KR101151272B1 - The manufacture device for producing high-purity silcon - Google Patents

Abstract

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a high purity polycrystalline silicon manufacturing apparatus used as a raw material of silicon for semiconductors or as a raw material of silicon for solar cells.

The high purity polycrystalline silicon production apparatus of the present invention comprises: an iodide gas generating device for heating solid iodine to produce iodide gas; A silicon iodide gas generating device which generates the silicon iodide gas by reacting the iodide gas with a first metal silicon; A silicon iodide liquid generating device for producing the silicon iodide gas as a silicon iodide liquid; A refining apparatus for separating and purifying impurities contained in the silicon iodide liquid to produce purified silicon iodide liquid; And a silicon precipitation device for depositing high purity polysilicon by sequentially reacting the silicon tetraiodide liquid with the second metal silicon and the silicon seed.

The present invention takes the form of a compound that maintains a solid state at room temperature, which is easy to handle, minimizes the damage of toxicity to the outside and the human body, and is a high purity polycrystal that can be used in electronic grade through a repeated production process. Silicon is provided.

Silicon, Photovoltaic, Solar Cells, Polysilicon, Siemens

Description

High purity polycrystalline silicon manufacturing equipment {THE MANUFACTURE DEVICE FOR PRODUCING HIGH-PURITY SILCON}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a high purity polycrystalline silicon manufacturing apparatus used as a raw material of silicon for semiconductors or as a raw material of silicon for solar cells.

As the use of green energy expands, the demand for high-purity silicon used as a raw material for solar cells is increasing along with amplification of interest in solar energy.

However, the production of high purity silicon, which is the raw material of solar cells, requires a complicated method and a high degree of vacuum system, and the cost of treating harmful by-products is not disclosed.

The solar cell market has been produced by monosilane (SiH₄) produced by adding chlorine substitution process using TCS (SiHCl₃), STC (SiCl₄) or H hydrogen using chlorine to MG silicon. There have been many problems such as dangerous substances (strong corrosion and explosive polymer production) according to chemical properties, and there have been many studies because of the difficulty in immediately identifying and removing hazards as they exist in gaseous state when leaking.

Recently, in order to solve these problems, effective methods such as purification by dissolution of metal grade silicon and purification of metal grade silicon by recrystallization through directional solidification have been improved, but the prospects are not bright.

Korean Patent Laid-Open Publication No. 10-2008-0068735 is provided with a direct electromagnetic induction heating means having a function of directly inducing heating the molten silicon in the crucible outside the outer wall surface of the crucible, the crucible being at least a direct electromagnetic induction heating means. A high purity silicon manufacturing apparatus is disclosed in which a region where molten silicon is in contact with a crucible inner wall surface at the time of non-energization is made of an oxidation resistant material.

Korean Patent Laid-Open Publication No. 10-2008-0085716 discloses a vaporizer of silicon chloride, a melt evaporator of zinc, a vertical reactor with heating means on its outer surface, a vaporizer of silicon chloride and a reactor connected to the vertical reactor, A silicon chloride gas supply nozzle for supplying silicon chloride gas into the vertical reactor, a zinc gas supply nozzle arranged to connect between the molten evaporator of zinc and the vertical reactor and supplying the zinc gas supplied from the molten evaporator of zinc into the vertical reactor, and the vertical type An exhaust gas discharge pipe connected to the reactor, and the zinc melt evaporator is an evaporator, a main tube connected to the upper part of the evaporator, a solid separation pipe inserted inside the main bell tube, a zinc introduction pipe connected obliquely to the solid separation pipe. Opening of solid separation pipe Arranged to surround the pipe and the bottom of the solids separation

The manufacturing apparatus and manufacturing method of high purity polysilicon are composed of a seal port constituting the surface, an induction heating device mounted on the outer circumferential surface of the main slave tube and adjustable in temperature, and a gas discharge pipe connected to the side wall of the evaporator. have.

However, the conventional silicon manufacturing apparatus as described above requires many recycling processes and a long handling time, and has a problem of cost efficiency.

An object of the present invention is to solve such a problem, taking the form of a compound that maintains a solid state at room temperature, easy to handle and minimize the damage of toxic effects on the outside and the human body, and also through a repeated production process To provide a high purity polycrystalline silicon that can be used in electronic grade.

The high purity silicon production apparatus of the present invention for achieving the above object is an iodide gas generating device for heating the solid iodine introduced from the outside to generate the iodide gas; A silicon iodide generating device for producing silicon tetraiodide by reacting the iodide gas transferred from the iodide gas generating device with the heating first metal silicon; A silicon iodide liquid generating device for producing a silicon iodide liquid by lowering the temperature of the silicon iodide gas transported from the silicon iodide gas generating device; heating the silicon iodide liquid transferred from the silicon iodide liquid generating device A purifying apparatus for separating and purifying impurities in a vapor state after gasification and cooling and cooling the purified silicon iodide liquid; The purified silicon iodide liquid transferred from the refining apparatus is heated and gasified, and then reacted with a second metal silicon of the same raw material as the first metal silicon being heated to produce a silicon iodide gas, and the produced silicon iodide gas. And a silicon precipitation device for reacting with the heating silicon seed to precipitate high purity polycrystalline silicon.

The apparatus for generating an iodide gas includes a first reactor for heating solid iodine introduced from an iodine inlet with a first heater to generate an iodide gas, a first vacuum pump line for adjusting an air pressure of the first reactor, and a first vacuum pump line. The first argon gas injection line for injecting argon gas into the reactor.

The silicon iodide gas generator is a second reaction that generates silicon iodide gas by heating the first metal silicon introduced from the first metal silicon inlet with a second heater and reacting with the iodide gas transferred from the iodide gas generator. The furnace, a second vacuum pump line for adjusting the air pressure of the second reactor, and a second argon gas injection line for injecting argon gas into the second reactor.

The silicon iodide liquid generator comprises a metal silicon separator, an iodine impurity separator, and an iodine gas separator, wherein the silicon iodide gas transferred from the silicon iodide gas generator is a metal silicon separator, an iodine impurity separator, and an iodine gas separator. The temperature is gradually lowered to pass through to generate the iodide gas and the silicon iodide liquid, and the iodide gas is made to be recovered to the iodide gas generating device.

The purification apparatus includes a third reactor and a distillation column, and the third reactor is a third heater for gasifying the silicon iodide liquid transferred from the silicon iodide liquid generating device, and an agent for adjusting the air pressure in the third reactor. It consists of a three vacuum pump line, and a third argon gas injection line for injecting argon gas into the third reactor, the distillation column is classified as pure iodine in the gas containing silicon iodide gas transferred from the third reactor. After that, it is classified into a first collection passage for collecting and boron iodide, and then classified into a second collection passage for collecting and silicon iodide, and then classified into a third collecting passage for collecting and carbon iodide, and then collected. And a fourth collector for sorting, and a fifth collector for sorting after being classified into aluminum iodide.

In addition, it is preferable that the purification apparatus further includes a waste treatment apparatus for recycling the iodide impurities generated during the purification process.

In addition, the waste treatment apparatus comprises a solid oxidation furnace and a liquid oxidation furnace, a solid state oxidation furnace, a silica mixer for mixing and injecting iodide impurities and silica, and a first oxygen heating torch for heating the iodide impurities mixed with silica. And a first iodine gas collector configured to collect and recover iodine generated during the oxidation process in a gasified state, and a first waste collector configured to collect solid waste generated after oxidation. A second oxygen heating torch for heating the liquid waste which has not been treated as a solid waste in the oxidation furnace, a second iodine gas collector which collects and recovers the iodine generated during the oxidation process in a gasified state, and after oxidation, A second waste collector that collects the liquid wastes generated.

In addition, the distillation column is provided with a temperature-controlled cooling device in the first collector, the second collector, the third collector, the fourth collector, and the fifth collector, respectively, to be discharged in a liquid state.

In addition, the distillation column is to be made to recover the pure iodine collected in the first collector to the iodide gas generating device.

The silicon precipitation device is composed of a fourth reactor, a fifth reactor, and a sixth reactor, and the fourth reactor is for gasifying the silicon iodide liquid transferred from the third collection vessel sorted by the refining apparatus. The fourth heater, the fourth vacuum pump line for adjusting the air pressure of the fourth reactor, and the fourth argon gas injection line for injecting argon gas into the fourth reactor, the fifth reactor fourth reaction A fifth heater for heating the second metal silicon introduced from the second metal silicon inlet to produce the silicon iodide gas transferred from the furnace as silicon iodide gas, and a fifth vacuum pump line for adjusting the air pressure of the fifth reactor. And a fifth argon gas injection line for injecting argon gas into the fifth reactor, and the sixth reactor introduces silicon seed to generate high purity polycrystalline silicon iodide silicon gas transported from the fifth reactor. The sixth heater for heating the silicon seed introduced from the sphere, the sixth vacuum pump line for adjusting the air pressure of the sixth reactor, and the sixth argon gas injection line for injecting argon gas into the sixth reactor do.

In addition, the silicon deposition device is a solid liquid separator to recover the silicon iodide gas generated during the reaction between the silicon iodide and silicon seed in the sixth reactor to the purification device.

In addition, the purification device is to be further installed to produce a high-purity product.

The present invention by the above solution can reduce the expensive raw material cost by extracting and recovering the pure iodine from the solid and liquid iodine compound of the impure waste target generated in the production process, it can be used in electronic grade through the repetition of the purification process High purity products can be obtained, and it is easy to handle by taking the form of a compound that maintains a solid state rather than a gas state at room temperature. It can be.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

1 is a process diagram of a high-purity polysilicon production apparatus of the present invention, Figure 2 is a detailed view of the iodide gas generating device of the high-purity polysilicon production apparatus of the present invention, Figure 3 is a 4 iodide silicon gas of the high-purity polysilicon production apparatus of the present invention 4 is a detailed view of the silicon iodide liquid generating device, Figure 4 is a detailed view of the purification apparatus of the high purity polysilicon production apparatus of the present invention, Figure 5 is a detailed view of the silicon precipitation apparatus of the high purity polycrystalline silicon production apparatus of the present invention, Figure 6 is a present invention A detailed view of the waste treatment apparatus of the high purity polysilicon manufacturing apparatus.

As shown in the figure, the high purity polysilicon production apparatus of the present invention is an iodide gas generating device 100, a silicon iodide gas generating device 200, a silicon iodide liquid generating device 300, and a purification device 400 ) And a silicon precipitation device 600.

The iodide gas generating apparatus 100 is heated by maintaining the iodine 111 of the solid introduced from the iodine inlet 110 to the first heater 114 while maintaining a temperature of 200 ° C or more than the vaporization temperature of iodine to the iodide gas 115 A first argon for injecting argon gas into the first reactor 117 to be produced, the first vacuum pump line 120 for adjusting the air pressure of the first reactor 117, and the first reactor 117. It is made of a gas injection line 140.

The iodide gas 115 discharged from the iodide gas generating apparatus 100 is preferably made to be recovered after one cycle.

The silicon iodide gas generator 200 heats the first metal silicon 211 introduced from the first metal silicon inlet 210 to a second heater 214 to less than 600 ° C. to 1000 ° C. under atmospheric pressure, A second reactor 217 for reacting with the iodide gas 115 transported from the iodide gas generating device 100 to produce the silicon iodide gas 215, and an air pressure regulating the air pressure of the second reactor 217. The second vacuum pump line 220, and the second argon gas injection line 240 for injecting argon gas into the second reactor (217).

At this time, the silicon iodide gas 215 is generated as follows.

Si + 2I₂ → SiI₄

In addition, the silicon iodide gas 215 is stable to strong heat and can be stored for a long time at room temperature, but reacts quickly with water as follows, so that it is always kept dry when handling in air.

SiI₄ + 2H₂O → SiO₂ + 4HI

In addition, the ratio of the iodide gas 115 and the first metal silicon 211 always causes the metal silicon 211 to react in a state in which the iodide gas 115 exceeds 2 times or more.

In addition, the silicon dioxide iodide gas discharge pipe 215a is provided at the upper portion of the second reactor 217 so that the silicon iodide gas 215 is discharged.

The silicon iodide liquid generator 300 includes a metal silicon separator 310, an iodine impurity separator 320, and an iodine gas separator 330.

The metal silicon separator 310 serves to separate the unreacted first metal silicon 211 contained in the silicon iodide gas 215 transferred from the silicon iodide gas generator 200.

The iodine impurity separator 320 serves to separate the iodide impurities contained in the silicon iodide gas 215 transferred from the silicon iodide gas generator 200.

The iodide gas separator 330 serves to separate the unreacted iodide gas 115 included in the silicon iodide gas 215 transferred from the silicon iodide gas generator 200.

As such, the silicon iodide liquid generating device 300 is a silicon iodide gas 215 transferred from the silicon iodide gas generator 200, the metal silicon separator 310, the iodine impurity separator 320, and iodine The gas separator 370 is sequentially passed and the temperature is gradually lowered to generate the iodide gas 115 and the silicon iodide liquid 315, and the iodide gas 115 is recovered to the iodide gas generating device 100. do.

That is, the silicon iodide gas 215 transferred from the silicon iodide gas generator 200 passes through the silicon iodide liquid generator 300 to maintain 190 ° C. to 210 ° C., which is a temperature at which all iodide is liquefied. To generate the silicon iodide liquid 315, which is then transferred to the next process.

The purification device 400 is composed of a third reactor 417 and a distillation tower 437,

The third reactor 417 is a third heater 414 for heating and gasifying the silicon iodide liquid 315 transferred from the silicon iodide liquid generator 300 to 290 ° C to 320 ° C, and a third reaction. The third vacuum pump line 420 for adjusting the air pressure of the furnace 417 and the third argon gas injection line 440 for injecting argon gas into the third reactor 417.

The distillation column 437 is classified into pure iodine 111 in a gas containing silicon iodide gas 215 transferred from the third reactor 417, and then collected into a first collection container 450 for collecting. After dividing into boron iodide, the second collecting container 460 for collecting, and after dividing into four silicon iodide, the third collecting container 470 for collecting and carbon iodide, and then collecting After being classified into four collection vessels 480 and aluminum iodide, the fifth collection vessel 490 is provided for collection.

The distillation column 437 is iodine 140 ~ 150 ℃, boron iodide 190 ~ 205 ℃, silicon iodide 220 ~ 270 ℃, carbon iodide 290 ~ 310 ℃, aluminum iodide 310 ~ 320 to separate the iodide according to the heating temperature Change the heating temperature to ℃.

At this time, it is preferable that the waste treatment apparatus 500 is further installed to recycle the iodide impurities generated in the purification apparatus 400.

The waste treatment apparatus 500 includes a solid oxidation furnace 510 and a liquid oxidation furnace 530.

The solid oxidation furnace 510 is a silica mixer 513 for mixing and mixing the iodide impurities and silica, the first oxygen for heating the iodide impurities mixed with silica and the hot torch 515, and generated during the oxidation process The first iodine gas collector 517 to collect and recover the iodine 111 to be gasified, and the first waste collector 519 to collect solid waste generated after oxidation.

At this time, the solid oxidation furnace 510 is preferably to be heated to 1000 ℃.

The liquid oxidation furnace 530 uses a second oxygen heating torch 535 for heating the untreated liquid waste into a solid waste in the solid oxidation furnace 510, and the iodine 111 generated in the oxidation process. A second iodine gas collector 537 for collecting and recovering gaseous state, and a second waste collector 539 for collecting liquid waste generated after oxidation.

The waste treatment apparatus 500 of the above method may be disposed by solidifying with a stable oxide at 200-700 ° C., which is equal to or higher than the solidification point of the iodine 111, and the iodine 111 may have a melting point of 113.7 ° C. or more, a vaporization point. Phosphorus 184.3 ℃ or less is to be liquefied at an appropriate temperature to be recycled through the iodide gas generating apparatus 100.

 The silicon precipitation apparatus 600 includes a fourth reactor 610, a fifth reactor 630, and a sixth reactor 650.

The fourth reactor 610 is a fourth heater 614 for gasifying the silicon iodide liquid 315 transferred from the third collection container 470 sorted by the refining apparatus 400 to 320 ° C, The fourth vacuum pump line 617 for adjusting the air pressure of the fourth reactor 600, and the fourth argon gas injection line 619 for injecting argon gas into the fourth reactor 600,

The fifth reactor 630 is injected from the second metal silicon inlet 633 to generate the silicon iodide gas 215 transferred from the fourth reactor 610 as the silicon iodide dioxide 635 in a supersaturated state. The fifth heater 634 for heating the second metal silicon 631 to 1100 ~ 1250 ° C, the fifth vacuum pump line 637 for adjusting the atmospheric pressure of the fifth reactor 630, and the fifth reactor. It consists of a fifth argon gas injection line 639 for injecting argon gas,

The sixth reactor 650 is a silicon seed 655 introduced from the silicon seed 653 inlet to produce the supersaturated silicon iodide gas 635 of high purity polycrystalline silicon transferred from the fifth reactor 630. Injecting argon gas into the sixth heater 654 heated to 800 to 1000 ° C., the sixth vacuum pump line 657 to control the atmospheric pressure of the sixth reactor 650, and the sixth reactor 650. To be made of a sixth argon gas injection line (659).

At this time, the reaction of the fifth reactor 630 and the sixth reactor 650 is as follows.

SiI₄ + Si → 2SiI₂ (1200 ℃)

2SiI₂ → Si + SiI₄ (800 ~ 1000 ℃)

In addition, a solid liquid separator 670 for recovering the silicon tetraiodide gas 215 generated during the reaction between the silicon iodide gas 635 and the silicon seed 653 in the sixth reactor 650 to a purification apparatus is further provided. To be installed.

That is, the silicon deposition is continuously made by the silicon deposition apparatus 600 as described above, and high purity polycrystalline silicon is deposited.

In addition, it is preferable that the purification device 400a be further installed in the purification device 400 to obtain better high purity polycrystalline silicon.

As such, the present invention can obtain a high-purity product that can be used for electronic grade through the reduction of raw material cost and refining process according to the repeated production process, and also maintains a solid state, not a gaseous state at room temperature. It is easy to handle by taking, and in case of leakage during the process, it solidifies itself at room temperature, thereby minimizing the toxic damage to the outside and the human body.

The present invention takes the form of a compound that maintains a solid state at room temperature, which is easy to handle, minimizes the damage of toxicity to the outside and the human body, and is a high purity polycrystal that can be used in electronic grade through a repeated production process. Provide silicon.

1 is a process chart of a high purity polysilicon production apparatus of the present invention.

Figure 2 is a detailed view of the iodide gas generating apparatus of the high purity polysilicon production apparatus of the present invention.

Figure 3 is a detailed view of the silicon iodide gas and silicon iodide liquid generating apparatus of the high purity polysilicon production apparatus of the present invention.

Figure 4 is a detailed view of the purification apparatus of the high purity polysilicon production apparatus of the present invention.

5 is a detailed view of a silicon precipitation apparatus of the high purity polysilicon production apparatus of the present invention.

Figure 6 is a detailed view of the waste treatment apparatus of the high purity polysilicon production apparatus of the present invention.

<Explanation of symbols for the main parts of the drawings>

100: iodine generation unit 110: iodine inlet

111: Iodine 114: First Heater

115: iodide gas 117: first reactor

120: first vacuum pump line 140: first argon gas injection line

200: 4 silicon iodide generation device 210: the first metal silicon inlet

211: first metal silicon 217: second reactor

220: second vacuum pump line 240: second argon gas injection line

300: 4 silicon iodide liquid generator 310: metal silicon separator

320: iodine impurity separator 330: iodine gas separator

400,400a: Purifier 414: third heater

417: third reactor 420: third vacuum pump line

440: fourth vacuum pump line 450: first collection container

460: second container 470: third container

480: fourth collection 490: fifth collection

500: waste treatment device 510: solid state furnace

513: silica mixer 515: first oxygen heating torch

517: first iodine gas collector 519: first waste collector

530: liquid oxidation furnace 535: second oxygen heating torch

537: 2nd iodine gas collector 539: 2nd waste collector

600: silicon precipitation device 610: fourth reactor

614: 4th heater 617: 4th vacuum pump line

619: fourth argon gas injection line 630: fifth reactor

631: Second metal silicon 633: Second metal silicon inlet

634: fifth heater 637: fifth vacuum pump line

639: fifth argon gas injection line 650: sixth reactor

653: Silicon seed 654: Sixth heater

657: 6th vacuum pump line 659: 6th argon gas injection line

670: solid liquid separator

Claims (12)

An iodide gas generator (100) for heating the solid iodine (111) introduced from the outside to produce the iodide gas (115); A silicon iodide gas generator 200 for generating a silicon iodide gas 215 by reacting the iodide gas 115 transferred from the iodide gas generating device 100 with the heating first metal silicon 211; A silicon iodide liquid generator 300 for generating a silicon iodide liquid 315 by lowering the temperature of the silicon iodide gas 215 transferred from the silicon iodide gas generator 200; Purifying the silicon iodide liquid 315 transferred from the silicon iodide liquid generating device 300 to heat and gasify, and then purify by separating and purifying impurities in a vapor state and cooling to produce a purified silicon iodide liquid 315 Device 400; The purified silicon iodide liquid 315 transferred from the refining apparatus 400 is heated and gasified, and then reacted with the second metal silicon 631 of the same raw material as the first metal silicon 211 being heated to react with the silicon iodide. And a silicon precipitation device (600) for producing a gas (635) and reacting the generated silicon iodide gas (635) with the heating silicon seed to deposit high purity polycrystalline silicon. According to claim 1, The iodide gas generating apparatus 100 is a first reaction for heating the solid iodine 111 introduced from the iodine inlet 110 with a first heater 114 to generate the iodide gas 115 The first vacuum pump line 120 for adjusting the air pressure of the furnace 117, the first reactor 117, and the first argon gas injection line 140 for injecting argon gas into the first reactor 117. High purity polycrystalline silicon manufacturing apparatus, characterized in that consisting of. The device of claim 1, wherein the silicon iodide gas generator 200 heats the first metal silicon 211 input from the first metal silicon inlet 210 with the second heater 214, and generates the iodide gas generator. The second reactor 217 for reacting with the iodide gas 115 transferred from the 100 to produce the silicon iodide gas 215, and the second vacuum pump line for adjusting the air pressure of the second reactor 217. And a second argon gas injection line (240) for injecting argon gas into the second reactor (217). According to claim 1, wherein the silicon iodide liquid generator 300 comprises a silicon silicon iodide separator 310, an iodide impurity separator 320, and an iodine gas separator 330, the silicon iodide gas generator 200 The silicon iodide gas 215 transferred from the metal silicon separator 310, the iodine impurity separator 320, and the iodine gas separator 330 gradually decreases in temperature to gradually decrease the temperature. It generates a silicon liquid 315, the iodide gas 115 is a high purity polycrystalline silicon manufacturing apparatus, characterized in that made to be recovered to the iodide gas generating device (100). The method of claim 1, the purification device 400 is composed of a third reactor 417 and the distillation column 437, The third reactor 417 controls the air pressure of the third heater 414 and the third reactor 417 for gasifying the silicon iodide liquid 315 transferred from the silicon iodide liquid generator 300. The third vacuum pump line 420 and the third argon gas injection line 440 for injecting argon gas into the third reactor 417, The distillation column 437 is classified into pure iodine 111 in a gas containing silicon iodide gas 215 transferred from the third reactor 417, and then collected into a first collection container 450 for collecting. After dividing into boron iodide, the second collecting container 460 for collecting, and after dividing into four silicon iodide, the third collecting container 470 for collecting and carbon iodide, and then collecting A high purity polycrystalline silicon manufacturing apparatus, characterized by consisting of a four collector 480, and a fifth collector 490 for collecting after being classified into aluminum iodide. According to claim 1, The purification device 400 is a high-purity polycrystalline silicon manufacturing apparatus, characterized in that the waste treatment apparatus 500 is further installed to recycle the iodide impurities generated during the purification process. According to claim 6, The waste treatment apparatus 500 is composed of a solid oxidation furnace 510, a liquid oxidation furnace 530, The solid oxidation furnace 510 includes a silica mixer 513 for mixing and mixing iodide impurities and silica, a first oxygen heating torch 515 for heating the iodide impurities mixed with silica, and an oxidation process. The first iodine gas collector 517 for collecting and recovering the iodine 111 in a gasified state, and the first waste collector 519 for collecting solid waste generated after oxidation, The liquid oxidation furnace 530 uses a second oxygen heating torch 535 for heating the untreated liquid waste into a solid waste in the solid oxidation furnace 510, and the iodine 111 generated in the oxidation process. A second iodine gas collector (537) for collecting and recovering in a gasified state, and a second waste collector (539) for collecting liquid waste generated after oxidation. The distillation column 437 of claim 5, wherein the distillation column 437 includes a first collector 450, a second collector 460, a third collector 470, a fourth collector 480, and a fifth collector. High-purity polycrystalline silicon manufacturing apparatus, characterized in that the collection container 490 is provided with a temperature-controlled cooling device (450a, 460a, 470a, 480a, 490a) to be discharged in a liquid state. The apparatus of claim 5, wherein the distillation column (437) is configured to recover the pure iodine (111) collected from the first collecting container (450) to the iodide gas generating device (100).  The method of claim 1, wherein the silicon precipitation device 600 is composed of a fourth reactor 610, a fifth reactor 630, and a sixth reactor 650, The fourth reactor 610 is a fourth heater 614 for gasifying the silicon iodide liquid 315 transferred from the third collector 470 sorted by the refining apparatus 400, and the fourth reactor ( The fourth vacuum pump line 617 for adjusting the air pressure of 600, and the fourth argon gas injection line 619 for injecting argon gas into the fourth reactor 600, The fifth reactor 630 is a second metal introduced from the second metal silicon inlet 633 to generate the silicon iodide gas 215 transferred from the fourth reactor 610 as the silicon iodide gas 635. The fifth heater 634 for heating the silicon 631, the fifth vacuum pump line 637 for adjusting the air pressure of the fifth reactor 630, and the fifth for injecting argon gas into the fifth reactor. Argon gas injection line (639), The sixth reactor 650 heats the silicon seed 655 introduced from the silicon seed 653 inlet to generate the silicon iodide gas 635 transferred from the fifth reactor 630 into high purity polycrystalline silicon. Sixth heater 654, the sixth vacuum pump line 657 for adjusting the air pressure of the sixth reactor 650, and the sixth argon gas injection line for injecting argon gas into the sixth reactor 650 ( 659) a high purity polycrystalline silicon manufacturing apparatus, characterized in that consisting of. The method of claim 10, wherein the silicon deposition device 600 is a purification device for the silicon iodide gas 215 generated during the reaction of the silicon iodide 635 and the silicon seed 653 in the sixth reactor 650 High purity polycrystalline silicon production apparatus, characterized in that consisting of a solid liquid separator 670 to recover. The high purity polycrystalline silicon manufacturing apparatus according to claim 1, wherein the refining apparatus 400 is further provided with a refining apparatus 400a to produce a high-purity product.

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