MD2937C2 - process for cleaning of machining attachments from waste after epitaxial growth of semiconductor layers of the type A3B5 - Google Patents
process for cleaning of machining attachments from waste after epitaxial growth of semiconductor layers of the type A3B5 Download PDFInfo
- Publication number
- MD2937C2 MD2937C2 MDA20040033A MD20040033A MD2937C2 MD 2937 C2 MD2937 C2 MD 2937C2 MD A20040033 A MDA20040033 A MD A20040033A MD 20040033 A MD20040033 A MD 20040033A MD 2937 C2 MD2937 C2 MD 2937C2
- Authority
- MD
- Moldova
- Prior art keywords
- waste
- cleaning
- epitaxial growth
- semiconductor layers
- type
- Prior art date
Links
- 238000003754 machining Methods 0.000 title abstract 4
- 239000004065 semiconductor Substances 0.000 title abstract 4
- 239000002699 waste material Substances 0.000 title abstract 4
- 238000004140 cleaning Methods 0.000 title abstract 3
- 238000000034 method Methods 0.000 title abstract 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 abstract 4
- 229910017604 nitric acid Inorganic materials 0.000 abstract 4
- 239000002253 acid Substances 0.000 abstract 3
- 239000008367 deionised water Substances 0.000 abstract 2
- 229910021641 deionized water Inorganic materials 0.000 abstract 2
- 239000000126 substance Substances 0.000 abstract 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 abstract 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 abstract 1
- 238000001035 drying Methods 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 abstract 1
- IXCSERBJSXMMFS-UHFFFAOYSA-N hcl hcl Chemical compound Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 239000000203 mixture Substances 0.000 abstract 1
- 238000005406 washing Methods 0.000 abstract 1
Landscapes
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Led Devices (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention relates to the technology of semiconductor materials and may be used for cleaning of machining attachments from waste after epitaxial growth of semiconductor layers of gallium arsenide or indium phosphide.The process for cleaning of machining attachments from waste after epitaxial growth of semiconductor layers of the type A3B5 includes the chemical treatment of the machining attachments part with waste by submergence into a vessel filled with acid solution, containing a mixture of nitric acid HNO3 and hydrochloric acid HCl, subsequent washing thereof with deionized water and drying. The chemical treatment is carried out with acid solution, containing 25…52 vol.% of nitric acid HNO3. The acid solution is preliminarily degasified during 1,5…4 hours in deionized water.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| MDA20040033A MD2937C2 (en) | 2004-02-05 | 2004-02-05 | process for cleaning of machining attachments from waste after epitaxial growth of semiconductor layers of the type A3B5 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| MDA20040033A MD2937C2 (en) | 2004-02-05 | 2004-02-05 | process for cleaning of machining attachments from waste after epitaxial growth of semiconductor layers of the type A3B5 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| MD2937B1 MD2937B1 (en) | 2005-12-31 |
| MD2937C2 true MD2937C2 (en) | 2006-09-30 |
Family
ID=35508811
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| MDA20040033A MD2937C2 (en) | 2004-02-05 | 2004-02-05 | process for cleaning of machining attachments from waste after epitaxial growth of semiconductor layers of the type A3B5 |
Country Status (1)
| Country | Link |
|---|---|
| MD (1) | MD2937C2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| MD3257G2 (en) * | 2006-03-17 | 2007-09-30 | Производственно-Коммерческая Фирма "Discret Element" Ооо | Process for gallium and arsenic recovery from waste formed after epitaxial growth of semiconductor layers of the type A3B5 |
| MD176Z (en) * | 2009-04-15 | 2010-10-31 | Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы | Process for the manufacture of high-voltage diode |
| MD196Z (en) * | 2009-04-15 | 2010-11-30 | Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы | High-temperature diode column |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4094753A (en) * | 1977-06-01 | 1978-06-13 | Cominco Ltd. | Recovery of gallium from gallium compounds |
| US4353779A (en) * | 1981-08-14 | 1982-10-12 | Westinghouse Electric Corp. | Wet chemical etching of III/V semiconductor material without gas evolution |
| US4759917A (en) * | 1987-02-24 | 1988-07-26 | Monsanto Company | Oxidative dissolution of gallium arsenide and separation of gallium from arsenic |
-
2004
- 2004-02-05 MD MDA20040033A patent/MD2937C2/en not_active IP Right Cessation
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4094753A (en) * | 1977-06-01 | 1978-06-13 | Cominco Ltd. | Recovery of gallium from gallium compounds |
| US4353779A (en) * | 1981-08-14 | 1982-10-12 | Westinghouse Electric Corp. | Wet chemical etching of III/V semiconductor material without gas evolution |
| US4759917A (en) * | 1987-02-24 | 1988-07-26 | Monsanto Company | Oxidative dissolution of gallium arsenide and separation of gallium from arsenic |
Non-Patent Citations (2)
| Title |
|---|
| Bird et al. The Hydrometallurgy of the rarer metals. Dallas, 1982 * |
| Bird et all. The Hydrometallurgy of the rarer metals. Dallas, 1982 * |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| MD3257G2 (en) * | 2006-03-17 | 2007-09-30 | Производственно-Коммерческая Фирма "Discret Element" Ооо | Process for gallium and arsenic recovery from waste formed after epitaxial growth of semiconductor layers of the type A3B5 |
| MD176Z (en) * | 2009-04-15 | 2010-10-31 | Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы | Process for the manufacture of high-voltage diode |
| MD196Z (en) * | 2009-04-15 | 2010-11-30 | Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы | High-temperature diode column |
Also Published As
| Publication number | Publication date |
|---|---|
| MD2937B1 (en) | 2005-12-31 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FG4A | Patent for invention issued | ||
| KA4A | Patent for invention lapsed due to non-payment of fees (with right of restoration) | ||
| MM4A | Patent for invention definitely lapsed due to non-payment of fees |