DE602009000219D1 - Verfahren zur Bildung einer Quantentopfstruktur und Verfahren zur Herstellung eines lichtemittierenden Halbleiterelements - Google Patents

Verfahren zur Bildung einer Quantentopfstruktur und Verfahren zur Herstellung eines lichtemittierenden Halbleiterelements

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Publication number
DE602009000219D1
DE602009000219D1 DE602009000219T DE602009000219T DE602009000219D1 DE 602009000219 D1 DE602009000219 D1 DE 602009000219D1 DE 602009000219 T DE602009000219 T DE 602009000219T DE 602009000219 T DE602009000219 T DE 602009000219T DE 602009000219 D1 DE602009000219 D1 DE 602009000219D1
Authority
DE
Germany
Prior art keywords
forming
quantum well
light emitting
manufacturing
emitting element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602009000219T
Other languages
English (en)
Inventor
Yohei Enya
Yusuke Yoshizumi
Masaki Ueno
Fumitake Nakanishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Publication of DE602009000219D1 publication Critical patent/DE602009000219D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02389—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/02433—Crystal orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
DE602009000219T 2008-04-09 2009-04-06 Verfahren zur Bildung einer Quantentopfstruktur und Verfahren zur Herstellung eines lichtemittierenden Halbleiterelements Active DE602009000219D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008101781A JP4539752B2 (ja) 2008-04-09 2008-04-09 量子井戸構造の形成方法および半導体発光素子の製造方法

Publications (1)

Publication Number Publication Date
DE602009000219D1 true DE602009000219D1 (de) 2010-11-04

Family

ID=40911598

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602009000219T Active DE602009000219D1 (de) 2008-04-09 2009-04-06 Verfahren zur Bildung einer Quantentopfstruktur und Verfahren zur Herstellung eines lichtemittierenden Halbleiterelements

Country Status (7)

Country Link
US (1) US8173458B2 (de)
EP (1) EP2124266B1 (de)
JP (1) JP4539752B2 (de)
CN (1) CN101556917B (de)
AT (1) ATE482475T1 (de)
DE (1) DE602009000219D1 (de)
TW (1) TW200945452A (de)

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TWI442455B (zh) 2010-03-29 2014-06-21 Soitec Silicon On Insulator Iii-v族半導體結構及其形成方法
GB2487531A (en) * 2011-01-20 2012-08-01 Sharp Kk Substrate system consisting of a metamorphic transition region comprising a laminate of AlxGa1-x N and the same material as the substrate.
JP5113305B2 (ja) 2011-01-21 2013-01-09 パナソニック株式会社 窒化ガリウム系化合物半導体発光素子および当該発光素子を備える光源
CN102208500A (zh) * 2011-05-20 2011-10-05 武汉迪源光电科技有限公司 一种led外延生长方法和led外延结构
US20130023079A1 (en) * 2011-07-20 2013-01-24 Sang Won Kang Fabrication of light emitting diodes (leds) using a degas process
WO2013046564A1 (ja) 2011-09-29 2013-04-04 パナソニック株式会社 窒化物半導体発光素子およびｌｅｄシステム
JP5883331B2 (ja) * 2012-01-25 2016-03-15 住友化学株式会社 窒化物半導体エピタキシャルウェハの製造方法及び電界効果型窒化物トランジスタの製造方法
WO2013132812A1 (ja) 2012-03-05 2013-09-12 パナソニック株式会社 窒化物半導体発光素子、光源及びその製造方法
FR3001334B1 (fr) * 2013-01-24 2016-05-06 Centre Nat De La Rech Scient (Cnrs) Procede de fabrication de diodes blanches monolithiques
TWI714891B (zh) * 2014-09-03 2021-01-01 晶元光電股份有限公司 發光元件及其製造方法
TWI641160B (zh) * 2014-09-03 2018-11-11 晶元光電股份有限公司 發光元件及其製造方法
TWI612686B (zh) * 2014-09-03 2018-01-21 晶元光電股份有限公司 發光元件及其製造方法
KR102238195B1 (ko) * 2014-11-07 2021-04-07 엘지이노텍 주식회사 자외선 발광소자 및 조명시스템
CN106972083B (zh) * 2017-02-17 2019-02-12 华灿光电（浙江）有限公司 一种发光二极管的外延片的制备方法
CN107634128A (zh) * 2017-09-14 2018-01-26 厦门三安光电有限公司 氮化物半导体元件
JP7095498B2 (ja) * 2018-08-31 2022-07-05 住友電気工業株式会社 垂直共振型面発光レーザ、垂直共振型面発光レーザを作製する方法
CZ2018563A3 (cs) * 2018-10-22 2019-10-30 Fyzikální Ústav Av Čr, V. V. I. Způsob výroby epitaxní struktury s InGaN kvantovými jamami
CN113394313B (zh) * 2020-03-13 2022-12-27 华为技术有限公司 一种led芯片及其制作方法、显示模组、终端
CN113036600B (zh) * 2021-03-04 2022-08-02 东莞理工学院 一种氮化镓基绿光激光器及其制备方法
CN113270525A (zh) * 2021-04-30 2021-08-17 广东德力光电有限公司 一种绿光外延结构的制备方法
CN114481088B (zh) * 2022-04-18 2022-07-01 苏州长光华芯光电技术股份有限公司 一种超晶格有源层及半导体发光结构的制作方法
CN116344693B (zh) * 2023-05-31 2023-09-08 江西兆驰半导体有限公司 一种高光效发光二极管外延片及其制备方法

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JP2005268581A (ja) * 2004-03-19 2005-09-29 Matsushita Electric Ind Co Ltd 窒化ガリウム系化合物半導体発光素子
EP1583190B1 (de) * 2004-04-02 2008-12-24 Nichia Corporation Nitrid-Halbleiterlaservorrichtung
KR100513923B1 (ko) * 2004-08-13 2005-09-08 재단법인서울대학교산학협력재단 질화물 반도체층을 성장시키는 방법 및 이를 이용하는 질화물 반도체 발광소자
US7339255B2 (en) * 2004-08-24 2008-03-04 Kabushiki Kaisha Toshiba Semiconductor device having bidirectionally inclined toward <1-100> and <11-20> relative to {0001} crystal planes
DE112005002319T5 (de) * 2004-09-28 2007-08-23 Sumitomo Chemical Co., Ltd. Gruppe-III-V-Verbindungshalbleiter und Verfahren zur Herstellung desselben
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JP2006332258A (ja) * 2005-05-25 2006-12-07 Matsushita Electric Ind Co Ltd 窒化物半導体装置及びその製造方法
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Also Published As

Publication number Publication date
EP2124266A1 (de) 2009-11-25
EP2124266B1 (de) 2010-09-22
US20090258452A1 (en) 2009-10-15
JP4539752B2 (ja) 2010-09-08
ATE482475T1 (de) 2010-10-15
TW200945452A (en) 2009-11-01
CN101556917B (zh) 2013-01-09
CN101556917A (zh) 2009-10-14
JP2009253164A (ja) 2009-10-29
US8173458B2 (en) 2012-05-08

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