TWI460322B - 藉由氨熱生長法自初始第iii族氮化物種產生具改良結晶度之第iii族氮化物晶體之方法 - Google Patents
藉由氨熱生長法自初始第iii族氮化物種產生具改良結晶度之第iii族氮化物晶體之方法 Download PDFInfo
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Description
本發明係關於第III族氮化物晶圓之生產方法,使用氨熱方法,與鑄錠之切割及加工處理合併,以改良得自初始第III族氮化物晶種之晶體品質。
本申請案係主張關於2009年6月4日提出申請之美國申請案序號61/058,900之優先權益,其標題為"藉由氨熱生長法自初始第III族氮化物種產生具改良結晶度之第III族氮化物晶體之方法",發明人Edward Letts、Tadao Hashimoto及Masanori Ikari,其全部內容係併於本文供參考,猶如完全於下文提出一般。
本申請案係關於下列美國專利申請案:由Kenji Fujito、Tadao Hashimoto及Shuji Nakamura於2005年7月8日提出申請之PCT利用性專利申請案序號US2005/024239,其標題為"使用熱壓鍋在超臨界氨中生長第III族氮化物晶體之方法
",律師案件目錄編號30794.0129-WO-01(2005-339-1);由Tadao Hashimoto、Makoto Saito及Shuji Nakamura於2007年4月6日提出申請之美國利用性專利申請案序號11/784,339,其標題為"關於在超臨界氨中生長大表面積氮化鎵晶體之方法及大表面積氮化鎵晶體
",律師案件目錄編號30794.179-US-U1(2006-204),此申請案係依美國專利法第119(e)款第35條,主張由Tadao Hashimoto、Makoto Saito及Shuji Nakamura於2006年4月7日提出申請之美國臨時專利申請案序號60/790,310之權益,其標題為"關於在超臨界氨中生長大表面積氮化鎵晶體之方法及大表面積氮化鎵晶體
",律師案件目錄編號30794.179-US-P1(2006-204);由Tadao Hashimoto與Shuji Nakamura於2007年9月19日提出申請之美國利用性專利申請案序號60/973,602,其標題為"氮化鎵塊狀晶體及其生長方法
",律師案件目錄編號30794.244-US-P1(2007-809-1);由Tadao Hashimoto於2007年10月25日提出申請之美國利用性專利申請案序號11/977,661,其標題為"關於在超臨界氨與氮之混合物中生長第III族氮化物晶體之方法及藉以生長之第III族氮化物晶體
",律師案件目錄編號30794.253-US-U1(2007-774-2)。
由Tadao Hashimoto、Edward Letts、Masanori Ikari於2008年2月25日提出申請之美國利用性專利申請案序號61/067,117,其標題為"關於產生第III族氮化物晶圓之方法及第III族氮化物晶圓
",律師案件目錄編號62158-30002.00。
該申請案係併於本文供參考。
(註:本專利申請案係參考數件刊物與專利,如以括弧內之編號例如[x]所表示者。此等刊物與專利之清單可參閱標題為"參考資料"之段落)。
氮化鎵(GaN)及其相關第III族合金係為各種光-電子與電子裝置之關鍵材料,譬如發光二極體(LED)、雷射二極體(LD)、微波功率電晶體及日盲光偵測器。目前LED係被廣泛使用於手機、指示器、顯示器,而LD係被使用於資料儲存磁碟驅動器。但是,大部份此等裝置係以外延方式在異質基材上生長,譬如藍寶石與碳化矽。第III族氮化物之異質外延生長會造成高度有缺陷或甚至龜裂之薄膜,其係阻礙高階光學與電子裝置,譬如用於一般照明之高亮度LED或高功率微波電晶體之實現。
在異質外延生長上固有之大部份問題可藉由替代使用同質外延生長,以自大塊第III族氮化物晶體鑄錠所切片之單晶第III族氮化物晶圓用於同質外延而被避免。對大部份裝置而言,單晶GaN晶圓係為有利的,因其相對較容易控制晶圓之導電性,且GaN晶圓將提供與裝置層之最小晶格/熱失配。但是,目前與異質外延基材比較,對於同質生長所需要之GaN晶圓係極端地昂貴。這是由於其高熔點及在高溫下之高氮蒸氣壓,故難以生長第III族氮化物晶體鑄錠。使用熔融態Ga之生長方法,譬如高壓高溫合成[1,2]與鈉助熔劑[3,4],已被提出以生長GaN晶體。雖然如此,使用熔融態Ga所生長之晶體形狀為薄小片狀體,因為熔融態Ga具有氮之低溶解度與氮之低擴散係數。
氨熱方法,其係為使用高壓氨作為溶劑之溶液生長方法,已被用以達成真實大塊GaN鑄錠之成功生長[5]。氨熱生長具有關於生長大GaN晶體鑄錠之潛力,因為高壓氨具有作為流體媒質之優點,包括來源材料譬如GaN多晶體或金屬Ga之高溶解度,及已溶解先質之高輸送速度。
目前,現代化之氨熱方法[6-8]係倚賴種晶以產生大鑄錠。無變形與缺陷之大種晶之缺乏係限制具有直徑為3"或較大之高品質大塊GaN鑄錠之生長。藉由不同方法所產生之數種可能晶種係存在;但是,此等晶種係傾向於很小或有缺陷。例如,2"自由站立GaN晶圓已在藍寶石或SiC基材上,藉由氫化物氣相磊晶法(HVPE)產生。由於在GaN與藍寶石或SiC基材間之大晶格失配,故所形成之GaN生長係被弓形彎曲、變形,且具有大缺陷密度。在藉由HVPE產生之自由站立晶種上之持續生長,典型上會產生有缺陷生長。對照上而言,藉由高壓合成或鈉助熔劑方法所製成之GaN晶體,係傾向於具有高品質但有限大小與利用性。一種改良有缺陷種晶之方法會改良產生適合作為裝置基材使用之大鑄錠之可行性。
為尋求解決關於在可採用有缺陷晶種上生長所固有之問題,本發明係揭示新穎生長方案,包括3種不同方法,以改良藉由氨熱方法所生長之第III族氮化物晶體之晶體品質。由於GaN與典型異質外延基材之晶格失配,故藉由異質外延方法所產生之種晶係顯示沿著+c方向之c-平面晶格之下凹弓形彎曲,具有典型曲率半徑為1米。但是,吾人發現GaN藉由氨熱方法在此種種晶上之隨後生長,會造成在弓形彎曲方向上翻轉。因此,在Ga-極性(0001)表面上之GaN係於張應力下生長,然而在N-極性(000-1)表面上之GaN係於壓縮下生長。在N-極性表面上之壓縮會防止龜裂,且允許連續取向生長。再者,於弓形彎曲方向翻轉之前,吾人可藉由選擇適當生長厚度獲得極平坦晶體。於第III族氮化物鑄錠藉由氨熱方法生長之後,將鑄錠切成晶圓,其厚度係在約0.1毫米與約2毫米之間。藉由在最佳化位置、取向及誤切下自N-極性生長切割,以致切割表面並不沿著晶面,而是對晶面之一個角度下,所形成之晶圓可作為經改良之晶種使用,以供隨後生長,其接著將具有有限之弓形彎曲與降低之應力。
藉由比較,在Ga-極性表面上之生長係傾向於龜裂。獲得具有較低變形與弓形彎曲之晶種之另一種方法,係為在其中龜裂發生之初始鑄錠之Ga-極性(0001)表面上採集小的無裂紋區域。龜裂會減輕在周圍生長區域中之應力。藉由採集減輕應力之此等局部區域之一作為種晶,隨後鑄錠生長會產生經改良之晶體品質,與初始種晶作比較。
最後,係揭示一種方法,以自初始種晶產生具有經改良晶體品質之種晶,且可藉由一系列鑄錠之生長達成,各在具有採集自先前鑄錠之特定晶體取向之晶圓上產生。
於下文較佳具體實施例之說明中,係參考伴隨之附圖,其係構成本文之一部份,且其中係藉由說明方式顯示其中可實施本發明之特殊具體實施例。應明瞭的是,可利用其他具體實施例,且結構改變可在未偏離本發明之範圍下施行。
本發明係提供一種產生第III族氮化物晶圓之方法,主要是第III族氮化物單晶晶圓,其包含至少一種第III族元素B、Al、Ga及In,譬如GaN、AlN及InN。第III族氮化物鑄錠係藉由氨熱方法生長,該方法係利用作為流體媒質之高壓NH3
、含有第III族元素之營養物及第III族氮化物單晶之種晶。高壓NH3
係提供營養物之高溶解度與經溶解先質之高輸送速度。在使第III族氮化物鑄錠生長之後,將鑄錠使用習用方式,譬如經由使用金屬線鋸、切粒鋸以機械方式鋸開,或藉由雷射切割,切成厚度在約0.1毫米與約2毫米間之晶圓。吾人感興趣之III-氮化物晶體結構具有纖維鋅礦晶體結構,具有圖1中所示之重要切割面c、m及a-平面。
在一種情況中,一種生長第III族氮化物晶體之方法包括:
(a)藉由氨熱方法,在最初種晶上生長第III族氮化物鑄錠;
(b)自鑄錠切出晶圓;
(c)使用取自最初種晶之氮極性側之晶圓作為新種晶,以供鑄錠藉由氨熱方法之隨後生長。
第III族氮化物可為例如GaN。
若需要,則最初種晶可使用異質外延沉積製程形成。
此方法亦可包括自隨後生長之鑄錠切下新晶圓,及在新鑄錠之隨後氨熱生長中使用此等新晶圓作為晶種。
因此,此方法可在一些條件下實施,該條件係提供:當與初始種晶比較時,在結晶學晶格沿著切片方向之弓形彎曲上之改良;在新晶種中之變形係自初始種晶降低;結晶度係經改良,勝過初始種晶之結晶度;結晶學晶格沿著切片方向之弓形彎曲係自初始種晶逆轉;結晶學晶格沿著切片方向之弓形彎曲係經改良,勝過初始種晶;在新晶種中之變形係自初始種晶降低;及/或結晶度係自初始種晶改良。
於任何上述情況中,晶圓可在與所生長晶體之c平面錯取向達3至15度之平面上切自鑄錠。
可形成切片,以提供:結晶學晶格沿著切片方向之弓形彎曲係自初始種晶改良;在新晶種中之變形係自初始種晶降低;及/或結晶度係自初始種晶改良。
關於生長第III族氮化物晶體之另一種方法係涉及:
(a)藉由氨熱方法,在最初種晶上生長第III族氮化物鑄錠,直到一些龜裂發生為止;
(b)自鑄錠分離出無裂紋區域;及
(c)使用已分離之區域作為新晶種,以供鑄錠之隨後生長。
第III族氮化物可為例如GaN。
最初種晶可視情況使用異質外延沉積製程形成,以形成第III族氮化物晶體,譬如GaN。
此方法可另外包括自隨後生長之鑄錠切下新晶圓,及在新鑄錠之隨後氨熱生長中使用此等新晶圓作為晶種。
任何此等方法可在一些條件下進行,其中:結晶學晶格沿著切片方向之弓形彎曲係自初始種晶改良;在新晶種中之變形係自初始種晶中之變形降低;及/或結晶度係經改良,勝過初始種晶之結晶度。
晶圓可沿著與c平面錯取向達3至15度之平面自鑄錠切片,且晶圓可視情況在新鑄錠之氨熱生長中作為新晶種材料使用。
生長第III族氮化物晶體之第三種方法可包括:
(a)藉由氨熱方法,在種晶之c-切割面上生長鑄錠至厚度大於5毫米;
(b)將鑄錠沿著a-平面或半極性平面切片,以形成晶種;
(c)使用a-平面或半極性平面晶種,以生長新鑄錠;
(d)將新鑄錠沿著a-平面或半極性平面切片;及
(e)使用未含有初始種晶之任何最初材料之a-平面或半極性平面晶圓,以生長其他新鑄錠。
此方法可使用僅a-平面切片或僅半極性平面切片實施,或此方法可利用一個切片方向對一個鑄錠及另一個切片方向對隨後鑄錠進行。
第III族氮化物可為例如GaN。
於任何此等情況中之方法可進一步包括將在上文步驟(e)中獲得之鑄錠切片,以產生c-平面晶圓。
此方法可在一些條件下進行,其中:結晶學晶格沿著切片方向之弓形彎曲係自初始種晶改良;在新晶種中之變形係自初始種晶降低;及/或結晶度係自初始種晶改良。
可產生GaN晶圓,其中c-平面晶格係以凸方式在+c方向上弓形彎曲。
此等GaN晶圓可具有為c-平面且誤切在10度內之基面。
GaN晶圓可具有為m-平面且誤切在10度內之基面。
GaN晶圓可具有為a-平面且誤切在10度內之基面。
下文其他詳細解釋係描述詳細程序,以幫助進一步瞭解本發明。
具有內徑為1英吋之反應容器係用於氨熱生長。將所有必要來源及內部組件與反應容器一起裝載至手套箱中。在一種生長場合中,此等組件包括被保持在Ni網狀籃子中之10克多晶GaN營養物,0.34毫米厚單晶c-平面GaN晶種,及六個擋板以限制流動。初始GaN晶種係藉由HVPE,在藍寶石上產生,其會造成種晶被彎曲及變形。將手套箱充填氮,且氧與水份濃度係被保持在低於1 ppm下。由於礦物化劑係與氧及水份具反應性,故將礦物化劑一直儲存於手套箱中。使用4克剛收到之NaNH2
作為礦物化劑。將礦物化劑裝填至反應容器中之後,裝載六個擋板以及晶種與營養物。將反應容器之蓋閉合後,將反應容器取出手套箱。然後,將反應容器連接至氣體/真空系統,其可將容器抽氣降壓,以及可供應NH3
至容器。首先,將反應容器以渦輪分子泵抽空,以達成壓力低於1 x 10-5
毫巴。關於此實例所達成之實際壓力為1.2 x 10-6
毫巴。依此方式,部份移除反應容器內壁上之殘留氧與水份。然後,使反應容器以液態氮急冷,並使NH3
在反應容器中凝結。將約40克NH3
裝填在反應容器中。於關閉反應容器之高壓閥後,將反應容器轉移至兩區帶爐子。在結晶化作用區帶中,將反應容器加熱至510℃,並在溶解區帶中加熱至550℃,歷經最初24小時,然後在結晶化作用區帶中調整至575℃,並在溶解區帶中調整至510℃。於8天後,釋出氨,並打開反應容器。所生長GaN鑄錠之總厚度為1.30毫米。
在Ga-極性表面上生長之顯微鏡影像係顯示龜裂,然而N-極性表面顯示無龜裂且相對較平坦之表面,參閱圖2。在N-極性表面上所度量之晶體結構顯示自002反射之單一吸收峰。吸收峰之半極大值處之全寬度(FWHM)為209反正割。另一方面,Ga-極性表面顯示自002反射之多重鮮明吸收峰,具有FWHM為2740反正割。得自Ga-極性側之多重鮮明吸收峰表示高品質晶粒之聚集。在不同極性下生長之此種差異係因種晶之弓形彎曲所造成,如圖3中所圖示。種晶之弓形彎曲會造成在Ga-極性表面上之生長成為在張力變形下,且易於龜裂,然而在N-極性表面上之生長係於壓縮變形下,其會防止生長之龜裂。
與初始晶種弓形彎曲分佈形態比較,弓形彎曲分佈形態係在N-極性生長中被改良,如圖3中所示。於一種生長場合中,在N-極性側上弓形彎曲之晶格半徑係自1.15 m(凸的)(其係為晶種弓形彎曲之最初晶格半徑)改良至130 m(凸的)。
藉由採集N-極性生長作為未來鑄錠之晶種,與弓形彎曲有關聯之問題可被降至最低,亦允許在Ga-極性表面上之隨後無裂紋生長。此外,生長厚度之最佳化應產生經改良之結晶度,供未來鑄錠用。
亦確認使用誤切基材作為種晶係有助於改良晶體品質。在一種生長場合中,氨熱生長係以兩種誤切晶種進行,一種具有7°偏離c-平面,而另一種具有3°偏離c-平面。從最初晶種之002反射之X-射線擺動曲線之FWHM對於7°偏離與3°偏離係個別為605反正割與405反正割。於生長後,X-射線擺動曲線之FWHM對於7°偏離與3°偏離係個別變成410反正割與588反正割。自此結果,確認多達大約7°之誤切係有助於改良結構品質。誤切可為高達10°或15°偏離軸,而非高達3°或高達7°偏離軸。
使用如方法1所指示之類似生長條件,厚達1.3毫米之GaN鑄錠係於8天生長後獲得。在Ga極性表面上生長之顯微鏡影像顯示龜裂,如圖4中所示,然而N-極性表面顯示無龜裂且相對較平坦之表面。如關於方法1所解釋,在Ga-極性側上之晶體係由許多高品質晶粒所組成。因此,預期在龜裂發生之後,採集Ga-極性表面上生長之經鬆弛區域作為種晶,係使得未來鑄錠能夠顯示自初始種晶之經改良結晶度。預期所採集之區域具有Ga-極性表面積在約0.1平方毫米與約5.0平方毫米之間。
上文所討論之氨熱生長技術可用以產生一系列鑄錠,且藉由選擇具有結晶學取向之特定區域供隨後晶種用,III-氮化物材料之結晶度可經改良。以不完備c-平面種晶開始,第一個鑄錠主要生長方向係沿著c-軸,如圖5中所示。由於龜裂問題,故在Ga-極性表面上之生長可能不適合持續生長。然後,將第一個鑄錠使用金屬線鋸切片,以產生a-平面晶圓。使用a-平面晶圓作為晶種,接著新鑄錠藉由氨熱生長技術產生,如圖6中所示。然後,將第二個鑄錠使用金屬線鋸切片,以產生a-平面晶圓。藉由選擇未含有初始種晶之晶圓作為新晶種,可產生第三個鑄錠,其完全未含初始種晶,如圖7中所示。接著,可將此第三個鑄錠以任何特定取向使用金屬線鋸切片,以產生具經改良結晶度之種晶。
此方法係藉由限制位錯之大小與作用、弓形彎曲及晶種之變形而促進生長。此方法係以極低穿線位錯密度與經改良之弓形彎曲分佈形態實現大塊晶體生長。此方法可經修改,以使用半極性或m-平面生長代替a-平面取向。
本發明係揭示具有經改良晶體結構之第III族氮化物晶圓之新穎生產方法。使用數種可能策略,所生長鑄錠之特定區域可被採集作為未來晶種,以急驟地改良未來鑄錠之品質,與初始晶種作比較。此外,係提出一種方法,以生產一系列可產生結晶性品質之急驟改良之鑄錠。此等改良事項會改良在晶圓上所製造任何光學裝置之效率。
下列參考資料係併於本文供參考:
[1].S.Porowski,氮化物半導體之MRS網際網路期刊,Res.4S1,(1999)G1.3。
[2]T.Inoue,Y.Seki,O.Oda,S.Kurai,Y.Yamada及T.Taguchi,Phys.Stat.Sol.(b),223(2001)第15頁。
[3]M.Aoki,H.Yamane,M.Shimada,S.Sarayama及F.J.DiSalvo,J.Cryst.Growth 242(2002)第70頁。
[4]T.Iwahashi,F.Kawamura,M.Morishita,Y.Kai,M.Yoshimura,Y.Mori及T.Sasaki,J.Cryst Growth 253(2003)第1頁。
[5]T.Hashimoto,F.Wu,J.S.Speck,S.Nakamura,Jpn.J.Appl.Phys.46(2007)L889。
[6]R.Dwiliski,R.Doradziski,J.Garczyski,L.Sierzputowski,Y.Kanbara,美國專利6,656,615。
[7]K.Fujito,T.Hashimoto,S.Nakamura,國際專利申請案號PCT/US2005/024239,WO07008198。
[8]T.Hashimoto,M.Saito,S.Nakamura,國際專利申請案號PCT/US2007/008743,WO07117689。參閱2007年4月6日提出申請之US20070234946,美國專利申請案序號11/784,339。
上文各參考資料係以其全文併入供參考,猶如完全於本文提出一般,且特別是關於使用氨熱方法及使用氮化鎵基材之生長方法之描述。
此係作為本發明較佳具體實施例描述之結論。下文係描述用於達成本發明之一些替代具體實施例。
雖然較佳具體實施例係描述GaN之生長作為一項實例,但其他第III族氮化物晶體可被使用於本發明中。第III族氮化物材料可包括至少一種第III族元素B、Al、Ga及In。
於較佳具體實施例中,係提出特定生長設備與切片設備。但是,符合本文中所述條件之其他構造或設計將具有與此等實例相同之利益。
本發明對晶圓之大小未具有任何限制,只要可獲得相同利益即可。
本發明較佳具體實施例之前文描述已針對說明與描述之目的而提出。並不意欲為毫無遺漏或將本發明限制於所揭示之明確形式。在明白上述陳述內容之後,許多修正與變型是可能的。所意欲的是,本發明之範圍並非受限於此詳細說明,而是隨文所附之請求項。
現在參考附圖,其中同樣參考編號係在全文中表示相應之部份:
圖1 III:氮化物纖維鋅礦晶格之主要結晶學平面。於左邊為歷史上使用之c-平面,於右邊為非極性a-平面與m-平面。
圖2藉由氨熱方法所生長GaN之N-極性切割面之光學顯微照片。於N-極性切割面上生長400微米之後,未發現龜裂。尺度棒係等於100微米。
圖3在可能種晶上之弓形彎曲分佈形態之誇大圖解,及所形成生長之預期弓形彎曲分佈形態。
圖4藉由氨熱方法所生長GaN之Ga-極性切割面之顯微鏡照片。於Ga-極性切割面上生長400微米之後,發現龜裂。尺度棒係等於100微米。
圖5關於此系列中第一個鑄錠之氨熱生長前(左邊)與後(右邊)之晶種c-平面生長取向之圖解。線條表示金屬線之方向,以將經取向之晶圓自鑄錠切出。
圖6關於此系列中第二個鑄錠之氨熱生長前(左邊)與後(右邊)之晶種a-平面生長取向之圖解。線條表示金屬線之方向,以將經取向之晶圓自鑄錠切出。
圖7關於此系列中第三個鑄錠之氨熱生長前(左邊)與後(右邊)之晶種a-平面生長取向之圖解。線條表示金屬線之方向,以將經取向之晶圓自鑄錠切出。
Claims (18)
- 一種生長第III族氮化物晶體之方法,其包括:(a)藉由氨熱方法,在最初種晶上生長第III族氮化物鑄錠直至該第III族氮化物鑄錠之c-平面晶格之曲率半徑大於最初種晶之c-平面晶格之曲率半徑且該第III族氮化物鑄錠之結晶學晶格沿著切片方向之弓形彎曲係翻轉自最初種晶沿著最初種晶之c-平面晶格之弓形彎曲方向;(b)自該鑄錠之氮-極性側切出一或多個晶圓;(c)使用具有經晶格曲率改良之自該鑄錠之氮-極性側取得之該一或多個晶圓作為新種晶,以供藉由氨熱方法之一或多個鑄錠之隨後生長。
- 如請求項1之方法,其中最初種晶係使用異質外延沉積製程形成。
- 如請求項2之方法,其進一步包括自隨後生長之鑄錠切下新晶圓,及在新鑄錠之隨後氨熱生長中使用該新晶圓作為晶種。
- 如請求項1-3中任一項之方法,其中晶圓係沿著自c-平面錯取向達3至15度之平面切片。
- 一種用於生長第III族氮化物晶體之方法,其包括:(a)藉由氨熱方法,在種晶之c-切割面上生長鑄錠至厚度大於5毫米;(b)將鑄錠沿著a-平面或半極性平面切片,以形成一或多個晶種; (c)使用該a-平面或半極性平面晶種,以生長新鑄錠;(d)將該新鑄錠沿著該a-平面或半極性平面切片;(e)使用自該新鑄錠且未含初始種晶之任何最初材料之a-平面或半極性平面晶圓,以生長其他新鑄錠。
- 如請求項5之方法,其中僅a-平面切片存在。
- 如請求項6之方法,其進一步包括將請求項5之步驟(e)中所獲得之鑄錠切片,以產生c-平面晶圓。
- 如請求項5至7中任一項之方法,其中結晶學晶格沿著切片方向之弓形彎曲係自初始種晶改良。
- 如請求項5之方法,其中僅半極性平面切片存在。
- 一種獨立的GaN晶圓,其具有凸向+c方向之c-平面晶格弓形彎曲。
- 如請求項10之GaN晶圓,其中晶圓之基面為具有誤切在10度內之c-平面。
- 如請求項10之GaN晶圓,其中晶圓之基面為具有誤切在10度內之m-平面。
- 如請求項10之GaN晶圓,其中晶圓之基面為具有誤切在10度內之a-平面。
- 如請求項10至13中任一項之GaN晶圓,其中該晶圓係藉由氨熱方法生長。
- 如請求項1至3中任一項之方法,其中該第III族氮化物晶體包含GaN。
- 如請求項1至3中任一項之方法,其中該在最初種晶上生長第III族氮化物鑄錠之步驟包含在該最初種晶之c-平面上 成長該鑄錠。
- 如請求項5至7及9中任一項之方法,其中該第III族氮化物晶體包含GaN。
- 如請求項5至7及9中任一項之方法,其中步驟(c)及(e)中之該新鑄錠係藉由熱氨法成長。
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US9985102B2 (en) | 2018-05-29 |
US20090309105A1 (en) | 2009-12-17 |
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JP2013056831A (ja) | 2013-03-28 |
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TW201002879A (en) | 2010-01-16 |
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WO2009149299A1 (en) | 2009-12-10 |
JP2016034899A (ja) | 2016-03-17 |
JP5885650B2 (ja) | 2016-03-15 |
JP5431359B2 (ja) | 2014-03-05 |
US20170198407A1 (en) | 2017-07-13 |
WO2009149299A8 (en) | 2010-07-29 |
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