MY116855A - Argon recovery from silicon crystal furnace - Google Patents

Argon recovery from silicon crystal furnace

Info

Publication number
MY116855A
MY116855A MYPI97000701A MYPI9700701A MY116855A MY 116855 A MY116855 A MY 116855A MY PI97000701 A MYPI97000701 A MY PI97000701A MY PI9700701 A MYPI9700701 A MY PI9700701A MY 116855 A MY116855 A MY 116855A
Authority
MY
Malaysia
Prior art keywords
silicon crystal
crystal furnace
argon recovery
adsorption
embodiment uses
Prior art date
Application number
MYPI97000701A
Inventor
Thomas Hsiao-Ling Hsiung
Zbigniew Tadeusz Fidkowski
Rakesh Agrawal
Original Assignee
Air Prod & Chem
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US08/785,515 external-priority patent/US5706674A/en
Application filed by Air Prod & Chem filed Critical Air Prod & Chem
Publication of MY116855A publication Critical patent/MY116855A/en

Links

Classifications

    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F25—REFRIGERATION OR COOLING; COMBINED HEATING AND REFRIGERATION SYSTEMS; HEAT PUMP SYSTEMS; MANUFACTURE OR STORAGE OF ICE; LIQUEFACTION SOLIDIFICATION OF GASES
    • F25J—LIQUEFACTION, SOLIDIFICATION OR SEPARATION OF GASES OR GASEOUS OR LIQUEFIED GASEOUS MIXTURES BY PRESSURE AND COLD TREATMENT OR BY BRINGING THEM INTO THE SUPERCRITICAL STATE
    • F25J3/00—Processes or apparatus for separating the constituents of gaseous or liquefied gaseous mixtures involving the use of liquefaction or solidification
    • F25J3/08—Separating gaseous impurities from gases or gaseous mixtures or from liquefied gases or liquefied gaseous mixtures
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B23/00—Noble gases; Compounds thereof
    • C01B23/001—Purification or separation processes of noble gases
    • C01B23/0094—Combined chemical and physical processing
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B2210/00—Purification or separation of specific gases
    • C01B2210/0001—Separation or purification processing
    • C01B2210/0003—Chemical processing
    • C01B2210/0004—Chemical processing by oxidation
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B2210/00—Purification or separation of specific gases
    • C01B2210/0001—Separation or purification processing
    • C01B2210/0003—Chemical processing
    • C01B2210/0006—Chemical processing by reduction
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B2210/00—Purification or separation of specific gases
    • C01B2210/0001—Separation or purification processing
    • C01B2210/0009—Physical processing
    • C01B2210/0014—Physical processing by adsorption in solids
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B2210/00—Purification or separation of specific gases
    • C01B2210/0043—Impurity removed
    • C01B2210/0045—Oxygen
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B2210/00—Purification or separation of specific gases
    • C01B2210/0043—Impurity removed
    • C01B2210/005—Carbon monoxide
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F25—REFRIGERATION OR COOLING; COMBINED HEATING AND REFRIGERATION SYSTEMS; HEAT PUMP SYSTEMS; MANUFACTURE OR STORAGE OF ICE; LIQUEFACTION SOLIDIFICATION OF GASES
    • F25J—LIQUEFACTION, SOLIDIFICATION OR SEPARATION OF GASES OR GASEOUS OR LIQUEFIED GASEOUS MIXTURES BY PRESSURE AND COLD TREATMENT OR BY BRINGING THEM INTO THE SUPERCRITICAL STATE
    • F25J2200/00—Processes or apparatus using separation by rectification
    • F25J2200/04—Processes or apparatus using separation by rectification in a dual pressure main column system
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F25—REFRIGERATION OR COOLING; COMBINED HEATING AND REFRIGERATION SYSTEMS; HEAT PUMP SYSTEMS; MANUFACTURE OR STORAGE OF ICE; LIQUEFACTION SOLIDIFICATION OF GASES
    • F25J—LIQUEFACTION, SOLIDIFICATION OR SEPARATION OF GASES OR GASEOUS OR LIQUEFIED GASEOUS MIXTURES BY PRESSURE AND COLD TREATMENT OR BY BRINGING THEM INTO THE SUPERCRITICAL STATE
    • F25J2200/00—Processes or apparatus using separation by rectification
    • F25J2200/72—Refluxing the column with at least a part of the totally condensed overhead gas
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F25—REFRIGERATION OR COOLING; COMBINED HEATING AND REFRIGERATION SYSTEMS; HEAT PUMP SYSTEMS; MANUFACTURE OR STORAGE OF ICE; LIQUEFACTION SOLIDIFICATION OF GASES
    • F25J—LIQUEFACTION, SOLIDIFICATION OR SEPARATION OF GASES OR GASEOUS OR LIQUEFIED GASEOUS MIXTURES BY PRESSURE AND COLD TREATMENT OR BY BRINGING THEM INTO THE SUPERCRITICAL STATE
    • F25J2215/00—Processes characterised by the type or other details of the product stream
    • F25J2215/58—Argon
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F25—REFRIGERATION OR COOLING; COMBINED HEATING AND REFRIGERATION SYSTEMS; HEAT PUMP SYSTEMS; MANUFACTURE OR STORAGE OF ICE; LIQUEFACTION SOLIDIFICATION OF GASES
    • F25J—LIQUEFACTION, SOLIDIFICATION OR SEPARATION OF GASES OR GASEOUS OR LIQUEFIED GASEOUS MIXTURES BY PRESSURE AND COLD TREATMENT OR BY BRINGING THEM INTO THE SUPERCRITICAL STATE
    • F25J2270/00—Refrigeration techniques used
    • F25J2270/02—Internal refrigeration with liquid vaporising loop

Abstract

THE PRESENT INVENTION IS DIRECTED TO TWO EMBODIMENTS OF A PROCESS FOR RECYCLING AN IMPURE ARGON EFFLUENT FROM A SILICON CRYSTAL GROWING FURNACE(18) USING CRYOGENICS. THE FIRST EMBODIMENT USES CRYOGENIC DISTILLATION TECHNIQUES, AND THE SECOND EMBODIMENT USES CRYOGENIC ADSORPTION, BOTH OF WHICH USE CATALYTIC TREATMENTS AND ADSORPTION IN CONJUNCTION WITH THEIR CRYOGENIC PROCESS STEPS TO PROVIDE A PURE ARGON RECYCLE STREAM FOR A SILICON CRYSTAL GROWTH FURNACE(18). (FIG.1)
MYPI97000701A 1996-02-28 1997-02-24 Argon recovery from silicon crystal furnace MY116855A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US1243996P 1996-02-28 1996-02-28
US08/785,515 US5706674A (en) 1997-01-17 1997-01-17 Argon recovery from silicon crystal furnace

Publications (1)

Publication Number Publication Date
MY116855A true MY116855A (en) 2004-04-30

Family

ID=26683562

Family Applications (1)

Application Number Title Priority Date Filing Date
MYPI97000701A MY116855A (en) 1996-02-28 1997-02-24 Argon recovery from silicon crystal furnace

Country Status (5)

Country Link
JP (1) JP3092101B2 (en)
KR (1) KR100199883B1 (en)
DE (1) DE19708025A1 (en)
IT (1) IT1289983B1 (en)
MY (1) MY116855A (en)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100402429B1 (en) * 1998-07-07 2003-10-22 닛폰산소 가부시키가이샤 Apparatus for producing highly clean dry air
JP2000024444A (en) * 1998-07-07 2000-01-25 Nippon Sanso Kk Production of highly purified dry air and device therefor
JP4519954B2 (en) * 1998-07-07 2010-08-04 大陽日酸株式会社 Highly clean dry air and method and apparatus for producing dry air
JP3572548B2 (en) 2002-05-24 2004-10-06 日本酸素株式会社 Gas purification method and apparatus
KR20020096026A (en) * 2002-10-16 2002-12-28 장성진 Method and apparatus for producing basic or inert gases of a high degree of purity
US7862645B2 (en) * 2008-02-01 2011-01-04 Air Products And Chemicals, Inc. Removal of gaseous contaminants from argon
DE102009003350C5 (en) 2009-01-14 2017-02-09 Reicat Gmbh Process and apparatus for separating argon from a gas mixture
JP5321401B2 (en) 2009-08-06 2013-10-23 信越半導体株式会社 Inert gas recovery equipment for silicon oxide removal equipment and silicon single crystal production equipment
KR101151272B1 (en) * 2009-09-09 2012-06-14 박현진 The manufacture device for producing high-purity silcon
DE102009044249B3 (en) * 2009-10-14 2011-06-30 ReiCat GmbH, 63571 Process and apparatus for separating argon from a gas mixture
GB2477322B (en) * 2010-02-01 2015-10-21 Gas Recovery & Recycle Ltd Inert gas recovery system
TWI476038B (en) * 2010-02-10 2015-03-11 Sumitomo Seika Chemicals Purifying method and purifying apparatus for argon gas
JP5403685B2 (en) * 2010-02-25 2014-01-29 住友精化株式会社 Argon gas purification method and purification apparatus
TWI478761B (en) * 2010-02-25 2015-04-01 Sumitomo Seika Chemicals Purifying method and purifying apparatus for argon gas
DE102011050247B4 (en) * 2011-05-10 2019-02-21 Reicat Gmbh Process and apparatus for separating argon from a gas mixture
US20140165648A1 (en) * 2012-12-18 2014-06-19 Air Liquide Process & Construction, Inc. Purification of inert gases to remove trace impurities
WO2015094175A1 (en) * 2013-12-17 2015-06-25 L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Purification of inert gases to remove trace impurities
CN105139897B (en) * 2015-07-23 2017-08-11 清华大学 A kind of extensive system for continuously preparing coated particle
CN106288653A (en) * 2016-10-21 2017-01-04 上海跃绅能源科技有限公司 A kind of single column cryogenic rectification reclaims device and the method for purification recovery argon of argon
DE102018122312A1 (en) * 2018-09-12 2020-03-12 Air Liquide Deutschland Gmbh Arrangement and method for providing a gas such as an atomizing gas to produce a powder at a place of use
CN110608367A (en) * 2019-09-30 2019-12-24 苏州苏净保护气氛有限公司 Argon recycling system and method
CN111634896B (en) * 2020-05-19 2023-03-21 北京北大先锋科技有限公司 Argon purification and recovery method and system

Also Published As

Publication number Publication date
IT1289983B1 (en) 1998-10-19
KR100199883B1 (en) 1999-06-15
JPH107410A (en) 1998-01-13
ITMI970422A1 (en) 1998-08-26
JP3092101B2 (en) 2000-09-25
KR19980068982A (en) 1998-10-26
DE19708025A1 (en) 1997-09-04

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