MD673G2 - Способ получения слоев InP - Google Patents

Способ получения слоев InP

Info

Publication number
MD673G2
MD673G2 MD94-0147A MD940147A MD673G2 MD 673 G2 MD673 G2 MD 673G2 MD 940147 A MD940147 A MD 940147A MD 673 G2 MD673 G2 MD 673G2
Authority
MD
Moldova
Prior art keywords
layers
indium source
inp
preliminary
inp layers
Prior art date
Application number
MD94-0147A
Other languages
English (en)
Romanian (ro)
Other versions
MD940147A (ro
MD673F2 (ro
Inventor
Vasile Botnariuc
Ion Diaconu
Леонид ГОРЧАК
Симион РАЕВСКИЙ
Valentin Plesca
Original Assignee
Государственный Университет Молд0
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Государственный Университет Молд0 filed Critical Государственный Университет Молд0
Priority to MD94-0147A priority Critical patent/MD673G2/ru
Priority to RU94040462/25A priority patent/RU94040462A/ru
Publication of MD940147A publication Critical patent/MD940147A/xx
Publication of MD673F2 publication Critical patent/MD673F2/xx
Publication of MD673G2 publication Critical patent/MD673G2/ru

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

Изобретение относится к полупроводниковой технологии и может быть использовано для получения тонких чистых слоев InP с высокими воспроизводимыми электрофизическими параметрами.Предложенный способ заключается в предварительной термической обработке источника индия и эпитаксиальном выращивании слоев в системе In-PCl3-H2, причем, предварительная термическая обработка источника индия осуществляется в вакууме.Технический результат изобретения заключается в очистке источника индия от неконтролируемых загрязнений и сокращении времени выхода в режим роста слоев InP.
MD94-0147A 1994-05-24 1994-05-24 Способ получения слоев InP MD673G2 (ru)

Priority Applications (2)

Application Number Priority Date Filing Date Title
MD94-0147A MD673G2 (ru) 1994-05-24 1994-05-24 Способ получения слоев InP
RU94040462/25A RU94040462A (ru) 1994-05-24 1994-11-04 Способ получения слоев inp

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
MD94-0147A MD673G2 (ru) 1994-05-24 1994-05-24 Способ получения слоев InP

Publications (3)

Publication Number Publication Date
MD940147A MD940147A (ro) 1995-11-30
MD673F2 MD673F2 (ro) 1995-11-30
MD673G2 true MD673G2 (ru) 1997-08-31

Family

ID=19738543

Family Applications (1)

Application Number Title Priority Date Filing Date
MD94-0147A MD673G2 (ru) 1994-05-24 1994-05-24 Способ получения слоев InP

Country Status (2)

Country Link
MD (1) MD673G2 (ru)
RU (1) RU94040462A (ru)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MD151Z (ru) * 2008-12-30 2010-09-30 Государственный Университет Молд0 Способ выращивания эпитаксиальных слоёв GaAs в горизонтальном реакторе
MD4510C1 (ru) * 2016-06-23 2018-03-31 Государственный Университет Молд0 Способ роста структуры n+-p-p+ InP для солнечных батарей

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MD4280C1 (ru) * 2013-09-04 2014-10-31 Государственный Университет Молд0 Способ роста структуры pInP-nCdS

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
R.D.Fairman, M.Omozi, E.B.Fank. Recent progress in the control of high-purity VPE by the PCl3-In-H2 technology. The 6th Symp. on GaAs and related compounds. London. 1977, p. 45-54. *
Обзоры по электронной технике. Серия 2. Полупроводниковые приборы. вып.3, 1983 г., М., Т.М.Колмакова, Г.Ф.Лымарь. "Выращивание эпитаксиальных слоев фосфида индия в системе In-PCl3-H2 для полевых транзисторов". *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MD151Z (ru) * 2008-12-30 2010-09-30 Государственный Университет Молд0 Способ выращивания эпитаксиальных слоёв GaAs в горизонтальном реакторе
MD4510C1 (ru) * 2016-06-23 2018-03-31 Государственный Университет Молд0 Способ роста структуры n+-p-p+ InP для солнечных батарей

Also Published As

Publication number Publication date
RU94040462A (ru) 1996-09-27
MD940147A (ro) 1995-11-30
MD673F2 (ro) 1995-11-30

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Legal Events

Date Code Title Description
FG3A Granted patent for invention
IF99 Valid patent on 19990615

Free format text: EXPIRES: 20140524