MD3029C2 - Process for sensor obtaining (variants) - Google Patents

Process for sensor obtaining (variants) Download PDF

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Publication number
MD3029C2
MD3029C2 MDA20040208A MD20040208A MD3029C2 MD 3029 C2 MD3029 C2 MD 3029C2 MD A20040208 A MDA20040208 A MD A20040208A MD 20040208 A MD20040208 A MD 20040208A MD 3029 C2 MD3029 C2 MD 3029C2
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MD
Moldova
Prior art keywords
obtained materials
metal
chemical components
ultra
variant
Prior art date
Application number
MDA20040208A
Other languages
Romanian (ro)
Russian (ru)
Other versions
MD3029B1 (en
Inventor
Сержиу ШИШЯНУ
Теодор ШИШЯНУ
Олег ЛУПАН
Original Assignee
ШИШЯНУ Серджиу
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ШИШЯНУ Серджиу filed Critical ШИШЯНУ Серджиу
Priority to MDA20040208A priority Critical patent/MD3029C2/en
Publication of MD3029B1 publication Critical patent/MD3029B1/en
Publication of MD3029C2 publication Critical patent/MD3029C2/en

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  • Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)

Abstract

The invention relates to the electronics, in particular to the sensor obtaining technologies, and may be used for obtaining sensors on base of metal or semiconductor oxide layers.The process for sensor obtaining, according to the first variant, includes deposition of chemical components of the metal or semiconductor oxide layers in the presence of ultra-violet rays. Then, it is carried out the rapid photothermal treatment of the obtained materials in vacuum, in the air or in the gas chamber, for example, with oxygen.The process for sensor obtaining, according to the second variant, includes deposition of chemical components of the metal or semiconductor oxide layers in the presence of ultra-violet rays. Additionally, there takes place doping of the obtained materials with at least one donor or acceptor impurity, simultaneously with the deposition of chemical components. Then, it is carried out the rapid photothermal treatment of the obtained materials in vacuum, in the air or in the gas chamber, for example, with oxygen.The process for sensor obtaining, according to the third variant, includes deposition of chemical components of the metal or semiconductor oxide layers in the presence of ultra-violet rays. Additionally, there takes place doping of the obtained materials with at least one donor or acceptor impurity, and then is carried out the rapid photothermal treatment of the obtained materials in vacuum, in the air or in the gas chamber, for example, with oxygen.The process for sensor obtaining, according to the fourth variant, includes deposition of chemical components of the metal or semiconductor oxide layers in the presence of ultra-violet rays. Then, there is additionally carried out the rapid photothermal treatment of the obtained materials in vacuum, in the air or in the gas chamber, for example, with oxygen, and simultaneously their doping with at least one donor or acceptor impurity.The process for sensor obtaining, according to the fifth variant, includes deposition of chemical components of the metal or semiconductor layers in the presence of ultra-violet rays. Additionally, there takes place doping of the obtained materials with at least one donor or acceptor impurity, the concentration of the impurities being maximum possible for the obtained material, and then it is carried out the rapid photothermal treatment of the obtained materials, which takes place in the conditions of temperature lowering from the doping temperature up to the ambient temperature in vacuum, in the air or in the gas chamber, for example, with oxygen.
MDA20040208A 2004-09-06 2004-09-06 Process for sensor obtaining (variants) MD3029C2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
MDA20040208A MD3029C2 (en) 2004-09-06 2004-09-06 Process for sensor obtaining (variants)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
MDA20040208A MD3029C2 (en) 2004-09-06 2004-09-06 Process for sensor obtaining (variants)

Publications (2)

Publication Number Publication Date
MD3029B1 MD3029B1 (en) 2006-04-30
MD3029C2 true MD3029C2 (en) 2006-11-30

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MDA20040208A MD3029C2 (en) 2004-09-06 2004-09-06 Process for sensor obtaining (variants)

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MD (1) MD3029C2 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MD20080058A (en) * 2008-02-25 2009-08-31 Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы Device for obtaining superconducting layers
MD175Z (en) * 2008-02-25 2010-10-31 Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы Device for the obtaining of superconducting films
MD353Z (en) * 2010-02-24 2011-10-31 Институт Электронной Инженерии И Промышленных Технологий Superconductor spin valve
RU2542977C2 (en) * 2009-10-15 2015-02-27 Аркема Инк. DEPOSITING DOPED ZnO FILMS ON POLYMER SUBSTRATES BY CHEMICAL VAPOUR DEPOSITION UNDER UV ACTION

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4574264A (en) * 1982-11-17 1986-03-04 Kabushiki Kaisha Toyota Chuo Kenkyusho Thin film oxygen sensor with microheater
US5271821A (en) * 1988-03-03 1993-12-21 Ngk Insulators, Ltd. Oxygen sensor and method of producing the same
US6294374B1 (en) * 1999-10-08 2001-09-25 The Scripps Research Institute Use of catalytic antibodies for synthesizing epothilone

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4574264A (en) * 1982-11-17 1986-03-04 Kabushiki Kaisha Toyota Chuo Kenkyusho Thin film oxygen sensor with microheater
US5271821A (en) * 1988-03-03 1993-12-21 Ngk Insulators, Ltd. Oxygen sensor and method of producing the same
US6294374B1 (en) * 1999-10-08 2001-09-25 The Scripps Research Institute Use of catalytic antibodies for synthesizing epothilone

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
Arijit Chowdhury et al. Fast response characteristics with ultra-thin CuO islands on sputtered SnO2, Sensors and Actuators, B93, 2003, p. 572-579 *
S. Leopold, I.U. Schuchrt et al. Electrochemical depozition of cilindrical Cu/Cu2O microstructures, Electrochemica Arta, 47, 2002, p. 4393 – 4397 *
Won Jae Moon et al. The CO and H2 gas selectivity of CuO-doped SnO2-ZnO compoyite gas sensor, Sensors and Actuators, B 87, 2002, p. 464-470 *

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MD20080058A (en) * 2008-02-25 2009-08-31 Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы Device for obtaining superconducting layers
MD175Z (en) * 2008-02-25 2010-10-31 Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы Device for the obtaining of superconducting films
RU2542977C2 (en) * 2009-10-15 2015-02-27 Аркема Инк. DEPOSITING DOPED ZnO FILMS ON POLYMER SUBSTRATES BY CHEMICAL VAPOUR DEPOSITION UNDER UV ACTION
MD353Z (en) * 2010-02-24 2011-10-31 Институт Электронной Инженерии И Промышленных Технологий Superconductor spin valve

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Publication number Publication date
MD3029B1 (en) 2006-04-30

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