ATE514179T1 - Verfahren zur herstellung einer nitridbasierten halbleiteroptikvorrichtung - Google Patents

Verfahren zur herstellung einer nitridbasierten halbleiteroptikvorrichtung

Info

Publication number
ATE514179T1
ATE514179T1 AT10151354T AT10151354T ATE514179T1 AT E514179 T1 ATE514179 T1 AT E514179T1 AT 10151354 T AT10151354 T AT 10151354T AT 10151354 T AT10151354 T AT 10151354T AT E514179 T1 ATE514179 T1 AT E514179T1
Authority
AT
Austria
Prior art keywords
reactor
indium
well layer
source
temperature
Prior art date
Application number
AT10151354T
Other languages
English (en)
Inventor
Yohei Enya
Yusuke Yoshizumi
Masaki Ueno
Takashi Kyono
Katsushi Akita
Original Assignee
Sumitomo Electric Industries
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries filed Critical Sumitomo Electric Industries
Application granted granted Critical
Publication of ATE514179T1 publication Critical patent/ATE514179T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/02433—Crystal orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Led Devices (AREA)
AT10151354T 2009-01-23 2010-01-22 Verfahren zur herstellung einer nitridbasierten halbleiteroptikvorrichtung ATE514179T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009013327A JP5136437B2 (ja) 2009-01-23 2009-01-23 窒化物系半導体光素子を作製する方法

Publications (1)

Publication Number Publication Date
ATE514179T1 true ATE514179T1 (de) 2011-07-15

Family

ID=42080798

Family Applications (1)

Application Number Title Priority Date Filing Date
AT10151354T ATE514179T1 (de) 2009-01-23 2010-01-22 Verfahren zur herstellung einer nitridbasierten halbleiteroptikvorrichtung

Country Status (7)

Country Link
US (1) US8048702B2 (de)
EP (1) EP2214197B1 (de)
JP (1) JP5136437B2 (de)
KR (1) KR20100086958A (de)
CN (1) CN101789474B (de)
AT (1) ATE514179T1 (de)
TW (1) TW201114060A (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5515575B2 (ja) * 2009-09-30 2014-06-11 住友電気工業株式会社 Ｉｉｉ族窒化物半導体光素子、エピタキシャル基板、及びｉｉｉ族窒化物半導体光素子を作製する方法
JP2013541227A (ja) * 2010-10-27 2013-11-07 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア 半極性｛２０−２−１｝基板上の高出力、高効率、および低効率ドループｉｉｉ窒化物発光ダイオード
TWI415301B (zh) * 2011-01-10 2013-11-11 Genesis Photonics Inc 氮化物系半導體發光結構
EP2667421A1 (de) * 2011-01-21 2013-11-27 Panasonic Corporation Lichtemittierendes halbleiterelement aus einer galliumnitridverbindung und mit besagtem lichtemittierenden element ausgerüstete lichtquelle
KR20140039032A (ko) 2011-06-10 2014-03-31 더 리전츠 오브 더 유니버시티 오브 캘리포니아 질화 갈륨 반극성 기판들에서 낮은 저하 발광 다이오드 구조
JP5252042B2 (ja) * 2011-07-21 2013-07-31 住友電気工業株式会社 Ｉｉｉ族窒化物半導体発光素子、及びｉｉｉ族窒化物半導体発光素子を作製する方法
CN103178178A (zh) * 2013-04-08 2013-06-26 合肥彩虹蓝光科技有限公司 一种提高氮化镓基发光二极管电子迁移率的结构及其生产方法
US9048389B2 (en) 2013-09-23 2015-06-02 Industrial Technology Research Institute Light emitting diode
CN105742434B (zh) * 2016-05-16 2018-05-11 安徽三安光电有限公司 一种氮化物发光二极管及其制备方法
WO2019106843A1 (ja) * 2017-12-01 2019-06-06 三菱電機株式会社 半導体装置の製造方法、半導体装置
WO2021044489A1 (ja) * 2019-09-02 2021-03-11 日本碍子株式会社 半導体膜
CN113013302A (zh) * 2021-02-26 2021-06-22 东莞市中麒光电技术有限公司 InGaN基红光LED芯片结构的制备方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3454200B2 (ja) * 1998-09-21 2003-10-06 日亜化学工業株式会社 発光素子
JP2001102633A (ja) * 1999-07-26 2001-04-13 Sharp Corp 窒化物系化合物半導体発光素子の製造方法
JP2001057442A (ja) * 1999-08-19 2001-02-27 Sharp Corp Ｉｉｉ−ｖ族窒化物半導体の製造方法
FR2807909B1 (fr) * 2000-04-12 2006-07-28 Centre Nat Rech Scient COUCHE MINCE SEMI-CONDUCTRICE DE GaInN, SON PROCEDE DE PREPARATION; DEL COMPRENANT CETTE COUCHE ET DISPOSITIF D'ECLAIRAGE COMPRENANT CETTE DEL
JP4822608B2 (ja) * 2001-05-14 2011-11-24 シャープ株式会社 窒化物系半導体発光素子およびその製造方法
JP4784012B2 (ja) * 2001-07-27 2011-09-28 日亜化学工業株式会社 窒化物半導体基板、及びその製造方法
US6645885B2 (en) * 2001-09-27 2003-11-11 The National University Of Singapore Forming indium nitride (InN) and indium gallium nitride (InGaN) quantum dots grown by metal-organic-vapor-phase-epitaxy (MOCVD)
US6887727B2 (en) * 2003-01-28 2005-05-03 Agilent Technologies, Inc. System and method for increasing nitrogen incorporation into a semiconductor material layer using an additional element
JP2005228789A (ja) * 2004-02-10 2005-08-25 Sharp Corp 半導体デバイスの製造方法およびそれにより得られる半導体発光素子
JP4389723B2 (ja) * 2004-02-17 2009-12-24 住友電気工業株式会社 半導体素子を形成する方法
KR100513923B1 (ko) * 2004-08-13 2005-09-08 재단법인서울대학교산학협력재단 질화물 반도체층을 성장시키는 방법 및 이를 이용하는 질화물 반도체 발광소자
JP4617922B2 (ja) * 2005-02-25 2011-01-26 ソニー株式会社 半導体装置の製造方法
US20090140286A1 (en) * 2005-04-07 2009-06-04 Showa Denko K.K. Production Method of Group III Nitride Semiconductor Element
CN100576586C (zh) * 2005-04-07 2009-12-30 昭和电工株式会社 制造ⅲ族氮化物半导体元件的方法
JP2008028121A (ja) * 2006-07-20 2008-02-07 Hitachi Cable Ltd 半導体発光素子の製造方法
CN101874309B (zh) * 2008-09-11 2013-01-30 住友电气工业株式会社 氮化物类半导体光元件、用于氮化物类半导体光元件的外延晶片及制造半导体发光元件的方法

Also Published As

Publication number Publication date
KR20100086958A (ko) 2010-08-02
CN101789474B (zh) 2013-11-06
EP2214197A1 (de) 2010-08-04
US8048702B2 (en) 2011-11-01
TW201114060A (en) 2011-04-16
JP5136437B2 (ja) 2013-02-06
US20100190284A1 (en) 2010-07-29
JP2010171267A (ja) 2010-08-05
EP2214197B1 (de) 2011-06-22
CN101789474A (zh) 2010-07-28

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