WO2012057517A3 - 화합물 반도체 장치 및 화합물 반도체 제조방법 - Google Patents

화합물 반도체 장치 및 화합물 반도체 제조방법 Download PDF

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WO2012057517A3
WO2012057517A3 PCT/KR2011/008019 KR2011008019W WO2012057517A3 WO 2012057517 A3 WO2012057517 A3 WO 2012057517A3 KR 2011008019 W KR2011008019 W KR 2011008019W WO 2012057517 A3 WO2012057517 A3 WO 2012057517A3
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compound semiconductor
manufacturing
layer
semiconductor device
graphene
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PCT/KR2011/008019
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English (en)
French (fr)
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WO2012057517A2 (ko
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안성진
이동건
김석한
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주식회사 엘지실트론
금오공과대학교 산학협력단
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Priority to JP2013536510A priority Critical patent/JP5676004B2/ja
Priority to EP11836609.5A priority patent/EP2634825B1/en
Priority to US13/880,708 priority patent/US9214596B2/en
Publication of WO2012057517A2 publication Critical patent/WO2012057517A2/ko
Publication of WO2012057517A3 publication Critical patent/WO2012057517A3/ko

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    • H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
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    • B82—NANOTECHNOLOGY
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    • H01L33/12—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
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    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/734—Fullerenes, i.e. graphene-based structures, such as nanohorns, nanococoons, nanoscrolls or fullerene-like structures, e.g. WS2 or MoS2 chalcogenide nanotubes, planar C3N4, etc.

Abstract

본 발명에 따른 화합물 반도체 제조방법은, 제 1 기판 및 제 1 화합물 반도체층 중에 선택되는 어느 하나 상에 그래핀에서 유래한 물질층을 형성하는 것; 적어도 상기 그래핀에서 유래한 물질층 상에, 적어도 한 층의 제 2 화합물 반도체층을 형성하는 것; 및 상기 그래핀에서 유래한 물질층을 변화시켜, 상기 적어도 한 층의 제 2 화합물 반도체층을 분리해 해는 것을 포함한다.
PCT/KR2011/008019 2010-10-26 2011-10-26 화합물 반도체 장치 및 화합물 반도체 제조방법 WO2012057517A2 (ko)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2013536510A JP5676004B2 (ja) 2010-10-26 2011-10-26 化合物半導体の製造方法
EP11836609.5A EP2634825B1 (en) 2010-10-26 2011-10-26 Method for manufacturing a compound semiconductor device
US13/880,708 US9214596B2 (en) 2010-10-26 2011-10-26 Compound semiconductor devices and methods for fabricating the same

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020100104552A KR101180176B1 (ko) 2010-10-26 2010-10-26 화합물 반도체 장치 및 그 제조 방법
KR10-2010-0104552 2010-10-26

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WO2012057517A2 WO2012057517A2 (ko) 2012-05-03
WO2012057517A3 true WO2012057517A3 (ko) 2012-07-26

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PCT/KR2011/008019 WO2012057517A2 (ko) 2010-10-26 2011-10-26 화합물 반도체 장치 및 화합물 반도체 제조방법
PCT/KR2011/008009 WO2012057512A2 (ko) 2010-10-26 2011-10-26 화합물 반도체 장치 및 그 제조 방법

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US (2) US9214596B2 (ko)
EP (2) EP2634824B1 (ko)
JP (2) JP5676004B2 (ko)
KR (1) KR101180176B1 (ko)
WO (2) WO2012057517A2 (ko)

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