WO2009047894A1 - Iii族窒化物結晶基板の製造方法、iii族窒化物結晶基板、iii族窒化物結晶基板を用いた半導体装置 - Google Patents

Iii族窒化物結晶基板の製造方法、iii族窒化物結晶基板、iii族窒化物結晶基板を用いた半導体装置 Download PDF

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Publication number
WO2009047894A1
WO2009047894A1 PCT/JP2008/002834 JP2008002834W WO2009047894A1 WO 2009047894 A1 WO2009047894 A1 WO 2009047894A1 JP 2008002834 W JP2008002834 W JP 2008002834W WO 2009047894 A1 WO2009047894 A1 WO 2009047894A1
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Prior art keywords
group iii
iii nitride
nitride crystal
crystal substrate
producing
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PCT/JP2008/002834
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English (en)
French (fr)
Inventor
Kouichi Hiranaka
Hisashi Minemoto
Takeshi Hatakeyama
Osamu Yamada
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Panasonic Corporation
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Priority to JP2009536920A priority Critical patent/JP5493861B2/ja
Priority to US12/681,718 priority patent/US20100213576A1/en
Publication of WO2009047894A1 publication Critical patent/WO2009047894A1/ja

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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
    • C—CHEMISTRY; METALLURGY
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    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B9/00—Single-crystal growth from melt solutions using molten solvents
    • C30B9/04—Single-crystal growth from melt solutions using molten solvents by cooling of the solution
    • C30B9/08—Single-crystal growth from melt solutions using molten solvents by cooling of the solution using other solvents
    • C30B9/10—Metal solvents
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    • H01S5/00—Semiconductor lasers
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    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
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    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
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    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP

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  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
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  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electromagnetism (AREA)
  • Inorganic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Nanotechnology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Semiconductor Lasers (AREA)

Abstract

　III族窒化物結晶基板の製造方法である。フラックスを用いた成長法によりIII族窒化物結晶を形成する。結晶形成の際の結晶内部への入り込みによりIII族窒化物結晶基板の内部に入り込んでいるフラックスをIII族窒化物結晶基板の外部へ排出させることが可能な最低温度以上、かつIII族窒化物結晶基板の表面を分解させない最高温度以下で、III族窒化物結晶基板を熱処理する。
PCT/JP2008/002834 2007-10-09 2008-10-08 Iii族窒化物結晶基板の製造方法、iii族窒化物結晶基板、iii族窒化物結晶基板を用いた半導体装置 WO2009047894A1 (ja)

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JP2009536920A JP5493861B2 (ja) 2007-10-09 2008-10-08 Ｉｉｉ族窒化物結晶基板の製造方法
US12/681,718 US20100213576A1 (en) 2007-10-09 2008-10-08 Method for producing group iii nitride crystal substrate, group iii nitride crystal substrate, and semiconductor device using group iii nitride crystal substrate

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JP2007262815 2007-10-09
JP2007-262815 2007-10-09

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JP2011148655A (ja) * 2010-01-21 2011-08-04 Hitachi Cable Ltd 導電性ｉｉｉ族窒化物結晶の製造方法、導電性ｉｉｉ族窒化物基板の製造方法及び導電性ｉｉｉ族窒化物基板
WO2012141317A1 (ja) * 2011-04-15 2012-10-18 三菱化学株式会社 Iii族窒化物結晶の製造方法およびiii族窒化物結晶
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US9045844B2 (en) 2011-08-10 2015-06-02 Ngk Insulators, Ltd. Method for peeling group 13 element nitride film
JP2016117646A (ja) * 2011-04-15 2016-06-30 三菱化学株式会社 Ｉｉｉ族窒化物結晶の製造方法およびｉｉｉ族窒化物結晶
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US8435879B2 (en) * 2005-12-12 2013-05-07 Kyma Technologies, Inc. Method for making group III nitride articles
US9064706B2 (en) 2006-11-17 2015-06-23 Sumitomo Electric Industries, Ltd. Composite of III-nitride crystal on laterally stacked substrates
JP5332168B2 (ja) 2006-11-17 2013-11-06 住友電気工業株式会社 Ｉｉｉ族窒化物結晶の製造方法
US20100213576A1 (en) * 2007-10-09 2010-08-26 Panasonic Corporation Method for producing group iii nitride crystal substrate, group iii nitride crystal substrate, and semiconductor device using group iii nitride crystal substrate
EP2286007B1 (en) 2008-06-12 2018-04-04 SixPoint Materials, Inc. Method for testing gallium nitride wafers and method for producing gallium nitride wafers
WO2010045567A1 (en) * 2008-10-16 2010-04-22 Sixpoint Materials, Inc. Reactor design for growing group iii nitride crystals and method of growing group iii nitride crystals
JP5808208B2 (ja) * 2011-09-15 2015-11-10 株式会社サイオクス 窒化物半導体基板の製造方法
JP6314019B2 (ja) * 2014-03-31 2018-04-18 ニッタ・ハース株式会社 半導体基板の研磨方法
JP6606879B2 (ja) * 2015-06-15 2019-11-20 富士電機株式会社 窒化物半導体装置の製造方法
JP6604205B2 (ja) * 2016-01-05 2019-11-13 国立大学法人大阪大学 窒化物結晶基板の製造方法および結晶成長用基板
US9776852B2 (en) * 2016-02-01 2017-10-03 Taiwan Semiconductor Manufacturing Company Ltd. Method for controlling surface roughness in MEMS structure
JP7117690B2 (ja) * 2017-09-21 2022-08-15 国立大学法人大阪大学 Ｉｉｉ－ｖ族化合物結晶の製造方法および半導体装置の製造方法
EP3686323A4 (en) * 2017-09-22 2021-07-28 Tokuyama Corporation GROUP III NITRIDE SINGLE CRYSTAL SUBSTRATE
JP2019205970A (ja) * 2018-05-29 2019-12-05 日本電信電話株式会社 半導体光電極
JP6976464B2 (ja) * 2019-02-07 2021-12-08 日本碍子株式会社 窒化アルミニウムガリウム単結晶の育成方法および融液組成物

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