MD3029C2 - Process for sensor obtaining (variants) - Google Patents
Process for sensor obtaining (variants)Info
- Publication number
- MD3029C2 MD3029C2 MDA20040208A MD20040208A MD3029C2 MD 3029 C2 MD3029 C2 MD 3029C2 MD A20040208 A MDA20040208 A MD A20040208A MD 20040208 A MD20040208 A MD 20040208A MD 3029 C2 MD3029 C2 MD 3029C2
- Authority
- MD
- Moldova
- Prior art keywords
- obtained materials
- metal
- chemical components
- ultra
- variant
- Prior art date
Links
Abstract
The invention relates to the electronics, in particular to the sensor obtaining technologies, and may be used for obtaining sensors on base of metal or semiconductor oxide layers.The process for sensor obtaining, according to the first variant, includes deposition of chemical components of the metal or semiconductor oxide layers in the presence of ultra-violet rays. Then, it is carried out the rapid photothermal treatment of the obtained materials in vacuum, in the air or in the gas chamber, for example, with oxygen.The process for sensor obtaining, according to the second variant, includes deposition of chemical components of the metal or semiconductor oxide layers in the presence of ultra-violet rays. Additionally, there takes place doping of the obtained materials with at least one donor or acceptor impurity, simultaneously with the deposition of chemical components. Then, it is carried out the rapid photothermal treatment of the obtained materials in vacuum, in the air or in the gas chamber, for example, with oxygen.The process for sensor obtaining, according to the third variant, includes deposition of chemical components of the metal or semiconductor oxide layers in the presence of ultra-violet rays. Additionally, there takes place doping of the obtained materials with at least one donor or acceptor impurity, and then is carried out the rapid photothermal treatment of the obtained materials in vacuum, in the air or in the gas chamber, for example, with oxygen.The process for sensor obtaining, according to the fourth variant, includes deposition of chemical components of the metal or semiconductor oxide layers in the presence of ultra-violet rays. Then, there is additionally carried out the rapid photothermal treatment of the obtained materials in vacuum, in the air or in the gas chamber, for example, with oxygen, and simultaneously their doping with at least one donor or acceptor impurity.The process for sensor obtaining, according to the fifth variant, includes deposition of chemical components of the metal or semiconductor layers in the presence of ultra-violet rays. Additionally, there takes place doping of the obtained materials with at least one donor or acceptor impurity, the concentration of the impurities being maximum possible for the obtained material, and then it is carried out the rapid photothermal treatment of the obtained materials, which takes place in the conditions of temperature lowering from the doping temperature up to the ambient temperature in vacuum, in the air or in the gas chamber, for example, with oxygen.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
MDA20040208A MD3029C2 (en) | 2004-09-06 | 2004-09-06 | Process for sensor obtaining (variants) |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
MDA20040208A MD3029C2 (en) | 2004-09-06 | 2004-09-06 | Process for sensor obtaining (variants) |
Publications (2)
Publication Number | Publication Date |
---|---|
MD3029B1 MD3029B1 (en) | 2006-04-30 |
MD3029C2 true MD3029C2 (en) | 2006-11-30 |
Family
ID=36202584
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
MDA20040208A MD3029C2 (en) | 2004-09-06 | 2004-09-06 | Process for sensor obtaining (variants) |
Country Status (1)
Country | Link |
---|---|
MD (1) | MD3029C2 (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
MD20080058A (en) * | 2008-02-25 | 2009-08-31 | Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы | Device for obtaining superconducting layers |
MD175Z (en) * | 2008-02-25 | 2010-10-31 | Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы | Device for the obtaining of superconducting films |
MD353Z (en) * | 2010-02-24 | 2011-10-31 | Институт Электронной Инженерии И Промышленных Технологий | Superconductor spin valve |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA2777687A1 (en) * | 2009-10-15 | 2011-04-21 | Arkema Inc. | Deposition of doped zno films on polymer substrates by uv-assisted chemical vapor deposition |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4574264A (en) * | 1982-11-17 | 1986-03-04 | Kabushiki Kaisha Toyota Chuo Kenkyusho | Thin film oxygen sensor with microheater |
US5271821A (en) * | 1988-03-03 | 1993-12-21 | Ngk Insulators, Ltd. | Oxygen sensor and method of producing the same |
US6294374B1 (en) * | 1999-10-08 | 2001-09-25 | The Scripps Research Institute | Use of catalytic antibodies for synthesizing epothilone |
-
2004
- 2004-09-06 MD MDA20040208A patent/MD3029C2/en not_active IP Right Cessation
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4574264A (en) * | 1982-11-17 | 1986-03-04 | Kabushiki Kaisha Toyota Chuo Kenkyusho | Thin film oxygen sensor with microheater |
US5271821A (en) * | 1988-03-03 | 1993-12-21 | Ngk Insulators, Ltd. | Oxygen sensor and method of producing the same |
US6294374B1 (en) * | 1999-10-08 | 2001-09-25 | The Scripps Research Institute | Use of catalytic antibodies for synthesizing epothilone |
Non-Patent Citations (3)
Title |
---|
Arijit Chowdhury et al. Fast response characteristics with ultra-thin CuO islands on sputtered SnO2, Sensors and Actuators, B93, 2003, p. 572-579 * |
S. Leopold, I.U. Schuchrt et al. Electrochemical depozition of cilindrical Cu/Cu2O microstructures, Electrochemica Arta, 47, 2002, p. 4393 – 4397 * |
Won Jae Moon et al. The CO and H2 gas selectivity of CuO-doped SnO2-ZnO compoyite gas sensor, Sensors and Actuators, B 87, 2002, p. 464-470 * |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
MD20080058A (en) * | 2008-02-25 | 2009-08-31 | Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы | Device for obtaining superconducting layers |
MD175Z (en) * | 2008-02-25 | 2010-10-31 | Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы | Device for the obtaining of superconducting films |
MD353Z (en) * | 2010-02-24 | 2011-10-31 | Институт Электронной Инженерии И Промышленных Технологий | Superconductor spin valve |
Also Published As
Publication number | Publication date |
---|---|
MD3029B1 (en) | 2006-04-30 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
FG4A | Patent for invention issued | ||
KA4A | Patent for invention lapsed due to non-payment of fees (with right of restoration) | ||
KA4A | Patent for invention lapsed due to non-payment of fees (with right of restoration) | ||
MM4A | Patent for invention definitely lapsed due to non-payment of fees |