MD196Z - High-temperature diode column - Google Patents

High-temperature diode column Download PDF

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Publication number
MD196Z
MD196Z MDS20090053A MDS20090053A MD196Z MD 196 Z MD196 Z MD 196Z MD S20090053 A MDS20090053 A MD S20090053A MD S20090053 A MDS20090053 A MD S20090053A MD 196 Z MD196 Z MD 196Z
Authority
MD
Moldova
Prior art keywords
diode
temperature
column
coefficient
thermal expansion
Prior art date
Application number
MDS20090053A
Other languages
Romanian (ro)
Russian (ru)
Inventor
Симион БАРАНОВ
Борис ЧИНИК
Original Assignee
Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы
Симион БАРАНОВ
Борис ЧИНИК
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы, Симион БАРАНОВ, Борис ЧИНИК filed Critical Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы
Priority to MDS20090053A priority Critical patent/MD196Z/en
Publication of MD196Y publication Critical patent/MD196Y/en
Publication of MD196Z publication Critical patent/MD196Z/en

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Abstract

The invention relates to the field of high-temperature electronics and can be used in electrical engineering or other technical fields, where small-size high-voltage converters are required, for example, in the power supply of the generator of roentgenotechnical installations or in the power supply of the magnetron of microwave device converter.The high-temperature diode column contains high-voltage rectifier diodes, which consist of a semiconductor of A3B5 type with forbidden energy band larger than 1.1 eV, and a passivating and protective layer of the A element oxide, deposited on the p-n junction output surface on the surface. The diode column also contains metal disks with the coefficient of thermal expansion close to the coefficient of thermal expansion of the diode semiconductor located between the rectifier diodes on the column axis at least across one diode and connected in series with them, collected and encapsulated in a plastic casing with two output terminals which are flexibly connected to the extreme diodes by way of metal disks.The result consists in increasing the working temperature of the high-temperature diode column up to 200°C and decreasing the reverse recovery time below 60 ns.
MDS20090053A 2009-04-15 2009-04-15 High-temperature diode column MD196Z (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
MDS20090053A MD196Z (en) 2009-04-15 2009-04-15 High-temperature diode column

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
MDS20090053A MD196Z (en) 2009-04-15 2009-04-15 High-temperature diode column

Publications (2)

Publication Number Publication Date
MD196Y MD196Y (en) 2010-04-30
MD196Z true MD196Z (en) 2010-11-30

Family

ID=43569613

Family Applications (1)

Application Number Title Priority Date Filing Date
MDS20090053A MD196Z (en) 2009-04-15 2009-04-15 High-temperature diode column

Country Status (1)

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MD (1) MD196Z (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MD4182C1 (en) * 2011-04-15 2013-04-30 Государственный Университет Молд0 Semiconductor device with relief p-n junction (embodiments)
MD4261B1 (en) * 2011-05-12 2013-11-30 Государственный Университет Молд0 Method for manufacturing a semiconductor device with relief p-n junction (embodiments)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2003121273A (en) * 2003-07-09 2005-02-27 Ооо "Атом-Пиф" (Ru) POST DIODE AVALANCHE
MD2937C2 (en) * 2004-02-05 2006-09-30 Производственно-Коммерческая Фирма "Discret Element" Ооо process for cleaning of machining attachments from waste after epitaxial growth of semiconductor layers of the type A3B5
MD3257G2 (en) * 2006-03-17 2007-09-30 Производственно-Коммерческая Фирма "Discret Element" Ооо Process for gallium and arsenic recovery from waste formed after epitaxial growth of semiconductor layers of the type A3B5
MD176Y (en) * 2009-04-15 2010-03-31 Institutul De Inginerie Electronica Si Tehnologii Industriale Al Academiei De Stiinte A Moldovei Process for the manufacture of high-voltage diode
  • 2009

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2003121273A (en) * 2003-07-09 2005-02-27 Ооо "Атом-Пиф" (Ru) POST DIODE AVALANCHE
MD2937C2 (en) * 2004-02-05 2006-09-30 Производственно-Коммерческая Фирма "Discret Element" Ооо process for cleaning of machining attachments from waste after epitaxial growth of semiconductor layers of the type A3B5
MD3257G2 (en) * 2006-03-17 2007-09-30 Производственно-Коммерческая Фирма "Discret Element" Ооо Process for gallium and arsenic recovery from waste formed after epitaxial growth of semiconductor layers of the type A3B5
MD176Y (en) * 2009-04-15 2010-03-31 Institutul De Inginerie Electronica Si Tehnologii Industriale Al Academiei De Stiinte A Moldovei Process for the manufacture of high-voltage diode

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MD4182C1 (en) * 2011-04-15 2013-04-30 Государственный Университет Молд0 Semiconductor device with relief p-n junction (embodiments)
MD4261B1 (en) * 2011-05-12 2013-11-30 Государственный Университет Молд0 Method for manufacturing a semiconductor device with relief p-n junction (embodiments)

Also Published As

Publication number Publication date
MD196Y (en) 2010-04-30

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KA4Y Short-term patent lapsed due to non-payment of fees (with right of restoration)