MD176Z - Process for the manufacture of high-voltage diode - Google Patents
Process for the manufacture of high-voltage diode Download PDFInfo
- Publication number
- MD176Z MD176Z MDS20090054A MDS20090054A MD176Z MD 176 Z MD176 Z MD 176Z MD S20090054 A MDS20090054 A MD S20090054A MD S20090054 A MDS20090054 A MD S20090054A MD 176 Z MD176 Z MD 176Z
- Authority
- MD
- Moldova
- Prior art keywords
- manufacture
- voltage diode
- deposition
- mixture
- temperature
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 4
- 238000000034 method Methods 0.000 title abstract 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 abstract 2
- 239000002253 acid Substances 0.000 abstract 2
- 239000013078 crystal Substances 0.000 abstract 2
- 238000000151 deposition Methods 0.000 abstract 2
- 230000008021 deposition Effects 0.000 abstract 2
- 239000000203 mixture Substances 0.000 abstract 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 abstract 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 abstract 1
- 150000007513 acids Chemical class 0.000 abstract 1
- 238000003486 chemical etching Methods 0.000 abstract 1
- 238000004140 cleaning Methods 0.000 abstract 1
- 239000008367 deionised water Substances 0.000 abstract 1
- 229910021641 deionized water Inorganic materials 0.000 abstract 1
- 238000000407 epitaxy Methods 0.000 abstract 1
- 239000007792 gaseous phase Substances 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 229910017604 nitric acid Inorganic materials 0.000 abstract 1
- 238000002161 passivation Methods 0.000 abstract 1
- 238000000926 separation method Methods 0.000 abstract 1
- 238000007669 thermal treatment Methods 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
The invention relates to the field of manufacture of semiconducting elements, namely to the manufacture of ultrarapid high-temperature high-voltage diodes.The process for the manufacture of high-voltage diode includes growth of the semiconducting structure of A3B5 type by the method of chloride gaseous-phase epitaxy, deposition of metal layers for the creation of contacts, separation of the crystal structure in the form of disk by the method of chemical etching thereof in acid solution, comprising a mixture of 25...52 vol.% of nitric acid in hydrochloric acid, and deionized water, constituting up to 10 parts to one part of mixture of acids, cleaning of p-n junction output surface on the lateral surface of crystal, deposition of a passivation layer from the A element oxide on the surface of the p-n junction output on the surface and the thermal treatment thereof in inert atmosphere at the temperature of 560...600°C during 30...50 min., assembly and capsulation of high-voltage diode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| MDS20090054A MD176Z (en) | 2009-04-15 | 2009-04-15 | Process for the manufacture of high-voltage diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| MDS20090054A MD176Z (en) | 2009-04-15 | 2009-04-15 | Process for the manufacture of high-voltage diode |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| MD176Y MD176Y (en) | 2010-03-31 |
| MD176Z true MD176Z (en) | 2010-10-31 |
Family
ID=43568948
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| MDS20090054A MD176Z (en) | 2009-04-15 | 2009-04-15 | Process for the manufacture of high-voltage diode |
Country Status (1)
| Country | Link |
|---|---|
| MD (1) | MD176Z (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| MD3815C2 (en) * | 2007-07-04 | 2009-08-31 | Эдуард ПРОДАН | Water-supply system and process |
| MD4182C1 (en) * | 2011-04-15 | 2013-04-30 | Государственный Университет Молд0 | Semiconductor device with relief p-n junction (embodiments) |
| MD4261B1 (en) * | 2011-05-12 | 2013-11-30 | Государственный Университет Молд0 | Method for manufacturing a semiconductor device with relief p-n junction (embodiments) |
| MD972Z (en) * | 2015-02-19 | 2016-06-30 | Государственный Университет Молд0 | Method for p+InP-p-InP-n+CdS structure growth for photovoltaic cells |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| MD196Z (en) * | 2009-04-15 | 2010-11-30 | Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы | High-temperature diode column |
Citations (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5986215A (en) * | 1982-11-08 | 1984-05-18 | Mitsubishi Electric Corp | Vapor growth method of gallium arsenide |
| JPH01244612A (en) * | 1988-03-25 | 1989-09-29 | Nec Corp | Method and apparatus for vapor growth of gallium arsenide |
| JPH0296327A (en) * | 1988-09-30 | 1990-04-09 | Nec Corp | Vapor phase growing method of gallium arsenide |
| SU1800856A1 (en) * | 1990-05-16 | 1995-06-19 | Научно-исследовательский институт "Пульсар" | Method for production of epitaxial structures on gallium arsenide substrate |
| SU1788871A1 (en) * | 1990-01-12 | 1996-01-20 | Физико-технический институт им.А.Ф.Иоффе | Method for epitaxial accretion of gallium-arsenide layers on silicon substrates and device for implementation of said method |
| KR960003850B1 (en) * | 1992-12-04 | 1996-03-23 | 재단법인 한국전자통신연구소 | Method for manufacturing compound semiconductor device using aluminum arsenic (AlAs) protective film |
| JPH0883782A (en) * | 1994-09-08 | 1996-03-26 | Nippondenso Co Ltd | Method for manufacturing compound semiconductor device |
| SU1589918A1 (en) * | 1989-01-23 | 1996-11-27 | Физико-технический институт им.А.Ф.Иоффе | Process of manufacture of heteroepitaxial layers of gallium arsenide |
| MD930G2 (en) * | 1997-04-09 | 1999-01-31 | Государственный Университет Молд0 | Process for obtaining semiconducter layer materials from the gas phase |
| RU99117920A (en) * | 1998-08-21 | 2001-07-20 | Асеа Браун Бовери АГ | METHOD FOR PRODUCING SEMICONDUCTOR ELEMENT AND SEMICONDUCTOR ELEMENT |
| CN1588612A (en) * | 2004-07-09 | 2005-03-02 | 中国科学院上海微系统与信息技术研究所 | Direct bonding method for indium phosphide and gallium arsenide materials |
| MD2937C2 (en) * | 2004-02-05 | 2006-09-30 | Производственно-Коммерческая Фирма "Discret Element" Ооо | process for cleaning of machining attachments from waste after epitaxial growth of semiconductor layers of the type A3B5 |
| MD3257G2 (en) * | 2006-03-17 | 2007-09-30 | Производственно-Коммерческая Фирма "Discret Element" Ооо | Process for gallium and arsenic recovery from waste formed after epitaxial growth of semiconductor layers of the type A3B5 |
| RU2007106293A (en) * | 2007-02-19 | 2008-08-27 | Открытое акционерное общество "Научно-исследовательский институт полупроводниковых приборов" (ОАО "НИИПП") (RU) | METHOD FOR PRODUCING SEMICONDUCTOR DIODE |
-
2009
- 2009-04-15 MD MDS20090054A patent/MD176Z/en not_active IP Right Cessation
Patent Citations (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5986215A (en) * | 1982-11-08 | 1984-05-18 | Mitsubishi Electric Corp | Vapor growth method of gallium arsenide |
| JPH01244612A (en) * | 1988-03-25 | 1989-09-29 | Nec Corp | Method and apparatus for vapor growth of gallium arsenide |
| JPH0296327A (en) * | 1988-09-30 | 1990-04-09 | Nec Corp | Vapor phase growing method of gallium arsenide |
| SU1589918A1 (en) * | 1989-01-23 | 1996-11-27 | Физико-технический институт им.А.Ф.Иоффе | Process of manufacture of heteroepitaxial layers of gallium arsenide |
| SU1788871A1 (en) * | 1990-01-12 | 1996-01-20 | Физико-технический институт им.А.Ф.Иоффе | Method for epitaxial accretion of gallium-arsenide layers on silicon substrates and device for implementation of said method |
| SU1800856A1 (en) * | 1990-05-16 | 1995-06-19 | Научно-исследовательский институт "Пульсар" | Method for production of epitaxial structures on gallium arsenide substrate |
| KR960003850B1 (en) * | 1992-12-04 | 1996-03-23 | 재단법인 한국전자통신연구소 | Method for manufacturing compound semiconductor device using aluminum arsenic (AlAs) protective film |
| JPH0883782A (en) * | 1994-09-08 | 1996-03-26 | Nippondenso Co Ltd | Method for manufacturing compound semiconductor device |
| MD930G2 (en) * | 1997-04-09 | 1999-01-31 | Государственный Университет Молд0 | Process for obtaining semiconducter layer materials from the gas phase |
| RU99117920A (en) * | 1998-08-21 | 2001-07-20 | Асеа Браун Бовери АГ | METHOD FOR PRODUCING SEMICONDUCTOR ELEMENT AND SEMICONDUCTOR ELEMENT |
| MD2937C2 (en) * | 2004-02-05 | 2006-09-30 | Производственно-Коммерческая Фирма "Discret Element" Ооо | process for cleaning of machining attachments from waste after epitaxial growth of semiconductor layers of the type A3B5 |
| CN1588612A (en) * | 2004-07-09 | 2005-03-02 | 中国科学院上海微系统与信息技术研究所 | Direct bonding method for indium phosphide and gallium arsenide materials |
| MD3257G2 (en) * | 2006-03-17 | 2007-09-30 | Производственно-Коммерческая Фирма "Discret Element" Ооо | Process for gallium and arsenic recovery from waste formed after epitaxial growth of semiconductor layers of the type A3B5 |
| RU2007106293A (en) * | 2007-02-19 | 2008-08-27 | Открытое акционерное общество "Научно-исследовательский институт полупроводниковых приборов" (ОАО "НИИПП") (RU) | METHOD FOR PRODUCING SEMICONDUCTOR DIODE |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| MD3815C2 (en) * | 2007-07-04 | 2009-08-31 | Эдуард ПРОДАН | Water-supply system and process |
| MD4182C1 (en) * | 2011-04-15 | 2013-04-30 | Государственный Университет Молд0 | Semiconductor device with relief p-n junction (embodiments) |
| MD4261B1 (en) * | 2011-05-12 | 2013-11-30 | Государственный Университет Молд0 | Method for manufacturing a semiconductor device with relief p-n junction (embodiments) |
| MD972Z (en) * | 2015-02-19 | 2016-06-30 | Государственный Университет Молд0 | Method for p+InP-p-InP-n+CdS structure growth for photovoltaic cells |
Also Published As
| Publication number | Publication date |
|---|---|
| MD176Y (en) | 2010-03-31 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| KA4Y | Short-term patent lapsed due to non-payment of fees (with right of restoration) |