CN104795472B - 一种半导体发光器件的制备方法 - Google Patents
一种半导体发光器件的制备方法 Download PDFInfo
- Publication number
- CN104795472B CN104795472B CN201510126775.8A CN201510126775A CN104795472B CN 104795472 B CN104795472 B CN 104795472B CN 201510126775 A CN201510126775 A CN 201510126775A CN 104795472 B CN104795472 B CN 104795472B
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- China
- Prior art keywords
- etching
- preparation
- light emitting
- semiconductor device
- emitting semiconductor
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- 238000002360 preparation method Methods 0.000 title claims abstract description 18
- 239000004065 semiconductor Substances 0.000 title claims abstract description 17
- 238000000034 method Methods 0.000 claims abstract description 42
- 238000001312 dry etching Methods 0.000 claims abstract description 17
- 238000005530 etching Methods 0.000 claims abstract description 17
- 238000001039 wet etching Methods 0.000 claims abstract description 16
- 238000009966 trimming Methods 0.000 claims abstract description 10
- 239000000758 substrate Substances 0.000 claims description 30
- 229910052594 sapphire Inorganic materials 0.000 claims description 18
- 239000010980 sapphire Substances 0.000 claims description 18
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 12
- 230000007797 corrosion Effects 0.000 claims description 10
- 238000005260 corrosion Methods 0.000 claims description 10
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 6
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 5
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 4
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 4
- 230000008020 evaporation Effects 0.000 claims description 4
- 238000001704 evaporation Methods 0.000 claims description 4
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- 229910017604 nitric acid Inorganic materials 0.000 claims description 3
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 claims description 2
- 230000008878 coupling Effects 0.000 claims description 2
- 238000010168 coupling process Methods 0.000 claims description 2
- 238000005859 coupling reaction Methods 0.000 claims description 2
- 230000003628 erosive effect Effects 0.000 claims description 2
- 229910010272 inorganic material Inorganic materials 0.000 claims description 2
- 239000011147 inorganic material Substances 0.000 claims description 2
- 239000007788 liquid Substances 0.000 claims description 2
- 239000011368 organic material Substances 0.000 claims description 2
- 239000007769 metal material Substances 0.000 abstract description 3
- 239000012535 impurity Substances 0.000 abstract description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 235000011007 phosphoric acid Nutrition 0.000 description 4
- 239000003292 glue Substances 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 229910015844 BCl3 Inorganic materials 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 230000012010 growth Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 150000003016 phosphoric acids Chemical class 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 238000013517 stratification Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
Claims (6)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201510126775.8A CN104795472B (zh) | 2015-03-23 | 2015-03-23 | 一种半导体发光器件的制备方法 |
Applications Claiming Priority (1)
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CN201510126775.8A CN104795472B (zh) | 2015-03-23 | 2015-03-23 | 一种半导体发光器件的制备方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN104795472A CN104795472A (zh) | 2015-07-22 |
CN104795472B true CN104795472B (zh) | 2017-11-07 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201510126775.8A Active CN104795472B (zh) | 2015-03-23 | 2015-03-23 | 一种半导体发光器件的制备方法 |
Country Status (1)
Country | Link |
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CN (1) | CN104795472B (zh) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107946414B (zh) * | 2017-10-29 | 2019-06-11 | 广东省半导体产业技术研究院 | 一种基于干法刻蚀的悬挂式微器件结构转移方法 |
CN110021686A (zh) * | 2018-09-01 | 2019-07-16 | 东莞市中晶半导体科技有限公司 | 一种mini LED芯片的制备方法及外延垒晶晶片、芯片 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103560193A (zh) * | 2013-08-29 | 2014-02-05 | 南昌黄绿照明有限公司 | 低成本的垂直结构发光二极管芯片及其制备方法 |
CN103988321A (zh) * | 2011-12-27 | 2014-08-13 | 夏普株式会社 | 制造具有平坦表面的三维氮化镓结构的方法和使用具有平坦表面的三维氮化镓(GaN)柱状物结构的发光二极管(LED) |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3460096B2 (ja) * | 1994-05-30 | 2003-10-27 | 富士通株式会社 | 半導体装置の製造方法 |
JP4947954B2 (ja) * | 2005-10-31 | 2012-06-06 | スタンレー電気株式会社 | 発光素子 |
JP4899747B2 (ja) * | 2006-09-25 | 2012-03-21 | 凸版印刷株式会社 | パターニング方法 |
JP2011124311A (ja) * | 2009-12-09 | 2011-06-23 | Toshiba Corp | 半導体発光素子の製造方法および積層構造体 |
-
2015
- 2015-03-23 CN CN201510126775.8A patent/CN104795472B/zh active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103988321A (zh) * | 2011-12-27 | 2014-08-13 | 夏普株式会社 | 制造具有平坦表面的三维氮化镓结构的方法和使用具有平坦表面的三维氮化镓(GaN)柱状物结构的发光二极管(LED) |
CN103560193A (zh) * | 2013-08-29 | 2014-02-05 | 南昌黄绿照明有限公司 | 低成本的垂直结构发光二极管芯片及其制备方法 |
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Publication number | Publication date |
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CN104795472A (zh) | 2015-07-22 |
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C06 | Publication | ||
PB01 | Publication | ||
EXSB | Decision made by sipo to initiate substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20180511 Address after: 330096 energy saving Jiangxi low carbon Park 7-1, No. 699 Tianxiang Avenue, Nanchang hi tech Industrial Development Zone, Nanchang, Jiangxi. Patentee after: Nanchang Yimei Photoelectric Technology Co. Ltd. Address before: 100176 Beijing Daxing District Yizhuang economic and Technological Development Zone, Chuang Chuang fourteen Street 99 Huilong Sen science and Technology Park 2 Building 4 floor. Patentee before: Shineon (Beijing) Technology Co., Ltd. |
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PE01 | Entry into force of the registration of the contract for pledge of patent right | ||
PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of invention: A preparation method of semiconductor light emitting device Effective date of registration: 20201116 Granted publication date: 20171107 Pledgee: Bank of Communications Ltd. Jiangxi branch Pledgor: NANCHANG YIMEI OPTOELECTRONICS TECHNOLOGY Co.,Ltd. Registration number: Y2020360000092 |