TW200605101A - Thermistor thin-film and its forming method - Google Patents
Thermistor thin-film and its forming methodInfo
- Publication number
- TW200605101A TW200605101A TW094120307A TW94120307A TW200605101A TW 200605101 A TW200605101 A TW 200605101A TW 094120307 A TW094120307 A TW 094120307A TW 94120307 A TW94120307 A TW 94120307A TW 200605101 A TW200605101 A TW 200605101A
- Authority
- TW
- Taiwan
- Prior art keywords
- film
- mn3o4
- co3o4
- thermistor thin
- metal oxide
- Prior art date
Links
- 239000010409 thin film Substances 0.000 title abstract 5
- 238000000034 method Methods 0.000 title abstract 3
- 239000010408 film Substances 0.000 abstract 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- UBEWDCMIDFGDOO-UHFFFAOYSA-N cobalt(II,III) oxide Inorganic materials [O-2].[O-2].[O-2].[O-2].[Co+2].[Co+3].[Co+3] UBEWDCMIDFGDOO-UHFFFAOYSA-N 0.000 abstract 2
- 239000002131 composite material Substances 0.000 abstract 2
- 239000013078 crystal Substances 0.000 abstract 2
- 238000001514 detection method Methods 0.000 abstract 2
- 238000010438 heat treatment Methods 0.000 abstract 2
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 abstract 2
- 229910044991 metal oxide Inorganic materials 0.000 abstract 2
- 150000004706 metal oxides Chemical class 0.000 abstract 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 1
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 230000007547 defect Effects 0.000 abstract 1
- 229910052757 nitrogen Inorganic materials 0.000 abstract 1
- 239000001301 oxygen Substances 0.000 abstract 1
- 229910052760 oxygen Inorganic materials 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 238000004544 sputter deposition Methods 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910000314 transition metal oxide Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/06—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
- H01C17/065—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thick film techniques, e.g. serigraphy
- H01C17/06506—Precursor compositions therefor, e.g. pastes, inks, glass frits
- H01C17/06513—Precursor compositions therefor, e.g. pastes, inks, glass frits characterised by the resistive component
- H01C17/06533—Precursor compositions therefor, e.g. pastes, inks, glass frits characterised by the resistive component composed of oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/04—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/008—Thermistors
-
- H01L31/02966—
-
- H01L31/09—
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Manufacturing & Machinery (AREA)
- Thermistors And Varistors (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Abstract
This invention provides a forming method of a thermistor thin-film. It suppresses the generation of self-heating, and is exempted from mechanical defects, such as deformation and crack for relevant thermistor thin-film. Further, it provides an excellent mechanical strength and film uniformity for thermistor film. Furthermore, it can form the high-precision patterns. Moreover, it possesses the necessarily electric properties required for infrared detection sensors. Therefore, it is suitable for an infrared detection sensor utilized of a film of transition metal oxide. Such a thermistor thin-film comprises crystals whose 90% or more are occupied by crystal grains of 0.05 to 0.2 μm with aspect ratio larger than 0.5, but less than 2. It is composed of an Mn3O4-Co3O4 or Mn3O4-Co3O4-Fe2O3 composite metal oxide. Such a thermistor thin-film can be formed by a process providing by sputtering coating a 0.05 to 0.2 μm thick film of Mn3O4-Co3O4 or Mn3O4-Co3O4-Fe2O3 composite metal oxide on a foundation layer of SiO2 and subjecting the resultant film to heat treatment at 550 DEG C to 650 DEG C in an environment of atmospheric air or atmosphere of nitrogen and oxygen mixed together.
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004181301 | 2004-06-18 | ||
| JP2005041298 | 2005-02-17 | ||
| JP2005144921A JP2006032910A (en) | 2004-06-18 | 2005-05-18 | Thermistor thin film and its forming method |
| JP2005147142A JP2006324520A (en) | 2005-05-19 | 2005-05-19 | Thermistor thin film and its manufacturing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200605101A true TW200605101A (en) | 2006-02-01 |
| TWI371762B TWI371762B (en) | 2012-09-01 |
Family
ID=35782603
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW094120307A TW200605101A (en) | 2004-06-18 | 2005-06-17 | Thermistor thin-film and its forming method |
Country Status (4)
| Country | Link |
|---|---|
| KR (1) | KR101121399B1 (en) |
| CN (1) | CN1969345B (en) |
| TW (1) | TW200605101A (en) |
| WO (1) | WO2006003791A1 (en) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008084991A (en) * | 2006-09-26 | 2008-04-10 | Mitsubishi Materials Corp | Thermistor thin film and thin film thermistor device |
| KR101768168B1 (en) | 2015-05-29 | 2017-08-17 | 한국세라믹기술원 | Method of forming flexible film thermistor and Temperature sensor |
| CN108168723A (en) * | 2017-12-22 | 2018-06-15 | 雷念程 | A kind of film temperature sensor chip and its manufacturing method |
| CN109484039B (en) * | 2018-12-03 | 2020-03-24 | 山东华菱电子股份有限公司 | Method for manufacturing heating substrate for thermal printing head |
| WO2020137681A1 (en) * | 2018-12-28 | 2020-07-02 | 株式会社村田製作所 | Composite, and structure and thermistor using same |
| JP7134920B2 (en) * | 2019-06-17 | 2022-09-12 | 日立Astemo株式会社 | Thermal sensor device |
| CN112366052A (en) * | 2020-11-09 | 2021-02-12 | 肇庆市金龙宝电子有限公司 | High-precision thermistor chip for medical body temperature measurement and preparation method thereof |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60208803A (en) | 1984-04-02 | 1985-10-21 | 株式会社日立製作所 | Method of producing thin film thermistor |
| JPH08306508A (en) * | 1995-05-08 | 1996-11-22 | Nippondenso Co Ltd | Thin film thermistor element and its manufacturing method |
| CN1046049C (en) * | 1996-12-14 | 1999-10-27 | 中国科学院新疆物理研究所 | Oxidate semi-conductor thermosensitive resistance and mfg. method thereof |
| JPH10256004A (en) | 1997-03-11 | 1998-09-25 | Shibaura Denshi:Kk | Thin-film thermistor |
| JP4279399B2 (en) * | 1999-06-03 | 2009-06-17 | パナソニック株式会社 | Thin film thermistor element and method for manufacturing thin film thermistor element |
| JP2000348905A (en) * | 1999-06-03 | 2000-12-15 | Matsushita Electric Ind Co Ltd | Thin-film thermistor element and manufacture of the same |
-
2005
- 2005-06-16 WO PCT/JP2005/011021 patent/WO2006003791A1/en active Application Filing
- 2005-06-16 CN CN2005800195136A patent/CN1969345B/en not_active Expired - Fee Related
- 2005-06-16 KR KR1020067027852A patent/KR101121399B1/en active IP Right Grant
- 2005-06-17 TW TW094120307A patent/TW200605101A/en not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| KR101121399B1 (en) | 2012-03-21 |
| TWI371762B (en) | 2012-09-01 |
| CN1969345A (en) | 2007-05-23 |
| CN1969345B (en) | 2011-10-05 |
| KR20070029219A (en) | 2007-03-13 |
| WO2006003791A1 (en) | 2006-01-12 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |