MD930G2 - Process for obtaining semiconducter layer materials from the gas phase - Google Patents

Process for obtaining semiconducter layer materials from the gas phase

Info

Publication number
MD930G2
MD930G2 MD97-0123A MD970123A MD930G2 MD 930 G2 MD930 G2 MD 930G2 MD 970123 A MD970123 A MD 970123A MD 930 G2 MD930 G2 MD 930G2
Authority
MD
Moldova
Prior art keywords
obtaining
base
prescribed
growing
gas
Prior art date
Application number
MD97-0123A
Other languages
Romanian (ro)
Russian (ru)
Inventor
Симион РАЕВСКИЙ
Original Assignee
Государственный Университет Молд0
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Государственный Университет Молд0 filed Critical Государственный Университет Молд0
Priority to MD97-0123A priority Critical patent/MD930G2/en
Publication of MD930G2 publication Critical patent/MD930G2/en

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  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

The invention relates to the semiconductor materials and apparatus technology, namely to the obtaining of semiconductor layers and gas-phase epitaxis structures.The proces for obtaining semiconductor layers materials from the gas phase is based on the vapour phase mass transfer from the source zone into the growing zone by the gas carrier flow. The mass transfer is made by the vapour contact of the source having the prescribed composition with the base at the prescribed temperature and base descreening at the expence of the reciprocate motion and base motion speed, which is selected with regard of the prescribed growing speed and growing layer thickness at the period of the base one pass.The technical result of the invention consists in obtaining semiconducter layers having a homogeneous composition and thickness.
MD97-0123A 1997-04-09 1997-04-09 Process for obtaining semiconducter layer materials from the gas phase MD930G2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
MD97-0123A MD930G2 (en) 1997-04-09 1997-04-09 Process for obtaining semiconducter layer materials from the gas phase

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
MD97-0123A MD930G2 (en) 1997-04-09 1997-04-09 Process for obtaining semiconducter layer materials from the gas phase

Publications (1)

Publication Number Publication Date
MD930G2 true MD930G2 (en) 1999-01-31

Family

ID=62142712

Family Applications (1)

Application Number Title Priority Date Filing Date
MD97-0123A MD930G2 (en) 1997-04-09 1997-04-09 Process for obtaining semiconducter layer materials from the gas phase

Country Status (1)

Country Link
MD (1) MD930G2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MD151Z (en) * 2008-12-30 2010-09-30 Государственный Университет Молд0 Process for growth of GaAs epitaxial layers into a horizontal reactor
MD176Z (en) * 2009-04-15 2010-10-31 Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы Process for the manufacture of high-voltage diode

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SU496873A1 (en) * 1974-03-15 1975-12-25 Государственный Ордена Октябрьской Революции Научно-Исследовательский И Проектный Институт Редкометаллической Промышленности (Гиредмет) The method of obtaining epitaxial layers, for example, semiconductors of solid solutions from the gas phase

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SU496873A1 (en) * 1974-03-15 1975-12-25 Государственный Ордена Октябрьской Революции Научно-Исследовательский И Проектный Институт Редкометаллической Промышленности (Гиредмет) The method of obtaining epitaxial layers, for example, semiconductors of solid solutions from the gas phase

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MD151Z (en) * 2008-12-30 2010-09-30 Государственный Университет Молд0 Process for growth of GaAs epitaxial layers into a horizontal reactor
MD176Z (en) * 2009-04-15 2010-10-31 Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы Process for the manufacture of high-voltage diode

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