MD673G2 - Process for InP layers production - Google Patents

Process for InP layers production

Info

Publication number
MD673G2
MD673G2 MD94-0147A MD940147A MD673G2 MD 673 G2 MD673 G2 MD 673G2 MD 940147 A MD940147 A MD 940147A MD 673 G2 MD673 G2 MD 673G2
Authority
MD
Moldova
Prior art keywords
layers
indium source
inp
preliminary
inp layers
Prior art date
Application number
MD94-0147A
Other languages
Romanian (ro)
Russian (ru)
Other versions
MD940147A (en
MD673F2 (en
Inventor
Vasile Botnariuc
Ion Diaconu
Леонид ГОРЧАК
Симион РАЕВСКИЙ
Valentin Plesca
Original Assignee
Государственный Университет Молд0
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Государственный Университет Молд0 filed Critical Государственный Университет Молд0
Priority to MD94-0147A priority Critical patent/MD673G2/en
Priority to RU94040462/25A priority patent/RU94040462A/en
Publication of MD940147A publication Critical patent/MD940147A/en
Publication of MD673F2 publication Critical patent/MD673F2/en
Publication of MD673G2 publication Critical patent/MD673G2/en

Links

Landscapes

  • Recrystallisation Techniques (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

The invention relates to the semiconductors technology and may be applied for the InP thin pure layers production with the high reproducible electrophisical parameters.The proposed process consists in the preliminary thermic treatment of the indium source and the epitaxial growth of the layers in the In-PCl3-H2 system, the indium source preliminary thermic treatment being effected in void (vacuum).The technical result of the invention consists in the purification of the indium source out of the uncontrolled impurities and the reducing of the term for establishing the conditions of the InP layers development.
MD94-0147A 1994-05-24 1994-05-24 Process for InP layers production MD673G2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
MD94-0147A MD673G2 (en) 1994-05-24 1994-05-24 Process for InP layers production
RU94040462/25A RU94040462A (en) 1994-05-24 1994-11-04 Method for producing inp layers

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
MD94-0147A MD673G2 (en) 1994-05-24 1994-05-24 Process for InP layers production

Publications (3)

Publication Number Publication Date
MD940147A MD940147A (en) 1995-11-30
MD673F2 MD673F2 (en) 1995-11-30
MD673G2 true MD673G2 (en) 1997-08-31

Family

ID=19738543

Family Applications (1)

Application Number Title Priority Date Filing Date
MD94-0147A MD673G2 (en) 1994-05-24 1994-05-24 Process for InP layers production

Country Status (2)

Country Link
MD (1) MD673G2 (en)
RU (1) RU94040462A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MD151Z (en) * 2008-12-30 2010-09-30 Государственный Университет Молд0 Process for growth of GaAs epitaxial layers into a horizontal reactor
MD4510C1 (en) * 2016-06-23 2018-03-31 Государственный Университет Молд0 Method for growth of n+-p-p+ InP structure for solar cells

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MD4280C1 (en) * 2013-09-04 2014-10-31 Государственный Университет Молд0 pInP-nCdS structure growth method

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
R.D.Fairman, M.Omozi, E.B.Fank. Recent progress in the control of high-purity VPE by the PCl3-In-H2 technology. The 6th Symp. on GaAs and related compounds. London. 1977, p. 45-54. *
Обзоры по электронной технике. Серия 2. Полупроводниковые приборы. вып.3, 1983 г., М., Т.М.Колмакова, Г.Ф.Лымарь. "Выращивание эпитаксиальных слоев фосфида индия в системе In-PCl3-H2 для полевых транзисторов". *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MD151Z (en) * 2008-12-30 2010-09-30 Государственный Университет Молд0 Process for growth of GaAs epitaxial layers into a horizontal reactor
MD4510C1 (en) * 2016-06-23 2018-03-31 Государственный Университет Молд0 Method for growth of n+-p-p+ InP structure for solar cells

Also Published As

Publication number Publication date
MD940147A (en) 1995-11-30
RU94040462A (en) 1996-09-27
MD673F2 (en) 1995-11-30

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Legal Events

Date Code Title Description
FG3A Granted patent for invention
IF99 Valid patent on 19990615

Free format text: EXPIRES: 20140524