JP2013545299A - 化合物半導体装置及びその製造方法 - Google Patents
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Abstract
【選択図】図4
Description
Claims (22)
- 基板と、
前記基板上の酸化グラフェン層と、
前記酸化グラフェン層上の第1化合物半導体層と、
を含む化合物半導体装置。 - 前記酸化グラフェン層は、複数の酸化グラフェンシートを含み、前記基板の表面の一部は、前記複数の酸化グラフェンシートの間から露出される請求項1に記載の化合物半導体装置。
- 前記第1化合物半導体層は、前記複数の酸化グラフェンシートの間から露出される前記基板の表面と接触する請求項2に記載の化合物半導体装置。
- 前記基板と前記第1化合物半導体層との間にバッファ層をさらに含み、前記バッファ層は、AlN、AlGaN、GaN、InGaN、InNまたはAlGaInN中の少なくとも一つを含む請求項1に記載の化合物半導体装置。
- 前記バッファ層の厚さは1nm〜200nmである請求項4に記載の化合物半導体装置。
- 前記基板と前記酸化グラフェン層の間に第2化合物半導体層をさらに含む請求項1に記載の化合物半導体装置。
- 前記酸化グラフェン層は、複数の酸化グラフェンシートを含み、前記第2化合物半導体層の表面の一部は、前記複数の酸化グラフェンシートの間から露出される請求項6に記載の化合物半導体装置。
- 前記第1化合物半導体層は、AlN、AlGaN、GaN、InGaN、InNまたはAlGaInN中の少なくとも一つを含む窒化物半導体層である請求項1に記載の化合物半導体装置。
- 前記基板は、サファイア、スピネル、GaAs、InP、SiC、またはSi中の少なくとも一つを含む請求項1に記載の化合物半導体装置。
- 前記酸化グラフェン層は、複数の酸化グラフェンシートを含み、前記酸化グラフェンシートの長軸の長さは、50nm〜100μmであり、厚さは0.3nm〜2μmである請求項1に記載の化合物半導体装置。
- 前記酸化グラフェン層は、機能化されたグラフェン層(fuctionalized graphene sheet)を含む請求項1に記載の化合物半導体装置。
- 基板と、
前記基板上のn型化合物半導体層と、
前記n型化合物半導体層上の活性層と、
前記基板と前記活性層との間に提供され、複数の酸化グラフェンシートを含む酸化グラフェン層と、
前記活性層上のp型化合物半導体層と、
を含む発光素子。 - 前記n型化合物半導体層は、第1半導体層と第2半導体層を含み、前記酸化グラフェン層は、前記第1半導体層と前記第2半導体層との間に提供される請求項12に記載の発光素子。
- 前記酸化グラフェン層は、前記基板と前記n型化合物半導体層との間に提供される請求項12に記載の発光素子。
- 基板上に、複数の酸化グラフェンシートを含む酸化グラフェン層を形成する工程と、
前記複数の酸化グラフェンシートの間の露出した領域から第1化合物半導体層を選択的に成長させる工程と、
を含む化合物半導体装置の製造方法。 - 前記酸化グラフェン層は、前記基板の表面上に形成され、前記第1化合物半導体層は、前記複数の酸化グラフェンシートの間の露出された前記基板から選択的に成長される請求項15に記載の化合物半導体装置の製造方法。
- 前記基板と前記第1化合物半導体層との間にバッファ層を形成する工程をさらに含む請求項16に記載の化合物半導体の製造方法。
- 前記バッファ層は、AlN、AlGaN、GaN、InGaN、InNまたはAlGaInN中の少なくとも一つを含み、前記バッファ層を形成する工程は400℃〜1200℃で行われる請求項17に記載の化合物半導体の製造方法。
- 前記基板と前記酸化グラフェン層の間に第2化合物半導体層を形成する工程をさらに含み、
前記酸化グラフェン層は、前記第2化合物半導体層の表面と接触するように形成される請求項15に記載の化合物半導体装置の製造方法。 - 前記第1化合物半導体層は、前記複数の酸化グラフェンシートの間から露出された前記第2化合物半導体層の表面から選択的に成長される請求項19に記載の化合物半導体装置の製造方法。
- 前記酸化グラフェン層を形成する工程は、
酸化グラファイトから複数の酸化グラフェンシートを剥離する工程と、
前記複数の酸化グラフェンシートをスピンコート、ラングミュア-ブロジェット法、ディップコーティング、スプレーコーティング、またはドロップコーティング中の少なくとも一つの方法で前記基板上に塗布する工程と、
を含む請求項15に記載の化合物半導体装置の製造方法。 - 前記第1化合物半導体層の選択的成長は650℃〜1200℃で行われる請求項15に記載の化合物半導体装置の製造方法。
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JP2019517113A (ja) * | 2016-12-27 | 2019-06-20 | エルジー・ケム・リミテッド | 分離膜及びこれを含むリチウム−硫黄電池 |
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KR101180176B1 (ko) | 2012-09-05 |
EP2634824A4 (en) | 2016-01-06 |
US8878233B2 (en) | 2014-11-04 |
JP2014501035A (ja) | 2014-01-16 |
EP2634824B1 (en) | 2018-12-12 |
US20130285013A1 (en) | 2013-10-31 |
EP2634824A2 (en) | 2013-09-04 |
KR20120043313A (ko) | 2012-05-04 |
WO2012057517A2 (ko) | 2012-05-03 |
US20130200424A1 (en) | 2013-08-08 |
EP2634825A4 (en) | 2016-01-06 |
EP2634825A2 (en) | 2013-09-04 |
US9214596B2 (en) | 2015-12-15 |
WO2012057517A3 (ko) | 2012-07-26 |
WO2012057512A2 (ko) | 2012-05-03 |
JP5779655B2 (ja) | 2015-09-16 |
EP2634825B1 (en) | 2018-12-26 |
WO2012057512A3 (ko) | 2012-07-26 |
JP5676004B2 (ja) | 2015-02-25 |
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