JP2009253164A - 量子井戸構造の形成方法および半導体発光素子の製造方法 - Google Patents
量子井戸構造の形成方法および半導体発光素子の製造方法 Download PDFInfo
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- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims abstract description 36
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 claims abstract description 30
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- 229910052738 indium Inorganic materials 0.000 claims description 21
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 20
- 150000004767 nitrides Chemical class 0.000 claims description 10
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical group [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 7
- 229910052733 gallium Inorganic materials 0.000 claims description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
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Abstract
【解決手段】GaN基板40の主面上に障壁層43,45,47,及び49と井戸層44,46,及び48とを交互に成長させることにより量子井戸構造(活性層50)を形成する工程において、InGaNを成長させることにより各井戸層を形成し、各障壁層の成長温度を第1の温度とし、各井戸層の成長温度を第1の温度より低い第2の温度とし、各井戸層を成長させる際に、Ga原料ガス(トリメチルガリウム)の供給を開始する前に予めInの原料ガスを供給しておく。
【選択図】図5
Description
次に、高いIn組成の井戸層を有する緑色発光ダイオード構造を製造する方法の一実施例について説明する。
Claims (12)
- 窒化ガリウム基板の(0001)面に対して傾斜した主面上に障壁層および井戸層を交互に成長させることにより量子井戸構造を形成する工程を備え、
前記工程において、インジウムおよび他のIII族元素を有するIII族窒化物半導体を成長させることにより前記井戸層を形成し、
前記障壁層の成長温度を第1の温度とし、
前記井戸層の成長温度を前記第1の温度より低い第2の温度とし、
前記井戸層を成長させる際に、前記他のIII族元素の原料ガスの供給を開始する前に予めインジウムの原料ガスを供給しておくことを特徴とする、量子井戸構造の形成方法。 - 前記他のIII族元素の原料ガスの供給を開始する前に、インジウムの前記原料ガスとともに窒素の原料ガスを供給することを特徴とする、請求項1に記載の量子井戸構造の形成方法。
- 前記井戸層を成長させる際に、基板温度が前記第2の温度に達してからインジウムの前記原料ガスの供給を開始することを特徴とする、請求項1又は2のいずれか一項に記載の量子井戸構造の形成方法。
- 前記他のIII族元素がガリウムであることを特徴とする、請求項1〜3のいずれか一項に記載の量子井戸構造の形成方法。
- インジウムの前記原料ガスがトリメチルインジウムであり、ガリウムの前記原料ガスがトリメチルガリウムであることを特徴とする、請求項4に記載の量子井戸構造の形成方法。
- 前記井戸層のIn組成が15%以上であることを特徴とする、請求項1〜5のいずれか一項に記載の量子井戸構造の形成方法。
- 発光波長が450[nm]以上650[nm]以下である半導体発光素子の製造方法であって、
窒化ガリウム基板の(0001)面に対して傾斜した主面上に障壁層および井戸層を交互に成長させることにより量子井戸活性層を形成する工程を備え、
前記工程において、インジウムおよび他のIII族元素を有するIII族窒化物半導体を成長させることにより前記井戸層を形成し、
前記障壁層の成長温度を第1の温度とし、
前記井戸層の成長温度を前記第1の温度より低い第2の温度とし、
前記井戸層を成長させる際に、前記他のIII族元素の原料ガスの供給を開始する前に予めインジウムの原料ガスを供給しておくことを特徴とする、半導体発光素子の製造方法。 - 前記他のIII族元素の原料ガスの供給を開始する前に、インジウムの前記原料ガスとともに窒素の原料ガスを供給することを特徴とする、請求項7に記載の半導体発光素子の製造方法。
- 前記井戸層を成長させる際に、基板温度が前記第2の温度に達してからインジウムの前記原料ガスの供給を開始することを特徴とする、請求項7又は8のいずれか一項に記載の半導体発光素子の製造方法。
- 前記他のIII族元素がガリウムであることを特徴とする、請求項7〜9のいずれか一項に記載の半導体発光素子の製造方法。
- インジウムの前記原料ガスがトリメチルインジウムであり、ガリウムの前記原料ガスがトリメチルガリウムであることを特徴とする、請求項10に記載の半導体発光素子の製造方法。
- 前記井戸層のIn組成が15%以上であることを特徴とする、請求項7〜11のいずれか一項に記載の半導体発光素子の製造方法。
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JP2008101781A JP4539752B2 (ja) | 2008-04-09 | 2008-04-09 | 量子井戸構造の形成方法および半導体発光素子の製造方法 |
TW098111047A TW200945452A (en) | 2008-04-09 | 2009-04-02 | Method for forming quantum well structure and method for manufacturing semiconductor light emitting element |
US12/417,857 US8173458B2 (en) | 2008-04-09 | 2009-04-03 | Method for forming quantum well structure and method for manufacturing semiconductor light emitting element |
EP09005065A EP2124266B1 (en) | 2008-04-09 | 2009-04-06 | Method for forming quantum well structure and method for manufacturing semiconductor light emitting element |
DE602009000219T DE602009000219D1 (de) | 2008-04-09 | 2009-04-06 | Verfahren zur Bildung einer Quantentopfstruktur und Verfahren zur Herstellung eines lichtemittierenden Halbleiterelements |
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CN200910134808.8A CN101556917B (zh) | 2008-04-09 | 2009-04-09 | 形成量子阱结构的方法和制造半导体发光元件的方法 |
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Also Published As
Publication number | Publication date |
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DE602009000219D1 (de) | 2010-11-04 |
EP2124266B1 (en) | 2010-09-22 |
CN101556917A (zh) | 2009-10-14 |
ATE482475T1 (de) | 2010-10-15 |
JP4539752B2 (ja) | 2010-09-08 |
US20090258452A1 (en) | 2009-10-15 |
EP2124266A1 (en) | 2009-11-25 |
US8173458B2 (en) | 2012-05-08 |
CN101556917B (zh) | 2013-01-09 |
TW200945452A (en) | 2009-11-01 |
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