WO2011126209A3 - Pn접합 및 쇼트키 접합을 갖는 다중 태양 전지 및 이의 제조 방법 - Google Patents

Pn접합 및 쇼트키 접합을 갖는 다중 태양 전지 및 이의 제조 방법 Download PDF

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Publication number
WO2011126209A3
WO2011126209A3 PCT/KR2011/000988 KR2011000988W WO2011126209A3 WO 2011126209 A3 WO2011126209 A3 WO 2011126209A3 KR 2011000988 W KR2011000988 W KR 2011000988W WO 2011126209 A3 WO2011126209 A3 WO 2011126209A3
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Prior art keywords
junction
solar cell
manufacturing
semiconductor layer
schottky
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PCT/KR2011/000988
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English (en)
French (fr)
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WO2011126209A2 (ko
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김준동
한창수
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한국기계연구원
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Priority to DE112011101267T priority Critical patent/DE112011101267T5/de
Priority to CN201180016255.1A priority patent/CN102844881B/zh
Priority to JP2013502448A priority patent/JP5420109B2/ja
Publication of WO2011126209A2 publication Critical patent/WO2011126209A2/ko
Publication of WO2011126209A3 publication Critical patent/WO2011126209A3/ko

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    • H—ELECTRICITY
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    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H01L31/03925—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including AIIBVI compound materials, e.g. CdTe, CdS
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/078—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier including different types of potential barriers provided for in two or more of groups H01L31/062 - H01L31/075
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    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)

Abstract

본 발명은 PN접합 및 쇼트키 접합을 갖는 다중 태양 전지 및 이의 제조 방법에 관한 것으로서, 본 발명의 일 실시예에 따른 태양 전지는 P형 반도체층과 N형 반도체층을 갖는 PN 반도체층과 상기 PN 반도체층의 제1 면에 오믹 접합된 제1 전극과 상기 PN 반도체층의 상기 제1 면과 반대방향을 향하는 제2 면에 쇼트키 접합된 쇼트키 접합층, 및 상기 쇼트키 접합층과 접하도록 형성된 제2 전극을 포함한다.
PCT/KR2011/000988 2010-04-06 2011-02-15 Pn접합 및 쇼트키 접합을 갖는 다중 태양 전지 및 이의 제조 방법 WO2011126209A2 (ko)

Priority Applications (3)

Application Number Priority Date Filing Date Title
DE112011101267T DE112011101267T5 (de) 2010-04-06 2011-02-15 Mehrlagige Photovoltaikzelle mit P/N- und Schottky-Übergang und Verfahren zu deren Herstellung
CN201180016255.1A CN102844881B (zh) 2010-04-06 2011-02-15 具有pn结和肖特基结的多路太阳能电池及其制造方法
JP2013502448A JP5420109B2 (ja) 2010-04-06 2011-02-15 Ｐｎ接合およびショットキー接合を有する多重太陽電池およびその製造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020100031547A KR101003808B1 (ko) 2010-04-06 2010-04-06 Ｐｎ접합 및 쇼트키 접합을 갖는 다중 태양 전지 및 이의 제조 방법
KR10-2010-0031547 2010-04-06

Publications (2)

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WO2011126209A2 WO2011126209A2 (ko) 2011-10-13
WO2011126209A3 true WO2011126209A3 (ko) 2011-12-15

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PCT/KR2011/000988 WO2011126209A2 (ko) 2010-04-06 2011-02-15 Pn접합 및 쇼트키 접합을 갖는 다중 태양 전지 및 이의 제조 방법

Country Status (5)

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JP (1) JP5420109B2 (ko)
KR (1) KR101003808B1 (ko)
CN (1) CN102844881B (ko)
DE (1) DE112011101267T5 (ko)
WO (1) WO2011126209A2 (ko)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101264368B1 (ko) * 2011-12-07 2013-05-14 한국기계연구원 다층 구조의 쇼트키 접합층을 갖는 태양 전지
KR101520804B1 (ko) * 2013-01-30 2015-05-15 한국표준과학연구원 광대역 파장 흡수 및 에너지변환을 이용한 고효율 태양전지
CN103137770B (zh) * 2013-02-21 2015-10-28 苏州科技学院 一种石墨烯/Si p-n双结太阳能电池及其制备方法
KR102387737B1 (ko) * 2013-11-04 2022-04-15 콜럼버스 포토볼타익스 엘엘씨 태양 전지
US10100415B2 (en) * 2014-03-21 2018-10-16 Hypersolar, Inc. Multi-junction artificial photosynthetic cell with enhanced photovoltages
KR20170053556A (ko) 2015-11-06 2017-05-16 (주)에이피텍 태양전지모듈

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JP2004039751A (ja) * 2002-07-01 2004-02-05 Toyota Motor Corp 光起電力素子
KR20070031964A (ko) * 2004-06-30 2007-03-20 크리 인코포레이티드 전류 차단 구조들을 가지는 발광소자들 및 전류 차단구조들을 가지는 발광소자들의 제조방법들
KR20090132850A (ko) * 2008-06-23 2009-12-31 한국기계연구원 투명 태양 전지 및 이의 제조 방법

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JPS6057945A (ja) 1983-09-09 1985-04-03 Fujitsu Ltd 半導体装置
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Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004039751A (ja) * 2002-07-01 2004-02-05 Toyota Motor Corp 光起電力素子
KR20070031964A (ko) * 2004-06-30 2007-03-20 크리 인코포레이티드 전류 차단 구조들을 가지는 발광소자들 및 전류 차단구조들을 가지는 발광소자들의 제조방법들
KR20090132850A (ko) * 2008-06-23 2009-12-31 한국기계연구원 투명 태양 전지 및 이의 제조 방법

Also Published As

Publication number Publication date
WO2011126209A2 (ko) 2011-10-13
KR101003808B1 (ko) 2010-12-23
DE112011101267T5 (de) 2013-05-08
JP2013524501A (ja) 2013-06-17
JP5420109B2 (ja) 2014-02-19
CN102844881B (zh) 2016-04-13
CN102844881A (zh) 2012-12-26

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