MD4280C1 - Способ роста структуры pInP-nCdS - Google Patents

Способ роста структуры pInP-nCdS

Info

Publication number
MD4280C1
MD4280C1 MDA20130062A MD20130062A MD4280C1 MD 4280 C1 MD4280 C1 MD 4280C1 MD A20130062 A MDA20130062 A MD A20130062A MD 20130062 A MD20130062 A MD 20130062A MD 4280 C1 MD4280 C1 MD 4280C1
Authority
MD
Moldova
Prior art keywords
ncds
pinp
substrate
growth method
cdcl2
Prior art date
Application number
MDA20130062A
Other languages
English (en)
Moldavian (mo)
Romanian (ro)
Other versions
MD4280B1 (ru
Inventor
Василе БОТНАРЮК
Леонид ГОРЧАК
Андрей КОВАЛ
Борис ЧИНИК
Симион РАЕВСКИЙ
Original Assignee
Государственный Университет Молд0
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Государственный Университет Молд0 filed Critical Государственный Университет Молд0
Priority to MDA20130062A priority Critical patent/MD4280C1/ru
Publication of MD4280B1 publication Critical patent/MD4280B1/ru
Publication of MD4280C1 publication Critical patent/MD4280C1/ru

Links

Classifications

    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

Изобретение относится к полупроводниковой технологии и может быть использовано для изготовления преобразователей солнечного излучения в электрическую энергию.Способ роста структуры pInP-nCdS включает размещение предварительно протравленной pInP подложки с кристаллографической ориентацией (100) и разориентацией 3…5° в направлении (110) в реактор, нагрев зоны роста подложки и стабилизацию температуры в диапазоне 400…450°C, распыление, в открытом потоке кислорода, растворов CdCl2 и SnCl4 c формированием на подложке слоя Cd2SnO4, затем распыление растворов CdCl2 и CS(NH2)2 с формированием на нем слоя nCdS.
MDA20130062A 2013-09-04 2013-09-04 Способ роста структуры pInP-nCdS MD4280C1 (ru)

Priority Applications (1)

Application Number Priority Date Filing Date Title
MDA20130062A MD4280C1 (ru) 2013-09-04 2013-09-04 Способ роста структуры pInP-nCdS

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
MDA20130062A MD4280C1 (ru) 2013-09-04 2013-09-04 Способ роста структуры pInP-nCdS

Publications (2)

Publication Number Publication Date
MD4280B1 MD4280B1 (ru) 2014-03-31
MD4280C1 true MD4280C1 (ru) 2014-10-31

Family

ID=50685394

Family Applications (1)

Application Number Title Priority Date Filing Date
MDA20130062A MD4280C1 (ru) 2013-09-04 2013-09-04 Способ роста структуры pInP-nCdS

Country Status (1)

Country Link
MD (1) MD4280C1 (ru)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MD972Z (ru) * 2015-02-19 2016-06-30 Государственный Университет Молд0 Способ роста структуры p+InP-p-InP-n+CdS для фотоэлектрических элементов

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MD4510C1 (ru) * 2016-06-23 2018-03-31 Государственный Университет Молд0 Способ роста структуры n+-p-p+ InP для солнечных батарей
MD4554C1 (ru) * 2017-10-18 2018-09-30 Государственный Университет Молд0 Способ повышения эфективности фотоэлектрических элементов на основе p+InP-p-InP-n+CdS

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MD673F2 (ro) * 1994-05-24 1995-11-30 Univ De Stat Din Moldova Procedeu de obtinere a straturilor InP Process for the InP layers production
MD626F2 (en) * 1994-01-13 1996-11-29 Univ De Stat Din Moldova The method of heterostructures making of p+InP-pInP/CdS and p+GaAs-pGaAs/CdS
EP0962963A1 (en) * 1997-08-27 1999-12-08 Matsushita Electric Industrial Co., Ltd. Silicon carbide substrate, process for producing the same, and semiconductor element containing silicon carbide substrate
EP1157414A1 (en) * 1999-12-16 2001-11-28 Koninklijke Philips Electronics N.V. Method of achieving higher inversion layer mobility in silicon carbide semiconductor devices
EP1333482A2 (en) * 2002-01-31 2003-08-06 Osaka Prefecture Method for manufacturing a semiconductor silicon carbide on insulator substrate (SOI) and apparatus therefore
RU2008111514A (ru) * 2005-08-26 2009-10-10 Смольтек Аб (Se) Межсоединения и теплорассеиватели на основе наноструктур
MD151Z (ru) * 2008-12-30 2010-09-30 Государственный Университет Молд0 Способ выращивания эпитаксиальных слоёв GaAs в горизонтальном реакторе

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MD626F2 (en) * 1994-01-13 1996-11-29 Univ De Stat Din Moldova The method of heterostructures making of p+InP-pInP/CdS and p+GaAs-pGaAs/CdS
MD673F2 (ro) * 1994-05-24 1995-11-30 Univ De Stat Din Moldova Procedeu de obtinere a straturilor InP Process for the InP layers production
EP0962963A1 (en) * 1997-08-27 1999-12-08 Matsushita Electric Industrial Co., Ltd. Silicon carbide substrate, process for producing the same, and semiconductor element containing silicon carbide substrate
EP1157414A1 (en) * 1999-12-16 2001-11-28 Koninklijke Philips Electronics N.V. Method of achieving higher inversion layer mobility in silicon carbide semiconductor devices
EP1333482A2 (en) * 2002-01-31 2003-08-06 Osaka Prefecture Method for manufacturing a semiconductor silicon carbide on insulator substrate (SOI) and apparatus therefore
RU2008111514A (ru) * 2005-08-26 2009-10-10 Смольтек Аб (Se) Межсоединения и теплорассеиватели на основе наноструктур
MD151Z (ru) * 2008-12-30 2010-09-30 Государственный Университет Молд0 Способ выращивания эпитаксиальных слоёв GaAs в горизонтальном реакторе

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
Pleşca V. N. Teza de doctorat "Realizarea joncţiunilor semiconductoare pe baza fosfurii de indiu şi cercetarea proprietăţilor fotoelectrice", 1995 *
Yoshikawa A., Sakai Y. High efficiency n-CdS/p-InP solar cells prepared by the closespaced technique. Solid-State Electronics, 1977, Vol. 20, p. 133-137 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MD972Z (ru) * 2015-02-19 2016-06-30 Государственный Университет Молд0 Способ роста структуры p+InP-p-InP-n+CdS для фотоэлектрических элементов

Also Published As

Publication number Publication date
MD4280B1 (ru) 2014-03-31

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Legal Events

Date Code Title Description
FG4A Patent for invention issued
KA4A Patent for invention lapsed due to non-payment of fees (with right of restoration)
MM4A Patent for invention definitely lapsed due to non-payment of fees