MD626F2 - The method of heterostructures making of p+InP-pInP/CdS and p+GaAs-pGaAs/CdS - Google Patents

The method of heterostructures making of p+InP-pInP/CdS and p+GaAs-pGaAs/CdS

Info

Publication number
MD626F2
MD626F2 MD940004A MD940004A MD626F2 MD 626 F2 MD626 F2 MD 626F2 MD 940004 A MD940004 A MD 940004A MD 940004 A MD940004 A MD 940004A MD 626 F2 MD626 F2 MD 626F2
Authority
MD
Moldova
Prior art keywords
cds
pinp
inp
pgaas
gaas
Prior art date
Application number
MD940004A
Other languages
Romanian (ro)
Other versions
MD940004A (en
MD626G2 (en
Inventor
Vasile Botnariuc
Petru Gaugas
Andrei Coval
Andrei Chitoroaga
Valentin Plesca
Original Assignee
Univ De Stat Din Moldova
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ De Stat Din Moldova filed Critical Univ De Stat Din Moldova
Priority to MD94-0004A priority Critical patent/MD626G2/en
Publication of MD940004A publication Critical patent/MD940004A/en
Publication of MD626F2 publication Critical patent/MD626F2/en
Publication of MD626G2 publication Critical patent/MD626G2/en

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  • Photovoltaic Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

Inventia se refera la tehnologia semiconductorilor si poate fi utilizata la obtinerea in sistem deschis cu transport de gaze a heterojonctiunilor p+InP-pInP/CdS si p+GaAs-pGaAs/CdS pentru ce Pentru marirea productivitatii procesului si a calitatii parametrilor electrofizici ai celulelor solare cu ajutorul procedeului solicitat, care include cresterea structurilor p+InP-pInP si p
MD94-0004A 1994-01-13 1994-01-13 Process for heterostructure P+ InP-PInP/CdS and P+GaAs-pGaAs/CdS obtaining MD626G2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
MD94-0004A MD626G2 (en) 1994-01-13 1994-01-13 Process for heterostructure P+ InP-PInP/CdS and P+GaAs-pGaAs/CdS obtaining

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
MD94-0004A MD626G2 (en) 1994-01-13 1994-01-13 Process for heterostructure P+ InP-PInP/CdS and P+GaAs-pGaAs/CdS obtaining

Publications (3)

Publication Number Publication Date
MD940004A MD940004A (en) 1995-07-31
MD626F2 true MD626F2 (en) 1996-11-29
MD626G2 MD626G2 (en) 1997-06-30

Family

ID=19738508

Family Applications (1)

Application Number Title Priority Date Filing Date
MD94-0004A MD626G2 (en) 1994-01-13 1994-01-13 Process for heterostructure P+ InP-PInP/CdS and P+GaAs-pGaAs/CdS obtaining

Country Status (1)

Country Link
MD (1) MD626G2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MD4280C1 (en) * 2013-09-04 2014-10-31 Государственный Университет Молд0 pInP-nCdS structure growth method

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MD972Z (en) * 2015-02-19 2016-06-30 Государственный Университет Молд0 Method for p+InP-p-InP-n+CdS structure growth for photovoltaic cells
MD4510C1 (en) * 2016-06-23 2018-03-31 Государственный Университет Молд0 Method for growth of n+-p-p+ InP structure for solar cells

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MD4280C1 (en) * 2013-09-04 2014-10-31 Государственный Университет Молд0 pInP-nCdS structure growth method

Also Published As

Publication number Publication date
MD940004A (en) 1995-07-31
MD626G2 (en) 1997-06-30

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Legal Events

Date Code Title Description
FG3A Granted patent for invention
IF99 Valid patent on 19990615

Free format text: EXPIRES: 20140113