ATE482475T1 - Verfahren zur bildung einer quantentopfstruktur und verfahren zur herstellung eines lichtemittierenden halbleiterelements - Google Patents

Verfahren zur bildung einer quantentopfstruktur und verfahren zur herstellung eines lichtemittierenden halbleiterelements

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Publication number
ATE482475T1
ATE482475T1 AT09005065T AT09005065T ATE482475T1 AT E482475 T1 ATE482475 T1 AT E482475T1 AT 09005065 T AT09005065 T AT 09005065T AT 09005065 T AT09005065 T AT 09005065T AT E482475 T1 ATE482475 T1 AT E482475T1
Authority
AT
Austria
Prior art keywords
forming
quantum well
well structure
well
layers
Prior art date
Application number
AT09005065T
Other languages
English (en)
Inventor
Yohei Enya
Yusuke Yoshizumi
Masaki Ueno
Fumitake Nakanishi
Original Assignee
Sumitomo Electric Industries
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries filed Critical Sumitomo Electric Industries
Application granted granted Critical
Publication of ATE482475T1 publication Critical patent/ATE482475T1/de

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3416—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0137—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2907—Materials being Group IIIA-VA materials
    • H10P14/2908—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2926—Crystal orientations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3214—Materials thereof being Group IIIA-VA semiconductors
    • H10P14/3216—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures

Landscapes

  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)
AT09005065T 2008-04-09 2009-04-06 Verfahren zur bildung einer quantentopfstruktur und verfahren zur herstellung eines lichtemittierenden halbleiterelements ATE482475T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008101781A JP4539752B2 (ja) 2008-04-09 2008-04-09 量子井戸構造の形成方法および半導体発光素子の製造方法

Publications (1)

Publication Number Publication Date
ATE482475T1 true ATE482475T1 (de) 2010-10-15

Family

ID=40911598

Family Applications (1)

Application Number Title Priority Date Filing Date
AT09005065T ATE482475T1 (de) 2008-04-09 2009-04-06 Verfahren zur bildung einer quantentopfstruktur und verfahren zur herstellung eines lichtemittierenden halbleiterelements

Country Status (7)

Country Link
US (1) US8173458B2 (de)
EP (1) EP2124266B1 (de)
JP (1) JP4539752B2 (de)
CN (1) CN101556917B (de)
AT (1) ATE482475T1 (de)
DE (1) DE602009000219D1 (de)
TW (1) TW200945452A (de)

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GB2487531A (en) * 2011-01-20 2012-08-01 Sharp Kk Substrate system consisting of a metamorphic transition region comprising a laminate of AlxGa1-x N and the same material as the substrate.
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CN102208500A (zh) * 2011-05-20 2011-10-05 武汉迪源光电科技有限公司 一种led外延生长方法和led外延结构
US20130023079A1 (en) * 2011-07-20 2013-01-24 Sang Won Kang Fabrication of light emitting diodes (leds) using a degas process
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JP5883331B2 (ja) 2012-01-25 2016-03-15 住友化学株式会社 窒化物半導体エピタキシャルウェハの製造方法及び電界効果型窒化物トランジスタの製造方法
WO2013132812A1 (ja) 2012-03-05 2013-09-12 パナソニック株式会社 窒化物半導体発光素子、光源及びその製造方法
FR3001334B1 (fr) * 2013-01-24 2016-05-06 Centre Nat De La Rech Scient (Cnrs) Procede de fabrication de diodes blanches monolithiques
TWI612686B (zh) * 2014-09-03 2018-01-21 晶元光電股份有限公司 發光元件及其製造方法
TWI714891B (zh) * 2014-09-03 2021-01-01 晶元光電股份有限公司 發光元件及其製造方法
TWI641160B (zh) * 2014-09-03 2018-11-11 晶元光電股份有限公司 發光元件及其製造方法
KR102238195B1 (ko) 2014-11-07 2021-04-07 엘지이노텍 주식회사 자외선 발광소자 및 조명시스템
CN106972083B (zh) * 2017-02-17 2019-02-12 华灿光电（浙江）有限公司 一种发光二极管的外延片的制备方法
CN107634128A (zh) * 2017-09-14 2018-01-26 厦门三安光电有限公司 氮化物半导体元件
JP7095498B2 (ja) * 2018-08-31 2022-07-05 住友電気工業株式会社 垂直共振型面発光レーザ、垂直共振型面発光レーザを作製する方法
CZ2018563A3 (cs) * 2018-10-22 2019-10-30 Fyzikální Ústav Av Čr, V. V. I. Způsob výroby epitaxní struktury s InGaN kvantovými jamami
CN113394313B (zh) * 2020-03-13 2022-12-27 华为技术有限公司 一种led芯片及其制作方法、显示模组、终端
CN113036600B (zh) * 2021-03-04 2022-08-02 东莞理工学院 一种氮化镓基绿光激光器及其制备方法
CN113270525A (zh) * 2021-04-30 2021-08-17 广东德力光电有限公司 一种绿光外延结构的制备方法
CN114481088B (zh) * 2022-04-18 2022-07-01 苏州长光华芯光电技术股份有限公司 一种超晶格有源层及半导体发光结构的制作方法
CN114975698B (zh) * 2022-06-02 2025-12-02 中国科学院苏州纳米技术与纳米仿生研究所 一种生长多量子阱的方法、多量子阱
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Also Published As

Publication number Publication date
CN101556917B (zh) 2013-01-09
DE602009000219D1 (de) 2010-11-04
EP2124266B1 (de) 2010-09-22
US8173458B2 (en) 2012-05-08
JP2009253164A (ja) 2009-10-29
JP4539752B2 (ja) 2010-09-08
EP2124266A1 (de) 2009-11-25
TW200945452A (en) 2009-11-01
US20090258452A1 (en) 2009-10-15
CN101556917A (zh) 2009-10-14

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