MD673G2 - Способ получения слоев InP - Google Patents

Способ получения слоев InP

Info

Publication number
MD673G2
MD673G2 MD94-0147A MD940147A MD673G2 MD 673 G2 MD673 G2 MD 673G2 MD 940147 A MD940147 A MD 940147A MD 673 G2 MD673 G2 MD 673G2
Authority
MD
Moldova
Prior art keywords
layers
indium source
inp
preliminary
inp layers
Prior art date
Application number
MD94-0147A
Other languages
English (en)
Romanian (ro)
Other versions
MD673F2 (ro
MD940147A (ro
Inventor
Vasile Botnariuc
Ion Diaconu
Леонид ГОРЧАК
Симион РАЕВСКИЙ
Valentin Plesca
Original Assignee
Государственный Университет Молд0
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Государственный Университет Молд0 filed Critical Государственный Университет Молд0
Priority to MD94-0147A priority Critical patent/MD673G2/ru
Priority to RU94040462/25A priority patent/RU94040462A/ru
Publication of MD673F2 publication Critical patent/MD673F2/xx
Publication of MD940147A publication Critical patent/MD940147A/xx
Publication of MD673G2 publication Critical patent/MD673G2/ru

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

Изобретение относится к полупроводниковой технологии и может быть использовано для получения тонких чистых слоев InP с высокими воспроизводимыми электрофизическими параметрами.Предложенный способ заключается в предварительной термической обработке источника индия и эпитаксиальном выращивании слоев в системе In-PCl3-H2, причем, предварительная термическая обработка источника индия осуществляется в вакууме.Технический результат изобретения заключается в очистке источника индия от неконтролируемых загрязнений и сокращении времени выхода в режим роста слоев InP.
MD94-0147A 1994-05-24 1994-05-24 Способ получения слоев InP MD673G2 (ru)

Priority Applications (2)

Application Number Priority Date Filing Date Title
MD94-0147A MD673G2 (ru) 1994-05-24 1994-05-24 Способ получения слоев InP
RU94040462/25A RU94040462A (ru) 1994-05-24 1994-11-04 Способ получения слоев inp

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
MD94-0147A MD673G2 (ru) 1994-05-24 1994-05-24 Способ получения слоев InP

Publications (3)

Publication Number Publication Date
MD673F2 MD673F2 (ro) 1995-11-30
MD940147A MD940147A (ro) 1995-11-30
MD673G2 true MD673G2 (ru) 1997-08-31

Family

ID=19738543

Family Applications (1)

Application Number Title Priority Date Filing Date
MD94-0147A MD673G2 (ru) 1994-05-24 1994-05-24 Способ получения слоев InP

Country Status (2)

Country Link
MD (1) MD673G2 (ru)
RU (1) RU94040462A (ru)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MD151Z (ru) * 2008-12-30 2010-09-30 Государственный Университет Молд0 Способ выращивания эпитаксиальных слоёв GaAs в горизонтальном реакторе
MD4510C1 (ru) * 2016-06-23 2018-03-31 Государственный Университет Молд0 Способ роста структуры n+-p-p+ InP для солнечных батарей

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MD4280C1 (ru) * 2013-09-04 2014-10-31 Государственный Университет Молд0 Способ роста структуры pInP-nCdS

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
R.D.Fairman, M.Omozi, E.B.Fank. Recent progress in the control of high-purity VPE by the PCl3-In-H2 technology. The 6th Symp. on GaAs and related compounds. London. 1977, p. 45-54. *
Обзоры по электронной технике. Серия 2. Полупроводниковые приборы. вып.3, 1983 г., М., Т.М.Колмакова, Г.Ф.Лымарь. "Выращивание эпитаксиальных слоев фосфида индия в системе In-PCl3-H2 для полевых транзисторов". *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MD151Z (ru) * 2008-12-30 2010-09-30 Государственный Университет Молд0 Способ выращивания эпитаксиальных слоёв GaAs в горизонтальном реакторе
MD4510C1 (ru) * 2016-06-23 2018-03-31 Государственный Университет Молд0 Способ роста структуры n+-p-p+ InP для солнечных батарей

Also Published As

Publication number Publication date
RU94040462A (ru) 1996-09-27
MD673F2 (ro) 1995-11-30
MD940147A (ro) 1995-11-30

Similar Documents

Publication Publication Date Title
EP1251567A3 (en) GaN related compound semiconductor and process for producing the same
MY115099A (en) Process for producing silicon semiconductor wafers with low defect density
MY119169A (en) Method of slicing semiconductor single crystal ingot
DE69432784D1 (de) Verfahren zur Herstellung eines Halbleitersubstrats
TW324834B (en) Method for forming membrane
MY132874A (en) Low defect density, vacancy dominated silicon
EP0866493A3 (en) Semiconductor substrate having compound semiconductor layer, process for its production, and electronic device fabricated on semiconductor substrate
MY100449A (en) High-oxygen-content silicon monocrystal substrate for semiconductor devices and production method therefor
MY141499A (en) Semiconductor member and process for preparing semiconductor member
MY124554A (en) Process for producing semiconductor article
MY112217A (en) Process for eliminating dislocations in the neck of a silicon single crystal
AU7062498A (en) Diamond growth
MY116855A (en) Argon recovery from silicon crystal furnace
EP0253611A3 (en) Method of epitaxially growing gallium arsenide on silicon
EP0273470A3 (en) Method for decontamination of a chamber used in vacuum processes for deposition, etching and/or growth of high purity films, particularly applicable to semiconductor technology
EP0363554A3 (en) Process and apparatus for producing epitaxially and/or highly texturally grown, high tc-oxide superconductor films, lacking in foreign phases, on substrates
MD673G2 (ru) Способ получения слоев InP
TW352479B (en) Process to producing semiconductor device and comprising device
CA2341608A1 (fr) Procede pour le depot sous vide d'un substrat courbe
MX9701087A (es) Procedimiento novedoso para la preparacion de diisopinoalcanforilcloroborano.
EP0770626A3 (en) Method for purifying thrombomodulin
AU6091198A (en) Method for improving the exploitability and processability of guar endosperm and products obtained using said method
AU3897099A (en) Method and system for distributing processing instructions with adata to be processed
EP0828286A3 (en) Method of manufacturing mirror-polished silicon wafers, and apparatus for processing silicon wafers
EP0252279A3 (en) Process and apparatus for seperating silicon wafers, to be used for solar cells, from according to the horizontal ribbon pulling growth method prepared silicon ribbon

Legal Events

Date Code Title Description
FG3A Granted patent for invention
IF99 Valid patent on 19990615

Free format text: EXPIRES: 20140524