MD2937C2 - Procedeu de curăţire a utilajului tehnologic de deşeuri după creşterea epitaxiala a straturilor semiconductoare de tipul A3B5 - Google Patents

Procedeu de curăţire a utilajului tehnologic de deşeuri după creşterea epitaxiala a straturilor semiconductoare de tipul A3B5

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Publication number
MD2937C2
MD2937C2 MDA20040033A MD20040033A MD2937C2 MD 2937 C2 MD2937 C2 MD 2937C2 MD A20040033 A MDA20040033 A MD A20040033A MD 20040033 A MD20040033 A MD 20040033A MD 2937 C2 MD2937 C2 MD 2937C2
Authority
MD
Moldova
Prior art keywords
waste
cleaning
epitaxial growth
semiconductor layers
type
Prior art date
Application number
MDA20040033A
Other languages
English (en)
Russian (ru)
Other versions
MD2937B1 (ro
Inventor
Симион БАРАНОВ
Борис ЧИНИК
Джоан РЕДУИНГ
Виталие СТАВИЛЭ
Original Assignee
Производственно-Коммерческая Фирма "Discret Element" Ооо
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Производственно-Коммерческая Фирма "Discret Element" Ооо filed Critical Производственно-Коммерческая Фирма "Discret Element" Ооо
Priority to MDA20040033A priority Critical patent/MD2937C2/ro
Publication of MD2937B1 publication Critical patent/MD2937B1/ro
Publication of MD2937C2 publication Critical patent/MD2937C2/ro

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  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Led Devices (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

Invenţia se referă la tehnologia materialelor semiconductoare şi poate fi utilizată pentru curăţirea utilajului tehnologic de deşeuri după creşterea epitaxială a straturilor semiconductoare de arsenit de galiu sau fosfură de indiu.Procedeul de curăţire a utilajului tehnologic de deşeuri după creşterea epitaxială a straturilor semiconductoare de tipul A3B5 include tratarea chimică a părţii utilajului tehnologic cu deşeuri prin afundarea într-un vas cu soluţie acidă, care conţine un amestec de acid azotic HNO3 şi acid clorhidric HCl, şi spălarea lui ulterioară cu apă deionizată şi uscarea. Tratarea chimică se efectuează cu soluţie acidă care conţine 25 … 52%vol. de acid azotic HNO3. Soluţia acidă prealabil se degazează timp de 1,5 … 4 ore în apă deionizată.
MDA20040033A 2004-02-05 2004-02-05 Procedeu de curăţire a utilajului tehnologic de deşeuri după creşterea epitaxiala a straturilor semiconductoare de tipul A3B5 MD2937C2 (ro)

Priority Applications (1)

Application Number Priority Date Filing Date Title
MDA20040033A MD2937C2 (ro) 2004-02-05 2004-02-05 Procedeu de curăţire a utilajului tehnologic de deşeuri după creşterea epitaxiala a straturilor semiconductoare de tipul A3B5

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
MDA20040033A MD2937C2 (ro) 2004-02-05 2004-02-05 Procedeu de curăţire a utilajului tehnologic de deşeuri după creşterea epitaxiala a straturilor semiconductoare de tipul A3B5

Publications (2)

Publication Number Publication Date
MD2937B1 MD2937B1 (ro) 2005-12-31
MD2937C2 true MD2937C2 (ro) 2006-09-30

Family

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Family Applications (1)

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MDA20040033A MD2937C2 (ro) 2004-02-05 2004-02-05 Procedeu de curăţire a utilajului tehnologic de deşeuri după creşterea epitaxiala a straturilor semiconductoare de tipul A3B5

Country Status (1)

Country Link
MD (1) MD2937C2 (ro)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MD3257G2 (ro) * 2006-03-17 2007-09-30 Производственно-Коммерческая Фирма "Discret Element" Ооо Procedeu de recuperare a galiului şi arsenului din deşeul format după creşterea epitaxială a straturilor semiconductoare de tip A3B5
MD176Z (ro) * 2009-04-15 2010-10-31 Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы Procedeu de fabricare a diodei de tensiune înaltă
MD196Z (ro) * 2009-04-15 2010-11-30 Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы Coloană de diode de temperatură înaltă

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4094753A (en) * 1977-06-01 1978-06-13 Cominco Ltd. Recovery of gallium from gallium compounds
US4353779A (en) * 1981-08-14 1982-10-12 Westinghouse Electric Corp. Wet chemical etching of III/V semiconductor material without gas evolution
US4759917A (en) * 1987-02-24 1988-07-26 Monsanto Company Oxidative dissolution of gallium arsenide and separation of gallium from arsenic

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4094753A (en) * 1977-06-01 1978-06-13 Cominco Ltd. Recovery of gallium from gallium compounds
US4353779A (en) * 1981-08-14 1982-10-12 Westinghouse Electric Corp. Wet chemical etching of III/V semiconductor material without gas evolution
US4759917A (en) * 1987-02-24 1988-07-26 Monsanto Company Oxidative dissolution of gallium arsenide and separation of gallium from arsenic

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
Bird et al. The Hydrometallurgy of the rarer metals. Dallas, 1982 *
Bird et all. The Hydrometallurgy of the rarer metals. Dallas, 1982 *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MD3257G2 (ro) * 2006-03-17 2007-09-30 Производственно-Коммерческая Фирма "Discret Element" Ооо Procedeu de recuperare a galiului şi arsenului din deşeul format după creşterea epitaxială a straturilor semiconductoare de tip A3B5
MD176Z (ro) * 2009-04-15 2010-10-31 Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы Procedeu de fabricare a diodei de tensiune înaltă
MD196Z (ro) * 2009-04-15 2010-11-30 Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы Coloană de diode de temperatură înaltă

Also Published As

Publication number Publication date
MD2937B1 (ro) 2005-12-31

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FG4A Patent for invention issued
KA4A Patent for invention lapsed due to non-payment of fees (with right of restoration)
MM4A Patent for invention definitely lapsed due to non-payment of fees