G2 (en) 2003-01-21 2003-01-21 Process for obtaining thin layers of oxidic semiconductors

Publications (2)

Publication Number Publication Date
MD2245F1 true MD2245F1 (en) 2003-08-31
MD2245G2 MD2245G2 (en) 2004-02-29

Family

ID=29268035

Family Applications (1)

Application Number Title Priority Date Filing Date
MDA20030019A MD2245G2 (en) 2003-01-21 2003-01-21 Process for obtaining thin layers of oxidic semiconductors

Country Status (1)

Country Link
MD (1) MD2245G2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MD193Z (en) * 2009-06-04 2010-11-30 Институт Прикладной Физики Академии Наук Молдовы Process for the obtaining of polysulphide film

Also Published As

Publication number Publication date
MD2245G2 (en) 2004-02-29

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Legal Events

Date Code Title Description
KA4A Patent for invention lapsed due to non-payment of fees (with right of restoration)
MM4A Patent for invention definitely lapsed due to non-payment of fees