WO2008152945A1 - 半導体発光装置及びその製造方法 - Google Patents

半導体発光装置及びその製造方法 Download PDF

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Publication number
WO2008152945A1
WO2008152945A1 PCT/JP2008/060209 JP2008060209W WO2008152945A1 WO 2008152945 A1 WO2008152945 A1 WO 2008152945A1 JP 2008060209 W JP2008060209 W JP 2008060209W WO 2008152945 A1 WO2008152945 A1 WO 2008152945A1
Authority
WO
WIPO (PCT)
Prior art keywords
semiconductor light
major surface
emitting device
manufacturing
same
Prior art date
Application number
PCT/JP2008/060209
Other languages
English (en)
French (fr)
Inventor
Kazuaki Tsutsumi
Yohei Ito
Yasuo Nakanishi
Shunji Nakata
Original Assignee
Rohm Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co., Ltd. filed Critical Rohm Co., Ltd.
Priority to US12/452,049 priority Critical patent/US20100102341A1/en
Priority to DE112008001614T priority patent/DE112008001614T5/de
Priority to CN200880020294A priority patent/CN101689585A/zh
Priority to JP2009519229A priority patent/JPWO2008152945A1/ja
Publication of WO2008152945A1 publication Critical patent/WO2008152945A1/ja

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen

Abstract

　第１の主面とその第１の主面に対向する第２の主面とを有し、第１の主面と第２の主面間の側面が粗面である透明基板と、透明基板の第１の主面上に配置され、窒化物半導体を積層してなる窒化物半導体層を有する半導体発光素子とを備える。
PCT/JP2008/060209 2007-06-15 2008-06-03 半導体発光装置及びその製造方法 WO2008152945A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
US12/452,049 US20100102341A1 (en) 2007-06-15 2008-06-03 Semiconductor light emitting device and method for manufacturing the same
DE112008001614T DE112008001614T5 (de) 2007-06-15 2008-06-03 Halbleiterlichtemissionsvorrichtung und Verfahren zu ihrer Herstellung
CN200880020294A CN101689585A (zh) 2007-06-15 2008-06-03 半导体发光装置及其制造方法
JP2009519229A JPWO2008152945A1 (ja) 2007-06-15 2008-06-03 半導体発光装置及びその製造方法

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP2007-158569 2007-06-15
JP2007-159095 2007-06-15
JP2007159095 2007-06-15
JP2007158569 2007-06-15
JP2007290618 2007-11-08
JP2007-290618 2007-11-08

Publications (1)

Publication Number Publication Date
WO2008152945A1 true WO2008152945A1 (ja) 2008-12-18

Family

ID=40129555

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/060209 WO2008152945A1 (ja) 2007-06-15 2008-06-03 半導体発光装置及びその製造方法

Country Status (7)

Country Link
US (1) US20100102341A1 (ja)
JP (1) JPWO2008152945A1 (ja)
KR (1) KR20100020521A (ja)
CN (1) CN101689585A (ja)
DE (1) DE112008001614T5 (ja)
TW (1) TW200903869A (ja)
WO (1) WO2008152945A1 (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013004957A (ja) * 2011-06-17 2013-01-07 National Cheng Kung Univ 発光素子構造及びその製造方法
US8455332B2 (en) * 2009-05-01 2013-06-04 Bridgelux, Inc. Method and apparatus for manufacturing LED devices using laser scribing
JP2016525286A (ja) * 2013-07-18 2016-08-22 コーニンクレッカ フィリップス エヌ ヴェＫｏｎｉｎｋｌｉｊｋｅ Ｐｈｉｌｉｐｓ Ｎ．Ｖ． 発光デバイスのウェファのダイシング

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US7952106B2 (en) * 2009-04-10 2011-05-31 Everlight Electronics Co., Ltd. Light emitting diode device having uniform current distribution and method for forming the same
TWM366757U (en) * 2009-04-27 2009-10-11 Forward Electronics Co Ltd AC LED packaging structure
US8673662B2 (en) * 2009-07-29 2014-03-18 Tien-Tsai Lin Light-emitting diode cutting method and product thereof
JP5623791B2 (ja) * 2010-06-01 2014-11-12 株式会社ディスコ サファイア基板の加工方法
JP2012089709A (ja) * 2010-10-20 2012-05-10 Disco Abrasive Syst Ltd ワークの分割方法
US9502614B2 (en) * 2014-06-04 2016-11-22 Formosa Epitaxy Incorporation Light emitting diode chip, light emitting device, and wafer-level structure of light emitting diode
JP2016219547A (ja) * 2015-05-18 2016-12-22 ローム株式会社 半導体発光素子
WO2020116234A1 (ja) * 2018-12-04 2020-06-11 ハリマ化成株式会社 ハードコート層付モールド樹脂およびその製造方法

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JP2004103672A (ja) * 2002-09-06 2004-04-02 Toshiba Corp 半導体発光素子および半導体発光装置
JP2004247411A (ja) * 2003-02-12 2004-09-02 Sharp Corp 半導体発光素子および製造方法
JP2005033196A (ja) * 2003-06-19 2005-02-03 Showa Denko Kk 半導体ウエーハのダイシング方法および発光ダイオードチップ
JP2006114820A (ja) * 2004-10-18 2006-04-27 Matsushita Electric Works Ltd 発光素子とその製造方法
JP2006253441A (ja) * 2005-03-11 2006-09-21 Kumamoto Univ ブレード加工方法

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US5900650A (en) * 1995-08-31 1999-05-04 Kabushiki Kaisha Toshiba Semiconductor device and method of manufacturing the same
JP3449201B2 (ja) 1997-11-28 2003-09-22 日亜化学工業株式会社 窒化物半導体素子の製造方法
US6413839B1 (en) * 1998-10-23 2002-07-02 Emcore Corporation Semiconductor device separation using a patterned laser projection
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JP2003124151A (ja) * 2001-10-17 2003-04-25 Disco Abrasive Syst Ltd サファイア基板のダイシング方法
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CN1241253C (zh) * 2002-06-24 2006-02-08 丰田合成株式会社 半导体元件的制造方法
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CN1759492B (zh) * 2003-03-10 2010-04-28 丰田合成株式会社 固体元件装置的制造方法
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JP5159040B2 (ja) * 2005-03-31 2013-03-06 株式会社光波 低温成長バッファ層の形成方法および発光素子の製造方法
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Patent Citations (5)

* Cited by examiner, † Cited by third party
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JP2004103672A (ja) * 2002-09-06 2004-04-02 Toshiba Corp 半導体発光素子および半導体発光装置
JP2004247411A (ja) * 2003-02-12 2004-09-02 Sharp Corp 半導体発光素子および製造方法
JP2005033196A (ja) * 2003-06-19 2005-02-03 Showa Denko Kk 半導体ウエーハのダイシング方法および発光ダイオードチップ
JP2006114820A (ja) * 2004-10-18 2006-04-27 Matsushita Electric Works Ltd 発光素子とその製造方法
JP2006253441A (ja) * 2005-03-11 2006-09-21 Kumamoto Univ ブレード加工方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8455332B2 (en) * 2009-05-01 2013-06-04 Bridgelux, Inc. Method and apparatus for manufacturing LED devices using laser scribing
JP2013004957A (ja) * 2011-06-17 2013-01-07 National Cheng Kung Univ 発光素子構造及びその製造方法
JP2016525286A (ja) * 2013-07-18 2016-08-22 コーニンクレッカ フィリップス エヌ ヴェＫｏｎｉｎｋｌｉｊｋｅ Ｐｈｉｌｉｐｓ Ｎ．Ｖ． 発光デバイスのウェファのダイシング

Also Published As

Publication number Publication date
CN101689585A (zh) 2010-03-31
TW200903869A (en) 2009-01-16
KR20100020521A (ko) 2010-02-22
US20100102341A1 (en) 2010-04-29
DE112008001614T5 (de) 2010-04-29
JPWO2008152945A1 (ja) 2010-08-26

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