CN106169526B - 一种氮化物发光二极管 - Google Patents
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Abstract
本发明公开了一种氮化物发光二极管,包括:衬底,N型氮化物,多量子阱,V‑pits,应力控制层,P型氮化物,以及P型接触层,其中多量子阱区域的V‑pits两侧和/或上方至少具有一应力控制层,通过调节所述应力控制层的张应力或压应力,从而给V‑Pits的侧壁施加张应力或压应力,控制V‑pits的开角θ,调控V‑pits对多量子阱MQW发出光的反射效率,降低全反射角对出光的影响,提升光提取效率,提升氮化物发光二极管的发光强度和发光效率。
Description
技术领域
本发明涉及半导体光电器件领域,特别是一种可调控V-pits开角的氮化物发光二极管。
背景技术
现今,发光二极管(LED),特别是氮化物发光二极管因其较高的发光效率,在普通照明领域已取得广泛的应用。因氮化物发光二极管的底层存在缺陷,导致生长量子阱时缺陷延伸会形成V-pits。V-pits的侧壁的势垒大于多量子阱的势垒,导致电子不易跃迁进入V-pits的缺陷非辐射复合中心,同时,V-pits侧壁可对多量子阱发出的光进行反射,改变发光角度,降低全反射角对出光影响,提升光提取效率,提升发光效率和发光强度。然而,不同的V-pits的开角对量子阱发出光的反射光路不同,直接影响发光角度和光提取效率,因此,有必要提出一种可调控V-pits开角的氮化物发光二极管。
发明内容
针对上述技术问题,本发明的目的在于:提供一种可调控V-pits开角的氮化物发光二极管,包括:衬底,N型氮化物,多量子阱,V-pits,应力控制层, P型氮化物,以及 P型接触层,其中多量子阱区域的V-pits两侧和/或上方至少具有一应力控制层,通过调节所述应力控制层的张应力或压应力,从而给V-Pits的侧壁施加张应力或压应力,控制V-pits的开角θ,调控V-pits对多量子阱MQW发出光的反射效率,降低全反射角对出光的影响,提升光提取效率,提升氮化物发光二极管的发光强度和发光效率。
进一步地,所述的多量子阱区域的V-pits两侧具有第一应力控制层和第二应力控制层。
进一步地,所述的多量子阱区域的V-pits上方填充第三应力控制层。
进一步地,所述的应力控制层材料为晶格常数小于或大于多量子阱的化合物半导体或金属或绝缘体或磁致弹性伸缩材料。
进一步地,藉由应力控制层材料的晶格常数与多量子阱的晶格常数的差异,对V-pits的侧壁形成的张应力/压应力。
进一步地,所述应力控制层材料为磁致弹性伸缩材料时,将发光二极管置于磁场中,藉由磁场控制磁致弹性压应力材料对V-pits的侧壁形成的张应力/压应力。
进一步地,所述的第一、第二应力控制层材料与第三应力控制层材料对V-pits施加相反的应力,使应力叠加,从而更有效地控制V-pits的开角θ。
进一步地,所述的应力控制层可控制V-pits的开角θ的范围为0~90°。
附图说明
图1为本发明实施例的传统氮化物发光二极管多量子阱V-pits示意图。
图2为本发明实施例的氮化物发光二极管V-pits的示意图。
图3为本发明实施例的氮化物发光二极管的对V-pits侧壁的两侧施加张应力,使其开角变大的示意图。
图4为本发明实施例的氮化物发光二极管的对V-pits侧壁的两侧施加压应力,使其开角变小的示意图。
图5为本发明实施例的氮化物发光二极管的对V-pits侧壁的两侧施加张应力,使其开角变大的示意图。
图示说明:100:衬底,101:缓冲层,102:N型氮化物,103:多量子阱,104:V-pits,105:第一应力控制层,106:第二应力控制层,107:第三应力控制层,108:P型氮化物,109:P型接触层。
具体实施方式
传统的氮化物发光二极管,因晶格失配和热失配在氮化物生长过程中会形成缺陷,生长多量子阱时该位错会延伸形成V-pits,如图1所示;因V-pits的侧壁的势垒大于多量子阱的势垒,导致电子不易跃迁进入V-pits的缺陷非辐射复合中心,同时,V-pits侧壁可对多量子阱发出的光进行反射,可改变发光角度,降低全反射角对出光影响,提升光提取效率,提升发光效率和发光强度。然而,不同的V-pits的开角对量子阱发出光的反射光路不同,直接影响发光角度和光提取效率。因此,选择合适的V-pits开角可以极大地提升光提取效率。
本案提出一种可调控V-pits开角的氮化物发光二极管,如图2所示,依次包括:衬底100,缓冲层101,N型氮化物102,多量子阱103,V-pits 104,第一应力控制层105,第二应力控制层106,第三应力控制层107,P型氮化物108,P型接触层109。
实施例1
对V-Pits侧壁两侧施加张应力,使其开角变大。首先,在蓝宝石衬底100上依次外延生长缓冲层101,N型氮化物102,多量子阱103,多量子阱因位错延伸产生V-pits 104;然后,将生长完量子阱的外延片取出,进行光刻和蒸镀,在V-pits的两侧沉积晶格常数较多量子阱小的材料,形成第一应力控制层105和第二应力控制层106;接着,在V-pits的上方填充沉积晶格常数较多量子阱大的材料,形成第三应力控制层107;最后,依次沉积P型氮化物108和P型接触角层109。第一、第二、第三应力控制层对V-pits的侧壁形成拉伸应力,使V-pits的开角角度变大,如图3所示。通过控制V-pits的开角角度θ,调节光在多量子阱中的反射效应,有效地改善光在多量子阱区域的传输路径,提升氮化物发光二极管的发光效率和发光强度。
实施例2
对V-Pits侧壁两侧施加压应力,使其开角变小。首先,在蓝宝石衬底100上依次外延生长缓冲层101,N型氮化物102,多量子阱103,多量子阱因位错延伸产生V-pits 104;然后,将长完量子阱的外延片取出,进行光刻和蒸镀,在V-pits的两侧沉积晶格常数较多量子阱大的材料,形成第一应力控制层105和第二应力控制层106;接着,在V-pits的上方填充沉积晶格常数较多量子阱小的材料,形成第三应力控制层107;最后,依次沉积P型氮化物108和P型接触角层109。第一、第二、第三应力控制层对V-pits的侧壁形成压缩应力,使V-pits的开角角度变小,如图4所示。通过控制V-pits的开角角度θ,调节光在多量子阱中的反射效应,有效地改善光在多量子阱区域的传输路径,提升氮化物发光二极管的发光效率和发光强度。
实施例3
应力控制层通过磁致弹性应力控制V-Pits侧壁两侧的张应力,使其开角变大。首先,在蓝宝石衬底100上依次外延生长缓冲层101,N型氮化物102,多量子阱103,多量子阱因位错延伸产生V-pits 104;然后,将长完量子阱的外延片取出,进行光刻和蒸镀,在V-pits的两侧沉积磁致弹性压应力的材料,形成第一应力控制层105和第二应力控制层106;接着,在V-pits的上方填充沉积磁致弹性张应力的材料,形成第三应力控制层107;最后,依次沉积P型氮化物108和P型接触角层109。将氮化物发光二极管放在磁场中,通过磁场控制V-pits两侧的第一、第二应力控制层的磁致弹性压应力材料对V-pits的侧壁形成张应力,而V-pits上方的第三应力控制层的磁致弹性张应力材料对侧壁亦形成张应力,从而对V-pits的侧壁形成拉伸应力,使V-pits的开角角度变大,如图5所示。通过控制V-pits的开角角度θ,调节光在多量子阱中的反射效应,有效地改善光在多量子阱区域的传输路径,提升氮化物发光二极管的发光效率和发光强度。
以上实施方式仅用于说明本发明,而并非用于限定本发明,本领域的技术人员,在不脱离本发明的精神和范围的情况下,可以对本发明做出各种修饰和变动,因此所有等同的技术方案也属于本发明的范畴,本发明的专利保护范围应视权利要求书范围限定。
Claims (7)
1.一种氮化物发光二极管,包括:衬底,N型氮化物,多量子阱,V-pits,应力控制层,P型氮化物,以及P型接触层,其中位于多量子阱区域的V-pits两侧具有第一应力控制层和第二应力控制层,V-pits上方填充第三应力控制层,从而给V-Pits的侧壁施加张应力或压应力,控制V-pits的开角θ。
2.根据权利要求1所述的一种氮化物发光二极管,其特征在于:位于所述多量子阱区域的V-pits两侧的应力控制层材料与所述多量子阱区域的V-pits上方的应力控制层对V-pits施加相反的应力,使应力叠加,调控所述V-pits的开角θ。
3.根据权利要求1所述的一种氮化物发光二极管,其特征在于:所述应力控制层材料为化合物半导体或金属或绝缘体或磁致弹性伸缩材料。
4.根据权利要求1所述的一种氮化物发光二极管,其特征在于:所述应力控制层材料的晶格常数小于或大于多量子阱的晶格常数。
5.根据权利要求4所述的一种氮化物发光二极管,其特征在于:藉由应力控制层材料的晶格常数与多量子阱的晶格常数的差异,对V-pits的侧壁形成的张应力/压应力。
6.根据权利要求3所述的一种氮化物发光二极管,其特征在于:所述应力控制层材料为磁致弹性伸缩材料时,将发光二极管置于磁场中,藉由磁场控制磁致弹性压应力材料对V-pits的侧壁形成的张应力/压应力。
7.根据权利要求1所述的一种氮化物发光二极管,其特征在于:所述应力控制层控制V-pits的开角θ的范围为0~90°。
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