MD2937C2 - Procedeu de curăţire a utilajului tehnologic de deşeuri după creşterea epitaxiala a straturilor semiconductoare de tipul A3B5 - Google Patents
Procedeu de curăţire a utilajului tehnologic de deşeuri după creşterea epitaxiala a straturilor semiconductoare de tipul A3B5 Download PDFInfo
- Publication number
- MD2937C2 MD2937C2 MDA20040033A MD20040033A MD2937C2 MD 2937 C2 MD2937 C2 MD 2937C2 MD A20040033 A MDA20040033 A MD A20040033A MD 20040033 A MD20040033 A MD 20040033A MD 2937 C2 MD2937 C2 MD 2937C2
- Authority
- MD
- Moldova
- Prior art keywords
- waste
- cleaning
- epitaxial growth
- semiconductor layers
- type
- Prior art date
Links
- 238000003754 machining Methods 0.000 title abstract 4
- 239000004065 semiconductor Substances 0.000 title abstract 4
- 239000002699 waste material Substances 0.000 title abstract 4
- 238000004140 cleaning Methods 0.000 title abstract 3
- 238000000034 method Methods 0.000 title abstract 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 abstract 4
- 229910017604 nitric acid Inorganic materials 0.000 abstract 4
- 239000002253 acid Substances 0.000 abstract 3
- 239000008367 deionised water Substances 0.000 abstract 2
- 229910021641 deionized water Inorganic materials 0.000 abstract 2
- 239000000126 substance Substances 0.000 abstract 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 abstract 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 abstract 1
- 238000001035 drying Methods 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 abstract 1
- IXCSERBJSXMMFS-UHFFFAOYSA-N hcl hcl Chemical compound Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 239000000203 mixture Substances 0.000 abstract 1
- 238000005406 washing Methods 0.000 abstract 1
Landscapes
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Led Devices (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Invenţia se referă la tehnologia materialelor semiconductoare şi poate fi utilizată pentru curăţirea utilajului tehnologic de deşeuri după creşterea epitaxială a straturilor semiconductoare de arsenit de galiu sau fosfură de indiu.Procedeul de curăţire a utilajului tehnologic de deşeuri după creşterea epitaxială a straturilor semiconductoare de tipul A3B5 include tratarea chimică a părţii utilajului tehnologic cu deşeuri prin afundarea într-un vas cu soluţie acidă, care conţine un amestec de acid azotic HNO3 şi acid clorhidric HCl, şi spălarea lui ulterioară cu apă deionizată şi uscarea. Tratarea chimică se efectuează cu soluţie acidă care conţine 25 … 52%vol. de acid azotic HNO3. Soluţia acidă prealabil se degazează timp de 1,5 … 4 ore în apă deionizată.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| MDA20040033A MD2937C2 (ro) | 2004-02-05 | 2004-02-05 | Procedeu de curăţire a utilajului tehnologic de deşeuri după creşterea epitaxiala a straturilor semiconductoare de tipul A3B5 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| MDA20040033A MD2937C2 (ro) | 2004-02-05 | 2004-02-05 | Procedeu de curăţire a utilajului tehnologic de deşeuri după creşterea epitaxiala a straturilor semiconductoare de tipul A3B5 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| MD2937B1 MD2937B1 (ro) | 2005-12-31 |
| MD2937C2 true MD2937C2 (ro) | 2006-09-30 |
Family
ID=35508811
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| MDA20040033A MD2937C2 (ro) | 2004-02-05 | 2004-02-05 | Procedeu de curăţire a utilajului tehnologic de deşeuri după creşterea epitaxiala a straturilor semiconductoare de tipul A3B5 |
Country Status (1)
| Country | Link |
|---|---|
| MD (1) | MD2937C2 (ro) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| MD3257G2 (ro) * | 2006-03-17 | 2007-09-30 | Производственно-Коммерческая Фирма "Discret Element" Ооо | Procedeu de recuperare a galiului şi arsenului din deşeul format după creşterea epitaxială a straturilor semiconductoare de tip A3B5 |
| MD176Z (ro) * | 2009-04-15 | 2010-10-31 | Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы | Procedeu de fabricare a diodei de tensiune înaltă |
| MD196Z (ro) * | 2009-04-15 | 2010-11-30 | Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы | Coloană de diode de temperatură înaltă |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4094753A (en) * | 1977-06-01 | 1978-06-13 | Cominco Ltd. | Recovery of gallium from gallium compounds |
| US4353779A (en) * | 1981-08-14 | 1982-10-12 | Westinghouse Electric Corp. | Wet chemical etching of III/V semiconductor material without gas evolution |
| US4759917A (en) * | 1987-02-24 | 1988-07-26 | Monsanto Company | Oxidative dissolution of gallium arsenide and separation of gallium from arsenic |
-
2004
- 2004-02-05 MD MDA20040033A patent/MD2937C2/ro not_active IP Right Cessation
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4094753A (en) * | 1977-06-01 | 1978-06-13 | Cominco Ltd. | Recovery of gallium from gallium compounds |
| US4353779A (en) * | 1981-08-14 | 1982-10-12 | Westinghouse Electric Corp. | Wet chemical etching of III/V semiconductor material without gas evolution |
| US4759917A (en) * | 1987-02-24 | 1988-07-26 | Monsanto Company | Oxidative dissolution of gallium arsenide and separation of gallium from arsenic |
Non-Patent Citations (2)
| Title |
|---|
| Bird et al. The Hydrometallurgy of the rarer metals. Dallas, 1982 * |
| Bird et all. The Hydrometallurgy of the rarer metals. Dallas, 1982 * |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| MD3257G2 (ro) * | 2006-03-17 | 2007-09-30 | Производственно-Коммерческая Фирма "Discret Element" Ооо | Procedeu de recuperare a galiului şi arsenului din deşeul format după creşterea epitaxială a straturilor semiconductoare de tip A3B5 |
| MD176Z (ro) * | 2009-04-15 | 2010-10-31 | Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы | Procedeu de fabricare a diodei de tensiune înaltă |
| MD196Z (ro) * | 2009-04-15 | 2010-11-30 | Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы | Coloană de diode de temperatură înaltă |
Also Published As
| Publication number | Publication date |
|---|---|
| MD2937B1 (ro) | 2005-12-31 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FG4A | Patent for invention issued | ||
| KA4A | Patent for invention lapsed due to non-payment of fees (with right of restoration) | ||
| MM4A | Patent for invention definitely lapsed due to non-payment of fees |