MD151Z - Process for growth of GaAs epitaxial layers into a horizontal reactor - Google Patents

Process for growth of GaAs epitaxial layers into a horizontal reactor Download PDF

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Publication number
MD151Z
MD151Z MDS20090001A MDS20090001A MD151Z MD 151 Z MD151 Z MD 151Z MD S20090001 A MDS20090001 A MD S20090001A MD S20090001 A MDS20090001 A MD S20090001A MD 151 Z MD151 Z MD 151Z
Authority
MD
Moldova
Prior art keywords
epitaxial layers
growth
reactor
horizontal reactor
gaas epitaxial
Prior art date
Application number
MDS20090001A
Other languages
Romanian (ro)
Russian (ru)
Inventor
Василе БОТНАРЮК
Леонид ГОРЧАК
Симион РАЕВСКИЙ
Юрий ЖИЛЯЕВ
Леонид ФЁДОРОВ
Original Assignee
Государственный Университет Молд0
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Государственный Университет Молд0 filed Critical Государственный Университет Молд0
Priority to MDS20090001A priority Critical patent/MD151Z/en
Publication of MD151Y publication Critical patent/MD151Y/en
Publication of MD151Z publication Critical patent/MD151Z/en

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Abstract

The invention relates to processes for growth of epitaxial layers, particularly a process for growth of GaAs epitaxial layers into a horizontal reactor.The process, according to the invention, includes placement of the prepared substrate and of gallium source into a reactor, sealing of the reactor and hydrogen blowing thereof with an output of 1000 cm3/min during one hour, heating of the gallium source up to the temperature of 800°C, of the deposition zone up to 715…750°C with the maintenance of a temperature increase gradient of 1.7…2.1°C/cm and deposition of epitaxial layers at a linear velocity of the hydrogen flow with Ga-AsCl3 vapours equal to 33…35 cm/min.
MDS20090001A 2008-12-30 2008-12-30 Process for growth of GaAs epitaxial layers into a horizontal reactor MD151Z (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
MDS20090001A MD151Z (en) 2008-12-30 2008-12-30 Process for growth of GaAs epitaxial layers into a horizontal reactor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
MDS20090001A MD151Z (en) 2008-12-30 2008-12-30 Process for growth of GaAs epitaxial layers into a horizontal reactor

Publications (2)

Publication Number Publication Date
MD151Y MD151Y (en) 2010-02-26
MD151Z true MD151Z (en) 2010-09-30

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Application Number Title Priority Date Filing Date
MDS20090001A MD151Z (en) 2008-12-30 2008-12-30 Process for growth of GaAs epitaxial layers into a horizontal reactor

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MD (1) MD151Z (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MD4280C1 (en) * 2013-09-04 2014-10-31 Государственный Университет Молд0 pInP-nCdS structure growth method
MD972Z (en) * 2015-02-19 2016-06-30 Государственный Университет Молд0 Method for p+InP-p-InP-n+CdS structure growth for photovoltaic cells
MD4510C1 (en) * 2016-06-23 2018-03-31 Государственный Университет Молд0 Method for growth of n+-p-p+ InP structure for solar cells

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MD4554C1 (en) * 2017-10-18 2018-09-30 Государственный Университет Молд0 Process for increasing the efficiency of photovoltaic cells based on p+InP-p-InP-n+CdS

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1118579A (en) * 1967-04-21 1968-07-03 Standard Telephones Cables Ltd A method of and apparatus for growing an epitaxial layer of semiconductive material on a surface of a semiconductive substrate
JPS5635411A (en) * 1979-08-31 1981-04-08 Fujitsu Ltd Epitaxial wafer of gallium arsenide and its manufacture
JPH04354325A (en) * 1991-05-31 1992-12-08 Nikko Kyodo Co Ltd Epitaxial growth method for compound semiconductors
JPH04359509A (en) * 1991-06-06 1992-12-11 Sumitomo Electric Ind Ltd Epitaxial growth method of ternary compound semiconductor
JPH0684803A (en) * 1992-09-01 1994-03-25 Toshiba Corp Vapor phase epitaxial growth system
JPH06172084A (en) * 1992-12-08 1994-06-21 Sumitomo Electric Ind Ltd Method for epitaxial growth of compound semiconductor and apparatus therefor
MD499G2 (en) * 1993-12-30 1997-05-31 Государственный Университет Молд0 Process of epitaxial layer grouing AIII BV in chloride system
MD627G2 (en) * 1994-07-25 1997-06-30 Государственный Университет Молд0 The method of making epitaxy layers of phosphide indium from gaz phase
MD673G2 (en) * 1994-05-24 1997-08-31 Государственный Университет Молд0 Process for InP layers production
MD930G2 (en) * 1997-04-09 1999-01-31 Государственный Университет Молд0 Process for obtaining semiconducter layer materials from the gas phase
  • 2008

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1118579A (en) * 1967-04-21 1968-07-03 Standard Telephones Cables Ltd A method of and apparatus for growing an epitaxial layer of semiconductive material on a surface of a semiconductive substrate
JPS5635411A (en) * 1979-08-31 1981-04-08 Fujitsu Ltd Epitaxial wafer of gallium arsenide and its manufacture
JPH04354325A (en) * 1991-05-31 1992-12-08 Nikko Kyodo Co Ltd Epitaxial growth method for compound semiconductors
JPH04359509A (en) * 1991-06-06 1992-12-11 Sumitomo Electric Ind Ltd Epitaxial growth method of ternary compound semiconductor
JPH0684803A (en) * 1992-09-01 1994-03-25 Toshiba Corp Vapor phase epitaxial growth system
JPH06172084A (en) * 1992-12-08 1994-06-21 Sumitomo Electric Ind Ltd Method for epitaxial growth of compound semiconductor and apparatus therefor
MD499G2 (en) * 1993-12-30 1997-05-31 Государственный Университет Молд0 Process of epitaxial layer grouing AIII BV in chloride system
MD673G2 (en) * 1994-05-24 1997-08-31 Государственный Университет Молд0 Process for InP layers production
MD627G2 (en) * 1994-07-25 1997-06-30 Государственный Университет Молд0 The method of making epitaxy layers of phosphide indium from gaz phase
MD930G2 (en) * 1997-04-09 1999-01-31 Государственный Университет Молд0 Process for obtaining semiconducter layer materials from the gas phase

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
Dilorenzo J. V. Vapor growth of epitaxial GaAs: a summary of parameters which influence the purity and morphology of epitaxial layers. J. Crystal Growth, 1972, vol. 17, p. 189…206. *
Ботнарюк В.М. Исследование арсенидгаллиевых структур для силовых приборов полученных низкотемпературной эпитаксией в системе Ga-AsCl3-H2. Диссертация на соискание ученой степени кандидата физико-математических наук, 1986, Кишинёв, c. 93…94. *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MD4280C1 (en) * 2013-09-04 2014-10-31 Государственный Университет Молд0 pInP-nCdS structure growth method
MD972Z (en) * 2015-02-19 2016-06-30 Государственный Университет Молд0 Method for p+InP-p-InP-n+CdS structure growth for photovoltaic cells
MD4510C1 (en) * 2016-06-23 2018-03-31 Государственный Университет Молд0 Method for growth of n+-p-p+ InP structure for solar cells

Also Published As

Publication number Publication date
MD151Y (en) 2010-02-26

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KA4Y Short-term patent lapsed due to non-payment of fees (with right of restoration)