MD673G2 - Process for InP layers production - Google Patents
Process for InP layers productionInfo
- Publication number
- MD673G2 MD673G2 MD94-0147A MD940147A MD673G2 MD 673 G2 MD673 G2 MD 673G2 MD 940147 A MD940147 A MD 940147A MD 673 G2 MD673 G2 MD 673G2
- Authority
- MD
- Moldova
- Prior art keywords
- layers
- indium source
- inp
- preliminary
- inp layers
- Prior art date
Links
Landscapes
- Recrystallisation Techniques (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention relates to the semiconductors technology and may be applied for the InP thin pure layers production with the high reproducible electrophisical parameters.The proposed process consists in the preliminary thermic treatment of the indium source and the epitaxial growth of the layers in the In-PCl3-H2 system, the indium source preliminary thermic treatment being effected in void (vacuum).The technical result of the invention consists in the purification of the indium source out of the uncontrolled impurities and the reducing of the term for establishing the conditions of the InP layers development.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
MD94-0147A MD673G2 (en) | 1994-05-24 | 1994-05-24 | Process for InP layers production |
RU94040462/25A RU94040462A (en) | 1994-05-24 | 1994-11-04 | Method for producing inp layers |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
MD94-0147A MD673G2 (en) | 1994-05-24 | 1994-05-24 | Process for InP layers production |
Publications (3)
Publication Number | Publication Date |
---|---|
MD673F2 MD673F2 (en) | 1995-11-30 |
MD940147A MD940147A (en) | 1995-11-30 |
MD673G2 true MD673G2 (en) | 1997-08-31 |
Family
ID=19738543
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
MD94-0147A MD673G2 (en) | 1994-05-24 | 1994-05-24 | Process for InP layers production |
Country Status (2)
Country | Link |
---|---|
MD (1) | MD673G2 (en) |
RU (1) | RU94040462A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
MD151Z (en) * | 2008-12-30 | 2010-09-30 | Государственный Университет Молд0 | Process for growth of GaAs epitaxial layers into a horizontal reactor |
MD4510C1 (en) * | 2016-06-23 | 2018-03-31 | Государственный Университет Молд0 | Method for growth of n+-p-p+ InP structure for solar cells |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
MD4280C1 (en) * | 2013-09-04 | 2014-10-31 | Государственный Университет Молд0 | pInP-nCdS structure growth method |
-
1994
- 1994-05-24 MD MD94-0147A patent/MD673G2/en active IP Right Grant
- 1994-11-04 RU RU94040462/25A patent/RU94040462A/en unknown
Non-Patent Citations (2)
Title |
---|
R.D.Fairman, M.Omozi, E.B.Fank. Recent progress in the control of high-purity VPE by the PCl3-In-H2 technology. The 6th Symp. on GaAs and related compounds. London. 1977, p. 45-54. * |
Обзоры по электронной технике. Серия 2. Полупроводниковые приборы. вып.3, 1983 г., М., Т.М.Колмакова, Г.Ф.Лымарь. "Выращивание эпитаксиальных слоев фосфида индия в системе In-PCl3-H2 для полевых транзисторов". * |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
MD151Z (en) * | 2008-12-30 | 2010-09-30 | Государственный Университет Молд0 | Process for growth of GaAs epitaxial layers into a horizontal reactor |
MD4510C1 (en) * | 2016-06-23 | 2018-03-31 | Государственный Университет Молд0 | Method for growth of n+-p-p+ InP structure for solar cells |
Also Published As
Publication number | Publication date |
---|---|
MD673F2 (en) | 1995-11-30 |
RU94040462A (en) | 1996-09-27 |
MD940147A (en) | 1995-11-30 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
FG3A | Granted patent for invention | ||
IF99 | Valid patent on 19990615 |
Free format text: EXPIRES: 20140524 |