WO2013022228A3 - 누설전류 차단 효과가 우수한 질화물 반도체 발광소자 및 그 제조 방법 - Google Patents

누설전류 차단 효과가 우수한 질화물 반도체 발광소자 및 그 제조 방법 Download PDF

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Publication number
WO2013022228A3
WO2013022228A3 PCT/KR2012/006179 KR2012006179W WO2013022228A3 WO 2013022228 A3 WO2013022228 A3 WO 2013022228A3 KR 2012006179 W KR2012006179 W KR 2012006179W WO 2013022228 A3 WO2013022228 A3 WO 2013022228A3
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WO
WIPO (PCT)
Prior art keywords
emitting element
semiconductor light
nitride semiconductor
current blocking
manufacturing same
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PCT/KR2012/006179
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English (en)
French (fr)
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WO2013022228A2 (ko
Inventor
최원진
박정원
Original Assignee
일진머티리얼즈 주식회사
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Application filed by 일진머티리얼즈 주식회사 filed Critical 일진머티리얼즈 주식회사
Priority to EP12821528.2A priority Critical patent/EP2743995A4/en
Priority to JP2014524920A priority patent/JP2014522126A/ja
Priority to US14/237,302 priority patent/US9006779B2/en
Priority to CN201280038920.1A priority patent/CN103748697A/zh
Publication of WO2013022228A2 publication Critical patent/WO2013022228A2/ko
Publication of WO2013022228A3 publication Critical patent/WO2013022228A3/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)

Abstract

본 발명은 질화물 반도체 발광소자 및 그 제조 방법을 공개한다. 본 발명의 질화물 반도체 발광소자는 기판과 n형 질화물층 사이에 형성된 전류 차단부, 상기 n형 질화물층의 상부면에 형성된 활성층, 및 상기 활성층의 상부면에 형성된 p형 질화물층을 포함하고, 상기 전류 차단부는 AlxGa(1-x)N층이고, 상기 Al 함량(x)과 층 두께(㎛)의 곱이 0.01~0.06 범위를 갖는 것을 특징으로 한다. 따라서, 본 발명의 질화물 반도체 발광소자는 누설 전류의 발생을 방지하는 전류 차단부를 형성하여 발광 효율을 향상시킬 수 있다.
PCT/KR2012/006179 2011-08-08 2012-08-02 누설전류 차단 효과가 우수한 질화물 반도체 발광소자 및 그 제조 방법 WO2013022228A2 (ko)

Priority Applications (4)

Application Number Priority Date Filing Date Title
EP12821528.2A EP2743995A4 (en) 2011-08-08 2012-08-02 LIGHT-EMITTING NITRIDE-SEMICONDUCTOR COMPONENT WITH EXCELLENT LEAKAGE-LOCKING EFFECT AND METHOD OF MANUFACTURING THEREOF
JP2014524920A JP2014522126A (ja) 2011-08-08 2012-08-02 漏れ電流遮断効果に優れる窒化物半導体発光素子及びその製造方法
US14/237,302 US9006779B2 (en) 2011-08-08 2012-08-02 Nitride semiconductor light-emitting element having superior leakage current blocking effect and method for manufacturing same
CN201280038920.1A CN103748697A (zh) 2011-08-08 2012-08-02 漏电阻断效果优秀的氮化物半导体发光器件及其制备方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2011-0078779 2011-08-08
KR1020110078779A KR101262725B1 (ko) 2011-08-08 2011-08-08 누설전류 차단 효과가 우수한 질화물 반도체 발광소자 및 그 제조 방법

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WO2013022228A2 WO2013022228A2 (ko) 2013-02-14
WO2013022228A3 true WO2013022228A3 (ko) 2013-04-04

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Country Status (7)

Country Link
US (1) US9006779B2 (ko)
EP (1) EP2743995A4 (ko)
JP (1) JP2014522126A (ko)
KR (1) KR101262725B1 (ko)
CN (1) CN103748697A (ko)
TW (1) TWI518945B (ko)
WO (1) WO2013022228A2 (ko)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI566428B (zh) * 2013-03-27 2017-01-11 南臺科技大學 水平式氮化物發光二極體
CN108550664B (zh) * 2018-04-02 2020-08-07 江西壹创军融光电科技有限公司 一种基于砷化镓衬底的平面式led外延结构及其制作方法
KR102273917B1 (ko) * 2019-10-15 2021-07-07 주식회사 썬다이오드코리아 마이크로 디스플레이의 화소 및 이의 제조방법
CN113380932A (zh) * 2020-03-10 2021-09-10 隆达电子股份有限公司 覆晶式发光二极管的结构及其制造方法
CN111987198A (zh) * 2020-08-31 2020-11-24 西安电子科技大学 基于Fe掺杂的GaN基横向结构发光二极管及制作方法
CN112289902A (zh) * 2020-10-29 2021-01-29 錼创显示科技股份有限公司 微型发光二极管
US11949043B2 (en) 2020-10-29 2024-04-02 PlayNitride Display Co., Ltd. Micro light-emitting diode
CN113451470B (zh) * 2020-12-31 2022-05-31 重庆康佳光电技术研究院有限公司 电子阻挡层、发光器件及其制备方法和显示装置
CN117832348B (zh) * 2024-03-06 2024-05-03 江西兆驰半导体有限公司 发光二极管外延片及其制备方法、发光二极管

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20040062636A (ko) * 2001-11-15 2004-07-07 미츠비시 덴센 고교 가부시키가이샤 자외선 발광장치
KR20080067536A (ko) * 2007-01-16 2008-07-21 엘지이노텍 주식회사 질화물 반도체 발광소자 및 그 제조 방법
KR20080069768A (ko) * 2007-01-24 2008-07-29 엘지이노텍 주식회사 질화물 반도체 발광소자 및 그 제조 방법
KR20090070980A (ko) * 2007-12-27 2009-07-01 삼성전기주식회사 질화물 반도체 발광 소자 및 그 제조 방법
KR20110045056A (ko) * 2008-09-16 2011-05-03 쇼와 덴코 가부시키가이샤 Ⅲ족 질화물 반도체 발광 소자의 제조 방법, ⅲ족 질화물 반도체 발광 소자 및 램프

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2296264A1 (fr) * 1974-12-24 1976-07-23 Radiotechnique Compelec Procede de realisation de dispositif semi-conducteur a heterojonction
JPS5612787A (en) * 1979-07-10 1981-02-07 Stanley Electric Co Ltd Matrix indicator by light emitting diode and manufacture therefor
JPH0864913A (ja) * 1994-08-26 1996-03-08 Rohm Co Ltd 半導体発光素子およびその製法
DE19640003B4 (de) * 1996-09-27 2005-07-07 Siemens Ag Halbleitervorrichtung und Verfahren zu dessen Herstellung
US6051847A (en) * 1997-05-21 2000-04-18 Matsushita Electric Industrial Co., Ltd. Gallium nitride compound-based semiconductor light emitting device and process for producing gallium nitride compound-based semiconductor thin film
JP3201475B2 (ja) * 1998-09-14 2001-08-20 松下電器産業株式会社 半導体装置およびその製造方法
JP2001077412A (ja) * 1999-09-02 2001-03-23 Sanyo Electric Co Ltd 半導体素子およびその製造方法
US6730990B2 (en) 2000-06-30 2004-05-04 Seiko Epson Corporation Mountable microstructure and optical transmission apparatus
JP4977957B2 (ja) * 2004-03-29 2012-07-18 日亜化学工業株式会社 半導体発光素子
US7615798B2 (en) * 2004-03-29 2009-11-10 Nichia Corporation Semiconductor light emitting device having an electrode made of a conductive oxide
US7042018B2 (en) * 2004-09-22 2006-05-09 Formosa Epitaxy Incorporation Structure of GaN light-emitting diode
US7265374B2 (en) * 2005-06-10 2007-09-04 Arima Computer Corporation Light emitting semiconductor device
KR101189399B1 (ko) * 2006-02-20 2012-10-10 엘지이노텍 주식회사 질화물 반도체 발광소자 및 그 제조 방법
JP2007266577A (ja) * 2006-03-03 2007-10-11 Matsushita Electric Ind Co Ltd 窒化物半導体装置及びその製造方法
JP4637781B2 (ja) * 2006-03-31 2011-02-23 昭和電工株式会社 ＧａＮ系半導体発光素子の製造方法
JP2008182110A (ja) * 2007-01-25 2008-08-07 Matsushita Electric Ind Co Ltd 窒化物半導体発光装置
CN101488539B (zh) * 2008-01-17 2010-12-08 晶元光电股份有限公司 发光元件
WO2009120990A2 (en) * 2008-03-27 2009-10-01 Nitek, Inc. Ultraviolet light emitting diode/laser diode with nested superlattice
JP5057398B2 (ja) * 2008-08-05 2012-10-24 シャープ株式会社 窒化物半導体発光素子およびその製造方法
KR101018217B1 (ko) 2008-10-01 2011-02-28 삼성엘이디 주식회사 질화물 반도체 소자
JP5330017B2 (ja) * 2009-02-17 2013-10-30 株式会社東芝 不揮発性半導体記憶装置、及びその製造方法
US9337407B2 (en) 2009-03-31 2016-05-10 Epistar Corporation Photoelectronic element and the manufacturing method thereof
JP4681684B1 (ja) * 2009-08-24 2011-05-11 Ｄｏｗａエレクトロニクス株式会社 窒化物半導体素子およびその製造方法
KR101754900B1 (ko) * 2010-04-09 2017-07-06 엘지이노텍 주식회사 발광 소자

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20040062636A (ko) * 2001-11-15 2004-07-07 미츠비시 덴센 고교 가부시키가이샤 자외선 발광장치
KR20080067536A (ko) * 2007-01-16 2008-07-21 엘지이노텍 주식회사 질화물 반도체 발광소자 및 그 제조 방법
KR20080069768A (ko) * 2007-01-24 2008-07-29 엘지이노텍 주식회사 질화물 반도체 발광소자 및 그 제조 방법
KR20090070980A (ko) * 2007-12-27 2009-07-01 삼성전기주식회사 질화물 반도체 발광 소자 및 그 제조 방법
KR20110045056A (ko) * 2008-09-16 2011-05-03 쇼와 덴코 가부시키가이샤 Ⅲ족 질화물 반도체 발광 소자의 제조 방법, ⅲ족 질화물 반도체 발광 소자 및 램프

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP2743995A4 *

Also Published As

Publication number Publication date
US20140167067A1 (en) 2014-06-19
EP2743995A4 (en) 2015-02-11
US9006779B2 (en) 2015-04-14
TWI518945B (zh) 2016-01-21
JP2014522126A (ja) 2014-08-28
WO2013022228A2 (ko) 2013-02-14
TW201308663A (zh) 2013-02-16
EP2743995A2 (en) 2014-06-18
KR101262725B1 (ko) 2013-05-09
KR20130016692A (ko) 2013-02-18
CN103748697A (zh) 2014-04-23

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