MD2937C2 - process for cleaning of machining attachments from waste after epitaxial growth of semiconductor layers of the type A3B5 - Google Patents

process for cleaning of machining attachments from waste after epitaxial growth of semiconductor layers of the type A3B5

Info

Publication number
MD2937C2
MD2937C2 MDA20040033A MD20040033A MD2937C2 MD 2937 C2 MD2937 C2 MD 2937C2 MD A20040033 A MDA20040033 A MD A20040033A MD 20040033 A MD20040033 A MD 20040033A MD 2937 C2 MD2937 C2 MD 2937C2
Authority
MD
Moldova
Prior art keywords
waste
cleaning
epitaxial growth
semiconductor layers
type
Prior art date
Application number
MDA20040033A
Other languages
Romanian (ro)
Russian (ru)
Other versions
MD2937B1 (en
Inventor
Симион БАРАНОВ
Борис ЧИНИК
Джоан РЕДУИНГ
Виталие СТАВИЛЭ
Original Assignee
Производственно-Коммерческая Фирма "Discret Element" Ооо
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Производственно-Коммерческая Фирма "Discret Element" Ооо filed Critical Производственно-Коммерческая Фирма "Discret Element" Ооо
Priority to MDA20040033A priority Critical patent/MD2937C2/en
Publication of MD2937B1 publication Critical patent/MD2937B1/en
Publication of MD2937C2 publication Critical patent/MD2937C2/en

Links

Landscapes

  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Led Devices (AREA)

Abstract

The invention relates to the technology of semiconductor materials and may be used for cleaning of machining attachments from waste after epitaxial growth of semiconductor layers of gallium arsenide or indium phosphide.The process for cleaning of machining attachments from waste after epitaxial growth of semiconductor layers of the type A3B5 includes the chemical treatment of the machining attachments part with waste by submergence into a vessel filled with acid solution, containing a mixture of nitric acid HNO3 and hydrochloric acid HCl, subsequent washing thereof with deionized water and drying. The chemical treatment is carried out with acid solution, containing 25…52 vol.% of nitric acid HNO3. The acid solution is preliminarily degasified during 1,5…4 hours in deionized water.
MDA20040033A 2004-02-05 2004-02-05 process for cleaning of machining attachments from waste after epitaxial growth of semiconductor layers of the type A3B5 MD2937C2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
MDA20040033A MD2937C2 (en) 2004-02-05 2004-02-05 process for cleaning of machining attachments from waste after epitaxial growth of semiconductor layers of the type A3B5

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
MDA20040033A MD2937C2 (en) 2004-02-05 2004-02-05 process for cleaning of machining attachments from waste after epitaxial growth of semiconductor layers of the type A3B5

Publications (2)

Publication Number Publication Date
MD2937B1 MD2937B1 (en) 2005-12-31
MD2937C2 true MD2937C2 (en) 2006-09-30

Family

ID=35508811

Family Applications (1)

Application Number Title Priority Date Filing Date
MDA20040033A MD2937C2 (en) 2004-02-05 2004-02-05 process for cleaning of machining attachments from waste after epitaxial growth of semiconductor layers of the type A3B5

Country Status (1)

Country Link
MD (1) MD2937C2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MD3257G2 (en) * 2006-03-17 2007-09-30 Производственно-Коммерческая Фирма "Discret Element" Ооо Process for gallium and arsenic recovery from waste formed after epitaxial growth of semiconductor layers of the type A3B5
MD176Z (en) * 2009-04-15 2010-10-31 Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы Process for the manufacture of high-voltage diode
MD196Z (en) * 2009-04-15 2010-11-30 Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы High-temperature diode column

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4094753A (en) * 1977-06-01 1978-06-13 Cominco Ltd. Recovery of gallium from gallium compounds
US4353779A (en) * 1981-08-14 1982-10-12 Westinghouse Electric Corp. Wet chemical etching of III/V semiconductor material without gas evolution
US4759917A (en) * 1987-02-24 1988-07-26 Monsanto Company Oxidative dissolution of gallium arsenide and separation of gallium from arsenic

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4094753A (en) * 1977-06-01 1978-06-13 Cominco Ltd. Recovery of gallium from gallium compounds
US4353779A (en) * 1981-08-14 1982-10-12 Westinghouse Electric Corp. Wet chemical etching of III/V semiconductor material without gas evolution
US4759917A (en) * 1987-02-24 1988-07-26 Monsanto Company Oxidative dissolution of gallium arsenide and separation of gallium from arsenic

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
Bird et al. The Hydrometallurgy of the rarer metals. Dallas, 1982 *
Bird et all. The Hydrometallurgy of the rarer metals. Dallas, 1982 *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MD3257G2 (en) * 2006-03-17 2007-09-30 Производственно-Коммерческая Фирма "Discret Element" Ооо Process for gallium and arsenic recovery from waste formed after epitaxial growth of semiconductor layers of the type A3B5
MD176Z (en) * 2009-04-15 2010-10-31 Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы Process for the manufacture of high-voltage diode
MD196Z (en) * 2009-04-15 2010-11-30 Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы High-temperature diode column

Also Published As

Publication number Publication date
MD2937B1 (en) 2005-12-31

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Legal Events

Date Code Title Description
FG4A Patent for invention issued
KA4A Patent for invention lapsed due to non-payment of fees (with right of restoration)
MM4A Patent for invention definitely lapsed due to non-payment of fees