MD176Z - Procedeu de fabricare a diodei de tensiune înaltă - Google Patents
Procedeu de fabricare a diodei de tensiune înaltă Download PDFInfo
- Publication number
- MD176Z MD176Z MDS20090054A MDS20090054A MD176Z MD 176 Z MD176 Z MD 176Z MD S20090054 A MDS20090054 A MD S20090054A MD S20090054 A MDS20090054 A MD S20090054A MD 176 Z MD176 Z MD 176Z
- Authority
- MD
- Moldova
- Prior art keywords
- manufacture
- voltage diode
- deposition
- mixture
- temperature
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 4
- 238000000034 method Methods 0.000 title abstract 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 abstract 2
- 239000002253 acid Substances 0.000 abstract 2
- 239000013078 crystal Substances 0.000 abstract 2
- 238000000151 deposition Methods 0.000 abstract 2
- 230000008021 deposition Effects 0.000 abstract 2
- 239000000203 mixture Substances 0.000 abstract 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 abstract 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 abstract 1
- 150000007513 acids Chemical class 0.000 abstract 1
- 238000003486 chemical etching Methods 0.000 abstract 1
- 238000004140 cleaning Methods 0.000 abstract 1
- 239000008367 deionised water Substances 0.000 abstract 1
- 229910021641 deionized water Inorganic materials 0.000 abstract 1
- 238000000407 epitaxy Methods 0.000 abstract 1
- 239000007792 gaseous phase Substances 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 229910017604 nitric acid Inorganic materials 0.000 abstract 1
- 238000002161 passivation Methods 0.000 abstract 1
- 238000000926 separation method Methods 0.000 abstract 1
- 238000007669 thermal treatment Methods 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 1
Landscapes
- Electrodes Of Semiconductors (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Invenţia se referă la domeniul de fabricare a elementelor semiconductoare, şi anume la fabricarea diodelor de înaltă tensiune ultrarapide de temperatură înaltă.Procedeul de fabricare a diodei de tensiune înaltă include creşterea structurii de redresare semiconductoare de tip A3B5 prin metoda de chloride epitaxie din fază gazoasă, depunerea straturilor metalice pentru formarea conexiunilor, decuparea structurii cristaline în formă de disc prin metoda de corodare chimică a acesteia în soluţie acidă, care conţine un amestec de 25...52% vol. de acid azotic în acid clorhidric, şi apă deionizată, ce constituie până la 10 părţi la o parte de amestec de acizi, curăţarea suprafeţei de ieşire a joncţiunii p-n la suprafaţa laterală a cristalului, depunerea unui strat de pasivizare din oxidul elementului A pe suprafaţa de ieşire a joncţiunii p-n la suprafaţă şi prelucrarea termică a acestuia în mediu inert la temperatura de 560…600ºC timp de 30…50 min, asamblarea şi capsularea diodei de tensiune înaltă.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| MDS20090054A MD176Z (ro) | 2009-04-15 | 2009-04-15 | Procedeu de fabricare a diodei de tensiune înaltă |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| MDS20090054A MD176Z (ro) | 2009-04-15 | 2009-04-15 | Procedeu de fabricare a diodei de tensiune înaltă |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| MD176Y MD176Y (ro) | 2010-03-31 |
| MD176Z true MD176Z (ro) | 2010-10-31 |
Family
ID=43568948
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| MDS20090054A MD176Z (ro) | 2009-04-15 | 2009-04-15 | Procedeu de fabricare a diodei de tensiune înaltă |
Country Status (1)
| Country | Link |
|---|---|
| MD (1) | MD176Z (ro) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| MD3815C2 (ro) * | 2007-07-04 | 2009-08-31 | Эдуард ПРОДАН | Sistem şi procedeu de alimentare cu apă |
| MD4182C1 (ro) * | 2011-04-15 | 2013-04-30 | Государственный Университет Молд0 | Dispozitiv semiconductor cu joncţiune p-n în relief (variante) |
| MD4261B1 (ro) * | 2011-05-12 | 2013-11-30 | Государственный Университет Молд0 | Procedeu de fabricare a dispozitivului semiconductor cu joncţiune p-n în relief (variante) |
| MD972Z (ro) * | 2015-02-19 | 2016-06-30 | Государственный Университет Молд0 | Procedeu de creştere a structurii p+InP-p-InP-n+CdS pentru celule fotovoltaice |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| MD196Z (ro) * | 2009-04-15 | 2010-11-30 | Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы | Coloană de diode de temperatură înaltă |
Citations (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5986215A (ja) * | 1982-11-08 | 1984-05-18 | Mitsubishi Electric Corp | ヒ化ガリウム結晶の気相成長方法 |
| JPH01244612A (ja) * | 1988-03-25 | 1989-09-29 | Nec Corp | 砒化ガリウムの気相成長方法及び気相成長装置 |
| JPH0296327A (ja) * | 1988-09-30 | 1990-04-09 | Nec Corp | 砒化ガリウムの気相成長方法 |
| SU1800856A1 (ru) * | 1990-05-16 | 1995-06-19 | Научно-исследовательский институт "Пульсар" | Способ получения эпитаксиальных структур на подложках арсенида галлия |
| SU1788871A1 (ru) * | 1990-01-12 | 1996-01-20 | Физико-технический институт им.А.Ф.Иоффе | Способ эпитаксиального наращивания слоев ga as на подложках si и устройство для его осуществления |
| KR960003850B1 (ko) * | 1992-12-04 | 1996-03-23 | 재단법인 한국전자통신연구소 | 알루미늄 비소(AlAs) 보호막을 이용한 화합물 반도체 소자의 제조방법 |
| JPH0883782A (ja) * | 1994-09-08 | 1996-03-26 | Nippondenso Co Ltd | 化合物半導体装置の製造方法 |
| SU1589918A1 (ru) * | 1989-01-23 | 1996-11-27 | Физико-технический институт им.А.Ф.Иоффе | Способ получения гетероэпитаксиальных слоев арсенида галлия |
| MD930G2 (ro) * | 1997-04-09 | 1999-01-31 | Государственный Университет Молд0 | Procedeu de obţinere a straturilor de materiale semiconductoare din fază gazoasă |
| RU99117920A (ru) * | 1998-08-21 | 2001-07-20 | Асеа Браун Бовери АГ | Способ изготовления полупроводникового элемента и полупроводниковый элемент |
| CN1588612A (zh) * | 2004-07-09 | 2005-03-02 | 中国科学院上海微系统与信息技术研究所 | 磷化铟和砷化镓材料的直接键合方法 |
| MD2937C2 (ro) * | 2004-02-05 | 2006-09-30 | Производственно-Коммерческая Фирма "Discret Element" Ооо | Procedeu de curăţire a utilajului tehnologic de deşeuri după creşterea epitaxiala a straturilor semiconductoare de tipul A3B5 |
| MD3257G2 (ro) * | 2006-03-17 | 2007-09-30 | Производственно-Коммерческая Фирма "Discret Element" Ооо | Procedeu de recuperare a galiului şi arsenului din deşeul format după creşterea epitaxială a straturilor semiconductoare de tip A3B5 |
| RU2007106293A (ru) * | 2007-02-19 | 2008-08-27 | Открытое акционерное общество "Научно-исследовательский институт полупроводниковых приборов" (ОАО "НИИПП") (RU) | Способ изготовления полупроводникового диода |
-
2009
- 2009-04-15 MD MDS20090054A patent/MD176Z/ro not_active IP Right Cessation
Patent Citations (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5986215A (ja) * | 1982-11-08 | 1984-05-18 | Mitsubishi Electric Corp | ヒ化ガリウム結晶の気相成長方法 |
| JPH01244612A (ja) * | 1988-03-25 | 1989-09-29 | Nec Corp | 砒化ガリウムの気相成長方法及び気相成長装置 |
| JPH0296327A (ja) * | 1988-09-30 | 1990-04-09 | Nec Corp | 砒化ガリウムの気相成長方法 |
| SU1589918A1 (ru) * | 1989-01-23 | 1996-11-27 | Физико-технический институт им.А.Ф.Иоффе | Способ получения гетероэпитаксиальных слоев арсенида галлия |
| SU1788871A1 (ru) * | 1990-01-12 | 1996-01-20 | Физико-технический институт им.А.Ф.Иоффе | Способ эпитаксиального наращивания слоев ga as на подложках si и устройство для его осуществления |
| SU1800856A1 (ru) * | 1990-05-16 | 1995-06-19 | Научно-исследовательский институт "Пульсар" | Способ получения эпитаксиальных структур на подложках арсенида галлия |
| KR960003850B1 (ko) * | 1992-12-04 | 1996-03-23 | 재단법인 한국전자통신연구소 | 알루미늄 비소(AlAs) 보호막을 이용한 화합물 반도체 소자의 제조방법 |
| JPH0883782A (ja) * | 1994-09-08 | 1996-03-26 | Nippondenso Co Ltd | 化合物半導体装置の製造方法 |
| MD930G2 (ro) * | 1997-04-09 | 1999-01-31 | Государственный Университет Молд0 | Procedeu de obţinere a straturilor de materiale semiconductoare din fază gazoasă |
| RU99117920A (ru) * | 1998-08-21 | 2001-07-20 | Асеа Браун Бовери АГ | Способ изготовления полупроводникового элемента и полупроводниковый элемент |
| MD2937C2 (ro) * | 2004-02-05 | 2006-09-30 | Производственно-Коммерческая Фирма "Discret Element" Ооо | Procedeu de curăţire a utilajului tehnologic de deşeuri după creşterea epitaxiala a straturilor semiconductoare de tipul A3B5 |
| CN1588612A (zh) * | 2004-07-09 | 2005-03-02 | 中国科学院上海微系统与信息技术研究所 | 磷化铟和砷化镓材料的直接键合方法 |
| MD3257G2 (ro) * | 2006-03-17 | 2007-09-30 | Производственно-Коммерческая Фирма "Discret Element" Ооо | Procedeu de recuperare a galiului şi arsenului din deşeul format după creşterea epitaxială a straturilor semiconductoare de tip A3B5 |
| RU2007106293A (ru) * | 2007-02-19 | 2008-08-27 | Открытое акционерное общество "Научно-исследовательский институт полупроводниковых приборов" (ОАО "НИИПП") (RU) | Способ изготовления полупроводникового диода |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| MD3815C2 (ro) * | 2007-07-04 | 2009-08-31 | Эдуард ПРОДАН | Sistem şi procedeu de alimentare cu apă |
| MD4182C1 (ro) * | 2011-04-15 | 2013-04-30 | Государственный Университет Молд0 | Dispozitiv semiconductor cu joncţiune p-n în relief (variante) |
| MD4261B1 (ro) * | 2011-05-12 | 2013-11-30 | Государственный Университет Молд0 | Procedeu de fabricare a dispozitivului semiconductor cu joncţiune p-n în relief (variante) |
| MD972Z (ro) * | 2015-02-19 | 2016-06-30 | Государственный Университет Молд0 | Procedeu de creştere a structurii p+InP-p-InP-n+CdS pentru celule fotovoltaice |
Also Published As
| Publication number | Publication date |
|---|---|
| MD176Y (ro) | 2010-03-31 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| KA4Y | Short-term patent lapsed due to non-payment of fees (with right of restoration) |