JP5896442B2 - Iii族窒化物膜の成長方法 - Google Patents
Iii族窒化物膜の成長方法 Download PDFInfo
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Description
本出願は米国特許法第119条(e)に基づいて、本発明の譲受人に譲渡された以下の同時係属の米国特許出願の優先権を主張するものである。
ジョン・ケディング(John Kaeding)、マイケル・イザ(Michael Iza)、トロイ・J.ベーカー(Troy J.Baker)、佐藤均(Hitoshi Sato)、ベンジャミン・A.ハスケル(Benjamin A.Haskell)、ジェームス・S.スペック(James S.Speck)、スティーブン・P.デンバース(Steven P.DenBaars)、および中村修二(Shuji Nakamura)による米国特許仮出願第60/760,739号、2006年1月20日出願、発明の名称「半極性(Al,In,Ga,B)Nの成長の改良法(METHOD FOR IMPROVED GROWTH OF SEMIPOLAR (Al,In,Ga,B)N)」、代理人整理番号 30794.150−US−P1(2006−126);
この出願は参照として本明細書に組み込まれているものとする。
トロイ・J.ベーカー、ベンジャミン・A.ハスケル、ポール・T.フィニ(Paul T.Fini)、スティーブン・P.デンバース、ジェームス・S.スペック、および中村修二による米国特許出願第11/372,914号、2006年3月10日出願、発明の名称「平坦な半極性窒化ガリウムの成長技術(TECHNIQUE FOR THE GROWTH OF PLANAR SEMI−POLAR GALLIUM NITRIDE)」、代理人整理番号30794.128−US−Ul(2005−471);この出願は米国特許第119条(e)に基づいて次の出願の優先権を主張するものである。トロイ・J.ベーカー、ベンジャミン・A.ハスケル、ポール・T.フィニ、スティーブン・P.デンバース、ジェームス・S.スペック、および中村修二による米国特許仮出願第60/660,283号、2005年3月10日出願、発明の名称「平坦な半極性窒化ガリウムの成長技術(TECHNIQUE FOR THE GROWTH OF PLANAR SEMI−POLAR GALLIUM NITRIDE)」、代理人整理番号30794.128−US−Pl(2005−471)。
これらすべての出願は参照として本明細書に組み込まれているものとする。
本発明は半極性(Al,In,Ga,B)Nの成長の改良法に関するものである。
(この出願は本明細書を通して、例えば[x]のように、1つ以上の参照番号を括弧内に示した多くの異なる刊行物と特許文献を参照する。この参照番号順に並べたこれら異なる刊行物と特許文献のリストは以下の「参考文献」と題されたセクションに見出すことができる。これらの刊行物と特許文献のそれぞれは参照として本明細書に組み込まれているものとする。)
Nishizuka,K.,Applied Physics Letters,Vol.85 Number 15,11 October 2004. M.Funato,M.Ueda,Y.Kawakami,Y.Naruka,T.Kosugi,M.Takahashi,and T.Mukai,Japn.J.of Appl.Phys.45,L659(2006). K.Hiramatsu,H.Amano,I.Akasaki,H.Kato,N.Koide,and K.Manabe,J.of Cryst.Growth 107,509(1991). P.A.Grudowski,A.L.Holmes,C.J.Eiting,and R.D.Dupuis,Appl.Phys.Lett.69,3626(1996). J.F.Kaeding,Ph.D.Thesis,University of California,Santa Barbara,January 2007."The heteroepitaxial growth of semipolar GaN for Light Emitting Diodes."
以下、図面を参照し、対応する部分には一貫して同じ参照番号を付与する。
概要
技術的な説明
処理工程
可能な変更と変形
利点と改良点
参考文献
[1]Nishizuka,K.,Applied Physics Letters,Vol.85 Number 15,11 October 2004.
この論文はELO材料の{11−22}GaN側壁の研究である。
[2]M.Funato,M.Ueda,Y.Kawakami,Y.Naruka,T.Kosugi,M.Takahashi,and T.Mukai,Japn.J.of Appl.Phys.45,L659(2006).
この論文はバルク半極性GaN上に成長した半極性発光ダイオードの成長について記載している。
[3]K.Hiramatsu,H.Amano,I.Akasaki,H.Kato,N.Koide,and K.Manabe,J.of Cryst.Growth 107,509(1991).
この論文は極性GaNの表面形態を改善するためにミスカットした基板を用いることについて記載している。
[4]P.A.Grudowski,A.L.Holmes,C.J.Eiting,and R.D.Dupuis,Appl.Phys.Lett.69,3626(1996).
この論文は極性GaNのホトルミネッセンスを改良するためにミスカットした基板を用いることについて記載している。
[5]H.Amano,N.Sawaki,I.Akasaki,and Y.Toyoda,Applied Physics Letters Vol.48(1986)pp.353.
この論文はGaN結晶品質の改良のためにAlNバッファ層を用いることについて記載している。
[6]S.Nakamura,Japanese Journal of Applied Physics Vol.30,No.10,October,1991,pp.L1705−L1707.
この論文はGaN結晶品質の改善のためにGaNバッファ層を用いることについて記載している。
[7]D.D.Koleske,M.E.Coltrin,K.C.Cross,C.C.Mitchell,A.A.Allerman,Journal of Crystal Growth Vol.273(2004)pp.86−99.
この論文はサファイヤ基板上のGaNバッファ層の形態発達の効果について記載している。
[8]B.Moran,F.Wu,A.E.Romanov,U.K.Mishra,S.P.Denbaars,J.S.Speck,Journal of Crystal Growth Vol.273(2004)pp.38−47.
この論文は炭化珪素基板上のAlNバッファ層の形態発達の効果について記載している。
[9]米国特許第4,855,249号、1989年8月8日発行、発明者Akasakiら、発明の名称“Process for growing III−V compound semiconductors on sapphire using a buffer layer”.
[10]米国特許第5,741,724号、1998年4月21日発行、発明者Ramdaniら、発明の名称“Method of growing gallium nitride on a spinel substrate”.
[11]J.F.Kaeding,Ph.D.Thesis,University of California,Santa Barbara,January 2007.“ The heteroepitaxial growth of semipolar GaN for Light Emitting Diodes.”
この研究は半極性GaNの成長のためにミスカットした基板を用いることについて記載しているものである。
結論
これで本発明の好ましい実施形態の説明を終える。本発明の一つ以上の実施形態に関する上記の記述は、例示と説明を目的としてなされたものである。開示の形態そのものによって本発明を包括または限定することを意図するものではない。上記の教示に照らして多くの変更と変形が可能である。本発明の範囲はこの詳細な説明によって限定されるものではなく、本明細書に添付の請求項によって限定されるものである。
Claims (16)
- III族窒化物膜を成長するための方法であって、
(a){100}MgAl2 O4 スピネル基板のミスカットした表面を形成するステップであって、該ミスカットした表面が<011>方向に0.5°〜3°の範囲のミスカット角度βを備えるステップと、
(b)前記基板の前記ミスカットした表面上に半極性{10−11}窒化ガリウム膜を成長するステップを備え、
前記半極性{10−11}窒化ガリウム膜の上面は平坦で少なくとも幅10μmであり、
前記半極性{10−11}窒化ガリウム膜は、x線回折により測定される半値全幅(FWHM)が0.55°未満であるロッキング・カーブにより特徴づけられる結晶品質を有することを特徴とする方法。 - III族窒化物膜を成長するための方法であって、
(a){1−100}Al2 O3 サファイヤ基板のミスカットした表面を形成するステップであって、該ミスカットした表面が<0001>方向に0.5°〜1°の範囲のミスカット角度βを備えるステップと、
(b)前記基板の前記ミスカットした表面上に半極性{11−22}窒化ガリウム膜を成長するステップを備え、
前記半極性{11−22}窒化ガリウム膜の上面は平坦で少なくとも幅10μmであり、
前記半極性{11−22}窒化ガリウム膜は、x線回折により測定される半値全幅(FWHM)が0.55°未満であるロッキング・カーブにより特徴づけられる結晶品質を有することを特徴とする方法。 - 前記半極性{11−22}窒化ガリウム膜は、該半極性{11−22}窒化ガリウム膜上に作製された発光ダイオードが220μWより大きい出力で発光するような結晶品質を有することを特徴とする、請求項2に記載の方法。
- 前記ミスカット角度は、前記半極性窒化ガリウム膜の以下の諸特性、すなわちエピタキシャル関係、結晶対象性、層の極性、転位密度、表面形態および電気的特性、の少なくとも1つに影響を与えるように選ばれることを特徴とする、請求項1または2に記載の方法。
- 前記ミスカット角度の大きさは成膜条件に依存して変化することを特徴とする、請求項1または2に記載の方法。
- 前記半極性窒化ガリウム膜の成長表面は、幅10μmより大きく、故意にミスカットした前記基板の表面に実質的に平行であることを特徴とする、請求項1または2に記載の方法。
- 前記ミスカットした表面は、前記半極性窒化ガリウム膜の対称性に整合するように前記基板の対称性を低下させることを特徴とする、請求項1または2に記載の方法。
- 前記半極性窒化ガリウム膜は、単一の結晶学的ドメインを含むことを特徴とする、請求項1に記載の方法。
- 前記{11−22}窒化ガリウム膜上に作製される発光デバイスが、少なくとも50μWの出力パワーで発光することを特徴とする、請求項2に記載の方法。
- 前記ミスカットした基板は、前記半極性窒化ガリウム膜の成長のための優先的核生成サイトとしての役割を果たすステップ・エッジまたはキンクを提供することを特徴とする、請求項1または2に記載の方法。
- 前記優先的核生成サイトは、ミスカットしていない基板上での成膜に比べて、核の良好な合体、欠陥密度の低減、より滑らかでより平坦な界面または表面を含む層の特性の改良を提供するものであることを特徴とする、請求項10に記載の方法。
- 前記ミスカットした基板上に成膜した前記半極性窒化ガリウム膜は、ミスカットしていない基板上に成膜した半極性窒化ガリウム膜に比べて、よりよい結晶性とより少ない貫通転位とをもつことを特徴とする、請求項1または2に記載の方法。
- 前記半極性窒化ガリウム膜の巨視的表面凹凸およびファセット形成は、ミスカット角度の増加とともに減少することを特徴とする、請求項1または2に記載の方法。
- (1)前記基板をミスカットするステップと、
(2)前記基板を反応装置内に装填するステップと、
(3)窒素、水素またはアンモニアの少なくとも1つを含む流れのもとで前記基板を加熱するステップと、
(4)前記加熱された基板上に前記半極性窒化ガリウム膜を成膜するステップとをさらに備えることを特徴とする、請求項1または2に記載の方法。 - 前記成膜するステップ(4)は、
(i)前記加熱された基板上に核生成層またはバッファ層を成膜するステップと、
(ii)前記核生成層またはバッファ層上に半極性窒化ガリウム半導体膜を成膜するステップと、
を備えることを特徴とする、請求項14に記載の方法。 - III族窒化物膜を成長するための方法であって、
(a){1−100}Al2 O3 サファイヤ基板のミスカットした表面を形成するステップであって、該ミスカットした表面が<0001>方向に0.5°〜1°の範囲のミスカット角度βを備えるステップと、
(b)前記基板の前記ミスカットした表面上に半極性{11−22}窒化ガリウム膜を成長するステップを備え、
前記半極性{11−22}窒化ガリウム膜は平坦な単結晶で、該半極性{11−22}窒化ガリウム膜上に作製される発光デバイス構造は220μWより大きい出力パワーで発光することを特徴とする方法。
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US8368179B2 (en) | 2013-02-05 |
KR101510461B1 (ko) | 2015-04-08 |
JP2014220524A (ja) | 2014-11-20 |
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