MD4280C1 - Procedeu de creştere a structurii pInP-nCdS - Google Patents
Procedeu de creştere a structurii pInP-nCdS Download PDFInfo
- Publication number
- MD4280C1 MD4280C1 MDA20130062A MD20130062A MD4280C1 MD 4280 C1 MD4280 C1 MD 4280C1 MD A20130062 A MDA20130062 A MD A20130062A MD 20130062 A MD20130062 A MD 20130062A MD 4280 C1 MD4280 C1 MD 4280C1
- Authority
- MD
- Moldova
- Prior art keywords
- ncds
- pinp
- layer
- substrate
- cdcl2
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 11
- YKYOUMDCQGMQQO-UHFFFAOYSA-L cadmium dichloride Chemical compound Cl[Cd]Cl YKYOUMDCQGMQQO-UHFFFAOYSA-L 0.000 claims abstract description 19
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 229910021627 Tin(IV) chloride Inorganic materials 0.000 claims abstract description 7
- HPGGPRDJHPYFRM-UHFFFAOYSA-J tin(iv) chloride Chemical compound Cl[Sn](Cl)(Cl)Cl HPGGPRDJHPYFRM-UHFFFAOYSA-J 0.000 claims abstract description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 6
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 6
- 239000001301 oxygen Substances 0.000 claims abstract description 6
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 6
- 238000005507 spraying Methods 0.000 claims abstract description 6
- 238000010438 heat treatment Methods 0.000 claims abstract description 3
- 230000000087 stabilizing effect Effects 0.000 claims abstract description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 239000004065 semiconductor Substances 0.000 abstract description 3
- 238000005516 engineering process Methods 0.000 abstract description 2
- 230000005855 radiation Effects 0.000 abstract description 2
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 6
- 230000008021 deposition Effects 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 235000012431 wafers Nutrition 0.000 description 3
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 2
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 2
- 239000002800 charge carrier Substances 0.000 description 2
- UMGDCJDMYOKAJW-UHFFFAOYSA-N thiourea Chemical compound NC(N)=S UMGDCJDMYOKAJW-UHFFFAOYSA-N 0.000 description 2
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 1
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Natural products NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| MDA20130062A MD4280C1 (mo) | 2013-09-04 | 2013-09-04 | Procedeu de creştere a structurii pInP-nCdS |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| MDA20130062A MD4280C1 (mo) | 2013-09-04 | 2013-09-04 | Procedeu de creştere a structurii pInP-nCdS |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| MD4280B1 MD4280B1 (en) | 2014-03-31 |
| MD4280C1 true MD4280C1 (mo) | 2014-10-31 |
Family
ID=50685394
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| MDA20130062A MD4280C1 (mo) | 2013-09-04 | 2013-09-04 | Procedeu de creştere a structurii pInP-nCdS |
Country Status (1)
| Country | Link |
|---|---|
| MD (1) | MD4280C1 (mo) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| MD972Z (ro) * | 2015-02-19 | 2016-06-30 | Государственный Университет Молд0 | Procedeu de creştere a structurii p+InP-p-InP-n+CdS pentru celule fotovoltaice |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| MD4510C1 (ro) * | 2016-06-23 | 2018-03-31 | Государственный Университет Молд0 | Procedeu de creştere a structurii n+-p-p+ InP pentru celule solare |
| MD4554C1 (ro) * | 2017-10-18 | 2018-09-30 | Государственный Университет Молд0 | Procedeu de majorare a eficienţei celulelor fotovoltaice pe baza p+InP-p-InP-n+CdS |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| MD673F2 (ro) * | 1994-05-24 | 1995-11-30 | Univ De Stat Din Moldova | Procedeu de obtinere a straturilor InP Process for the InP layers production |
| MD626F2 (en) * | 1994-01-13 | 1996-11-29 | Univ De Stat Din Moldova | The method of heterostructures making of p+InP-pInP/CdS and p+GaAs-pGaAs/CdS |
| EP0962963A1 (en) * | 1997-08-27 | 1999-12-08 | Matsushita Electric Industrial Co., Ltd. | Silicon carbide substrate, process for producing the same, and semiconductor element containing silicon carbide substrate |
| EP1157414A1 (en) * | 1999-12-16 | 2001-11-28 | Koninklijke Philips Electronics N.V. | Method of achieving higher inversion layer mobility in silicon carbide semiconductor devices |
| EP1333482A2 (en) * | 2002-01-31 | 2003-08-06 | Osaka Prefecture | Method for manufacturing a semiconductor silicon carbide on insulator substrate (SOI) and apparatus therefore |
| RU2008111514A (ru) * | 2005-08-26 | 2009-10-10 | Смольтек Аб (Se) | Межсоединения и теплорассеиватели на основе наноструктур |
| MD151Z (ro) * | 2008-12-30 | 2010-09-30 | Государственный Университет Молд0 | Procedeu de creştere a straturilor epitaxiale GaAs într-un reactor orizontal |
-
2013
- 2013-09-04 MD MDA20130062A patent/MD4280C1/mo not_active IP Right Cessation
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| MD626F2 (en) * | 1994-01-13 | 1996-11-29 | Univ De Stat Din Moldova | The method of heterostructures making of p+InP-pInP/CdS and p+GaAs-pGaAs/CdS |
| MD673F2 (ro) * | 1994-05-24 | 1995-11-30 | Univ De Stat Din Moldova | Procedeu de obtinere a straturilor InP Process for the InP layers production |
| EP0962963A1 (en) * | 1997-08-27 | 1999-12-08 | Matsushita Electric Industrial Co., Ltd. | Silicon carbide substrate, process for producing the same, and semiconductor element containing silicon carbide substrate |
| EP1157414A1 (en) * | 1999-12-16 | 2001-11-28 | Koninklijke Philips Electronics N.V. | Method of achieving higher inversion layer mobility in silicon carbide semiconductor devices |
| EP1333482A2 (en) * | 2002-01-31 | 2003-08-06 | Osaka Prefecture | Method for manufacturing a semiconductor silicon carbide on insulator substrate (SOI) and apparatus therefore |
| RU2008111514A (ru) * | 2005-08-26 | 2009-10-10 | Смольтек Аб (Se) | Межсоединения и теплорассеиватели на основе наноструктур |
| MD151Z (ro) * | 2008-12-30 | 2010-09-30 | Государственный Университет Молд0 | Procedeu de creştere a straturilor epitaxiale GaAs într-un reactor orizontal |
Non-Patent Citations (2)
| Title |
|---|
| Pleşca V. N. Teza de doctorat "Realizarea joncţiunilor semiconductoare pe baza fosfurii de indiu şi cercetarea proprietăţilor fotoelectrice", 1995 * |
| Yoshikawa A., Sakai Y. High efficiency n-CdS/p-InP solar cells prepared by the closespaced technique. Solid-State Electronics, 1977, Vol. 20, p. 133-137 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| MD972Z (ro) * | 2015-02-19 | 2016-06-30 | Государственный Университет Молд0 | Procedeu de creştere a structurii p+InP-p-InP-n+CdS pentru celule fotovoltaice |
Also Published As
| Publication number | Publication date |
|---|---|
| MD4280B1 (en) | 2014-03-31 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FG4A | Patent for invention issued | ||
| KA4A | Patent for invention lapsed due to non-payment of fees (with right of restoration) | ||
| MM4A | Patent for invention definitely lapsed due to non-payment of fees |