MD151Z - Procedeu de creştere a straturilor epitaxiale GaAs într-un reactor orizontal - Google Patents

Procedeu de creştere a straturilor epitaxiale GaAs într-un reactor orizontal Download PDF

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Publication number
MD151Z
MD151Z MDS20090001A MDS20090001A MD151Z MD 151 Z MD151 Z MD 151Z MD S20090001 A MDS20090001 A MD S20090001A MD S20090001 A MDS20090001 A MD S20090001A MD 151 Z MD151 Z MD 151Z
Authority
MD
Moldova
Prior art keywords
epitaxial layers
growth
reactor
horizontal reactor
gaas epitaxial
Prior art date
Application number
MDS20090001A
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English (en)
Russian (ru)
Inventor
Василе БОТНАРЮК
Леонид ГОРЧАК
Симион РАЕВСКИЙ
Юрий ЖИЛЯЕВ
Леонид ФЁДОРОВ
Original Assignee
Государственный Университет Молд0
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Государственный Университет Молд0 filed Critical Государственный Университет Молд0
Priority to MDS20090001A priority Critical patent/MD151Z/ro
Publication of MD151Y publication Critical patent/MD151Y/ro
Publication of MD151Z publication Critical patent/MD151Z/ro

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Abstract

Invenţia se referă la procedeele de creştere a straturilor epitaxiale, în particular la un procedeu de creştere a straturilor epitaxiale GaAs într-un reactor orizontal.Procedeul, conform invenţiei, include amplasarea unui substrat pregătit şi a unei surse de galiu într-un reactor, ermetizarea reactorului şi suflarea lui cu hidrogen cu un debit de 1000 cm3/min timp de o oră, încălzirea sursei de galiu până la temperatura de 800°C, a zonei de depunere până la 715…740°C cu menţinerea unui gradient de creştere a temperaturii de 1,7…2,1°C/cm şi depunerea straturilor epitaxiale la o viteză liniară de 33…35 cm/min a fluxului de hidrogencu vapori de Ga-AsCl3.
MDS20090001A 2008-12-30 2008-12-30 Procedeu de creştere a straturilor epitaxiale GaAs într-un reactor orizontal MD151Z (ro)

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Application Number Priority Date Filing Date Title
MDS20090001A MD151Z (ro) 2008-12-30 2008-12-30 Procedeu de creştere a straturilor epitaxiale GaAs într-un reactor orizontal

Applications Claiming Priority (1)

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MDS20090001A MD151Z (ro) 2008-12-30 2008-12-30 Procedeu de creştere a straturilor epitaxiale GaAs într-un reactor orizontal

Publications (2)

Publication Number Publication Date
MD151Y MD151Y (ro) 2010-02-26
MD151Z true MD151Z (ro) 2010-09-30

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MDS20090001A MD151Z (ro) 2008-12-30 2008-12-30 Procedeu de creştere a straturilor epitaxiale GaAs într-un reactor orizontal

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MD4280C1 (ro) * 2013-09-04 2014-10-31 Государственный Университет Молд0 Procedeu de creştere a structurii pInP-nCdS
MD972Z (ro) * 2015-02-19 2016-06-30 Государственный Университет Молд0 Procedeu de creştere a structurii p+InP-p-InP-n+CdS pentru celule fotovoltaice
MD4510C1 (ro) * 2016-06-23 2018-03-31 Государственный Университет Молд0 Procedeu de creştere a structurii n+-p-p+ InP pentru celule solare

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MD4554C1 (ro) * 2017-10-18 2018-09-30 Государственный Университет Молд0 Procedeu de majorare a eficienţei celulelor fotovoltaice pe baza p+InP-p-InP-n+CdS

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1118579A (en) * 1967-04-21 1968-07-03 Standard Telephones Cables Ltd A method of and apparatus for growing an epitaxial layer of semiconductive material on a surface of a semiconductive substrate
JPS5635411A (en) * 1979-08-31 1981-04-08 Fujitsu Ltd Epitaxial wafer of gallium arsenide and its manufacture
JPH04354325A (ja) * 1991-05-31 1992-12-08 Nikko Kyodo Co Ltd 化合物半導体のエピタキシャル成長方法
JPH04359509A (ja) * 1991-06-06 1992-12-11 Sumitomo Electric Ind Ltd 三元系化合物半導体のエピタキシャル成長方法
JPH0684803A (ja) * 1992-09-01 1994-03-25 Toshiba Corp 気相エピタキシャル成長装置
JPH06172084A (ja) * 1992-12-08 1994-06-21 Sumitomo Electric Ind Ltd 化合物半導体のエピタキシャル成長方法及び装置
MD499G2 (ro) * 1993-12-30 1997-05-31 Государственный Университет Молд0 Procedeu de creştere a straturilor epitaxiale AIII BV în sistem de cloruri
MD627G2 (ro) * 1994-07-25 1997-06-30 Государственный Университет Молд0 Procedeu de obţinere a straturilor epitaxiale de fosfură de indiu din fază gazoasă
MD673G2 (ro) * 1994-05-24 1997-08-31 Государственный Университет Молд0 Procedeu de obţinere a straturilor InP
MD930G2 (ro) * 1997-04-09 1999-01-31 Государственный Университет Молд0 Procedeu de obţinere a straturilor de materiale semiconductoare din fază gazoasă
  • 2008

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1118579A (en) * 1967-04-21 1968-07-03 Standard Telephones Cables Ltd A method of and apparatus for growing an epitaxial layer of semiconductive material on a surface of a semiconductive substrate
JPS5635411A (en) * 1979-08-31 1981-04-08 Fujitsu Ltd Epitaxial wafer of gallium arsenide and its manufacture
JPH04354325A (ja) * 1991-05-31 1992-12-08 Nikko Kyodo Co Ltd 化合物半導体のエピタキシャル成長方法
JPH04359509A (ja) * 1991-06-06 1992-12-11 Sumitomo Electric Ind Ltd 三元系化合物半導体のエピタキシャル成長方法
JPH0684803A (ja) * 1992-09-01 1994-03-25 Toshiba Corp 気相エピタキシャル成長装置
JPH06172084A (ja) * 1992-12-08 1994-06-21 Sumitomo Electric Ind Ltd 化合物半導体のエピタキシャル成長方法及び装置
MD499G2 (ro) * 1993-12-30 1997-05-31 Государственный Университет Молд0 Procedeu de creştere a straturilor epitaxiale AIII BV în sistem de cloruri
MD673G2 (ro) * 1994-05-24 1997-08-31 Государственный Университет Молд0 Procedeu de obţinere a straturilor InP
MD627G2 (ro) * 1994-07-25 1997-06-30 Государственный Университет Молд0 Procedeu de obţinere a straturilor epitaxiale de fosfură de indiu din fază gazoasă
MD930G2 (ro) * 1997-04-09 1999-01-31 Государственный Университет Молд0 Procedeu de obţinere a straturilor de materiale semiconductoare din fază gazoasă

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
Dilorenzo J. V. Vapor growth of epitaxial GaAs: a summary of parameters which influence the purity and morphology of epitaxial layers. J. Crystal Growth, 1972, vol. 17, p. 189…206. *
Ботнарюк В.М. Исследование арсенидгаллиевых структур для силовых приборов полученных низкотемпературной эпитаксией в системе Ga-AsCl3-H2. Диссертация на соискание ученой степени кандидата физико-математических наук, 1986, Кишинёв, c. 93…94. *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MD4280C1 (ro) * 2013-09-04 2014-10-31 Государственный Университет Молд0 Procedeu de creştere a structurii pInP-nCdS
MD972Z (ro) * 2015-02-19 2016-06-30 Государственный Университет Молд0 Procedeu de creştere a structurii p+InP-p-InP-n+CdS pentru celule fotovoltaice
MD4510C1 (ro) * 2016-06-23 2018-03-31 Государственный Университет Молд0 Procedeu de creştere a structurii n+-p-p+ InP pentru celule solare

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Publication number Publication date
MD151Y (ro) 2010-02-26

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KA4Y Short-term patent lapsed due to non-payment of fees (with right of restoration)