JP5676004B2 - 化合物半導体の製造方法 - Google Patents
化合物半導体の製造方法 Download PDFInfo
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Description
Claims (19)
- 第1基板と第1化合物半導体層から選択されるいずれか一つの上にグラフェンに由来した物質層を形成する工程と、
前記グラフェンに由来した物質層上に、少なくとも一層の第2化合物半導体層を形成する工程と、
前記グラフェンに由来した物質層を変化させて、前記少なくとも一層の第2化合物半導体層を分離する工程と、
を含む化合物半導体の製造方法。 - 前記グラフェンに由来した物質層はグラフェン層である請求項1に記載の化合物半導体の製造方法。
- 前記グラフェン層は、化学処理方法、熱処理方法及び光処理方法中のいずれかによって酸化グラフェン層に変化させられる請求項2に記載の化合物半導体の製造方法。
- 前記グラフェンに由来した物質層はグラフェン層であり、前記グラフェンに由来した物質層が変化した物質層は酸化グラフェン層であり、
前記酸化グラフェン層は前記グラフェン層より厚く、前記少なくとも一層の第2化合物半導体層が持ち上げられる請求項1に記載の化合物半導体の製造方法。 - 前記グラフェンに由来した物質層は酸化グラフェン層である請求項1に記載の化合物半導体の製造方法。
- 前記酸化グラフェン層は、化学処理方法、熱処理方法及び光処理方法中のいずれかによって変化される請求項5に記載の化合物半導体の製造方法。
- 前記熱処理方法によって、前記酸化グラフェン層は、当該酸化グラフェン層より厚さが厚い変形酸化グラフェン層に変化する請求項6に記載の化合物半導体の製造方法。
- 前記化学処理方法及び前記光処理方法によって、前記酸化グラフェン層は還元されて類似グラフェン層に変化して厚さが減少する請求項6に記載の化合物半導体の製造方法。
- 前記光処理方法は、透過深さ選択型光処理装置を用いて前記光処理装置から照射された光が前記酸化グラフェン層のみに作用するように制御する請求項6に記載の化合物半導体の製造方法。
- 前記グラフェンに由来した物質層は、少なくとも一層以上のグラフェンに由来したシートを含み、
前記グラフェンに由来した物質層は、前記基板または前記第1化合物半導体層を前記第2化合物半導体層に露出させる請求項1に記載の化合物半導体の製造方法。 - 前記少なくとも一層の第2化合物半導体層のうち、前記第1化合物半導体層と接する層は前記第1化合物半導体層と同一性質である請求項10に記載の化合物半導体の製造方法。
- 前記第1化合物半導体層の下に、別のグラフェンに由来した物質層がさらに形成される工程と、
前記別のグラフェンに由来した物質層の下に、第2基板が形成される工程と、
を含む請求項1に記載の化合物半導体の製造方法。 - 前記別のグラフェンに由来した物質層は、前記第1化合物半導体層が前記第2の基板に接するように形成される請求項12に記載の化合物半導体の製造方法。
- 前記少なくとも一層の第2化合物半導体層中のいずれかの層を分離する工程は、超音波処理で行われる請求項1に記載の化合物半導体の製造方法。
- 前記少なくとも一層の第2化合物半導体層には、n型化合物半導体層、活性層、p型化合物半導体層、及びp型電極層が含まれる請求項1に記載の化合物半導体の製造方法。
- 前記p型電極層には反射層が含まれる請求項15に記載の化合物半導体の製造方法。
- 前記少なくとも一層の第2化合物半導体層において、前記グラフェンに由来した物質層と接していた層には、n型電極層が形成される請求項1に記載の化合物半導体の製造方法。
- 前記グラフェンに由来した物質層または前記別のグラフェンに由来した物質層は、被形成面の全体範囲に形成される請求項12に記載の化合物半導体の製造方法。
- ベース物質上にグラフェンに由来した物質層を形成する工程と、
前記グラフェンに由来した物質層上に、少なくとも一層の第2化合物半導体層を形成する工程と、
前記グラフェンに由来した物質層に酸化反応または還元反応を起こして、前記少なくとも一層の第2化合物半導体層を分離する工程と、
を含む化合物半導体の製造方法。
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