WO2012138903A3 - Dual active layers for semiconductor devices and methods of manufacturing the same - Google Patents

Dual active layers for semiconductor devices and methods of manufacturing the same Download PDF

Info

Publication number
WO2012138903A3
WO2012138903A3 PCT/US2012/032388 US2012032388W WO2012138903A3 WO 2012138903 A3 WO2012138903 A3 WO 2012138903A3 US 2012032388 W US2012032388 W US 2012032388W WO 2012138903 A3 WO2012138903 A3 WO 2012138903A3
Authority
WO
WIPO (PCT)
Prior art keywords
methods
semiconductor devices
active layers
manufacturing
same
Prior art date
Application number
PCT/US2012/032388
Other languages
French (fr)
Other versions
WO2012138903A2 (en
Inventor
Michael Marrs
Original Assignee
Arizona Board Of Regents, For And On Behalf Of Arizona State University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Arizona Board Of Regents, For And On Behalf Of Arizona State University filed Critical Arizona Board Of Regents, For And On Behalf Of Arizona State University
Priority to EP12767894.4A priority Critical patent/EP2695195A4/en
Priority to CN201280017495.8A priority patent/CN103548146A/en
Priority to KR1020137029528A priority patent/KR20130138328A/en
Priority to SG2013074125A priority patent/SG194073A1/en
Priority to JP2014504000A priority patent/JP2014513425A/en
Publication of WO2012138903A2 publication Critical patent/WO2012138903A2/en
Publication of WO2012138903A3 publication Critical patent/WO2012138903A3/en
Priority to US14/029,502 priority patent/US20140008651A1/en
Priority to US14/642,563 priority patent/US9991311B2/en
Priority to US14/642,550 priority patent/US9601530B2/en
Priority to US15/997,558 priority patent/US20180286912A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/165—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on translational movement of particles in a fluid under the influence of an applied field
    • G02F1/166—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on translational movement of particles in a fluid under the influence of an applied field characterised by the electro-optical or magneto-optical effect
    • G02F1/167—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on translational movement of particles in a fluid under the influence of an applied field characterised by the electro-optical or magneto-optical effect by electrophoresis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel

Abstract

Some embodiments include dual active layers for semiconductor devices. Other embodiments of related devices and methods are also disclosed.
PCT/US2012/032388 2008-12-02 2012-04-05 Dual active layers for semiconductor devices and methods of manufacturing the same WO2012138903A2 (en)

Priority Applications (9)

Application Number Priority Date Filing Date Title
EP12767894.4A EP2695195A4 (en) 2011-04-07 2012-04-05 Dual active layers for semiconductor devices and methods of manufacturing the same
CN201280017495.8A CN103548146A (en) 2011-04-07 2012-04-05 Dual active layers for semiconductor devices and methods of manufacturing the same
KR1020137029528A KR20130138328A (en) 2011-04-07 2012-04-05 Dual active layers for semiconductor devices and methods of manufacturing the same
SG2013074125A SG194073A1 (en) 2011-04-07 2012-04-05 Dual active layers for semiconductor devices and methods of manufacturing the same
JP2014504000A JP2014513425A (en) 2011-04-07 2012-04-05 Double active layer for semiconductor device and method of manufacturing the same
US14/029,502 US20140008651A1 (en) 2008-12-02 2013-09-17 Dual active layers for semiconductor devices and methods of manufacturing the same
US14/642,563 US9991311B2 (en) 2008-12-02 2015-03-09 Dual active layer semiconductor device and method of manufacturing the same
US14/642,550 US9601530B2 (en) 2008-12-02 2015-03-09 Dual active layer semiconductor device and method of manufacturing the same
US15/997,558 US20180286912A1 (en) 2008-12-02 2018-06-04 Dual active layer semiconductor device and method of manufacturing the same

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201161472992P 2011-04-07 2011-04-07
US61/472,992 2011-04-07

Related Parent Applications (3)

Application Number Title Priority Date Filing Date
US201161472992P Continuation-In-Part 2008-12-02 2011-04-07
US13/298,451 Continuation US8999778B2 (en) 2008-12-02 2011-11-17 Method of providing a flexible semiconductor device at high temperatures and flexible semiconductor device thereof
US13/298,451 Continuation-In-Part US8999778B2 (en) 2008-12-02 2011-11-17 Method of providing a flexible semiconductor device at high temperatures and flexible semiconductor device thereof

Related Child Applications (3)

Application Number Title Priority Date Filing Date
PCT/US2013/058284 Continuation-In-Part WO2014039693A1 (en) 2008-12-02 2013-09-05 Dual active layer semiconductor device and method of manufacturing the same
PCT/US2013/058293 Continuation-In-Part WO2014039698A1 (en) 2008-12-02 2013-09-05 Dual active layer semiconductor device and method of manufacturing the same
US14/029,502 Continuation US20140008651A1 (en) 2008-12-02 2013-09-17 Dual active layers for semiconductor devices and methods of manufacturing the same

Publications (2)

Publication Number Publication Date
WO2012138903A2 WO2012138903A2 (en) 2012-10-11
WO2012138903A3 true WO2012138903A3 (en) 2013-01-31

Family

ID=46969824

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2012/032388 WO2012138903A2 (en) 2008-12-02 2012-04-05 Dual active layers for semiconductor devices and methods of manufacturing the same

Country Status (6)

Country Link
EP (1) EP2695195A4 (en)
JP (1) JP2014513425A (en)
KR (1) KR20130138328A (en)
CN (1) CN103548146A (en)
SG (1) SG194073A1 (en)
WO (1) WO2012138903A2 (en)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9991311B2 (en) 2008-12-02 2018-06-05 Arizona Board Of Regents On Behalf Of Arizona State University Dual active layer semiconductor device and method of manufacturing the same
JP5832780B2 (en) 2011-05-24 2015-12-16 株式会社半導体エネルギー研究所 Manufacturing method of semiconductor device
KR102127781B1 (en) * 2013-11-29 2020-06-30 엘지디스플레이 주식회사 Thin film transistor array substrate and method for fabricating the same
WO2015156891A2 (en) 2014-01-23 2015-10-15 Arizona Board Of Regents, Acting For And On Behalf Of Arizona State University Method of providing a flexible semiconductor device and flexible semiconductor device thereof
WO2017034645A2 (en) 2015-06-09 2017-03-02 ARIZONA BOARD OF REGENTS, a body corporate for THE STATE OF ARIZONA for and on behalf of ARIZONA STATE UNIVERSITY Method of providing an electronic device and electronic device thereof
US10381224B2 (en) 2014-01-23 2019-08-13 Arizona Board Of Regents On Behalf Of Arizona State University Method of providing an electronic device and electronic device thereof
WO2015175353A1 (en) 2014-05-13 2015-11-19 Arizona Board Of Regents, For And On Behalf Of Arizona State University Method of providing an electronic device and electronic device thereof
US9741742B2 (en) 2014-12-22 2017-08-22 Arizona Board Of Regents, A Body Corporate Of The State Of Arizona, Acting For And On Behalf Of Arizona State University Deformable electronic device and methods of providing and using deformable electronic device
US10446582B2 (en) 2014-12-22 2019-10-15 Arizona Board Of Regents On Behalf Of Arizona State University Method of providing an imaging system and imaging system thereof
WO2017218898A2 (en) 2016-06-16 2017-12-21 Arizona Board Of Regents On Behalf Of Arizona State University Electronic devices and related methods
CN107093557B (en) * 2017-04-26 2020-04-21 京东方科技集团股份有限公司 Manufacturing method of thin film transistor and manufacturing method of array substrate
CN108807547B (en) * 2017-05-05 2021-01-22 京东方科技集团股份有限公司 Thin film transistor and preparation method thereof, array substrate and preparation method thereof
CN107527956A (en) * 2017-08-17 2017-12-29 京东方科技集团股份有限公司 Thin film transistor (TFT) and the method for preparing thin film transistor (TFT)
CN108508643A (en) 2018-04-03 2018-09-07 京东方科技集团股份有限公司 Display base plate and its manufacturing method, display device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030201465A1 (en) * 2002-04-18 2003-10-30 Daisuke Ryuzaki Semiconductor manufacturing method for low-k insulating film
US20090072122A1 (en) * 2007-09-13 2009-03-19 Hiroshi Tada Image sensor and method for manufacturing the same
WO2010138811A2 (en) * 2009-05-29 2010-12-02 Arizona Board Of Regents, For And On Behalf Of Arizona State University Method of providing a flexible semiconductor device at high temperatures and flexible semiconductor device thereof

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4870403B2 (en) * 2005-09-02 2012-02-08 財団法人高知県産業振興センター Thin film transistor manufacturing method
JP5064747B2 (en) * 2005-09-29 2012-10-31 株式会社半導体エネルギー研究所 Semiconductor device, electrophoretic display device, display module, electronic device, and method for manufacturing semiconductor device
JP5467728B2 (en) * 2008-03-14 2014-04-09 富士フイルム株式会社 Thin film field effect transistor and method of manufacturing the same
JP5258467B2 (en) * 2008-09-11 2013-08-07 富士フイルム株式会社 Thin film field effect transistor and display device using the same
US8704216B2 (en) * 2009-02-27 2014-04-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR101578694B1 (en) * 2009-06-02 2015-12-21 엘지디스플레이 주식회사 Method of fabricating oxide thin film transistor

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030201465A1 (en) * 2002-04-18 2003-10-30 Daisuke Ryuzaki Semiconductor manufacturing method for low-k insulating film
US20090072122A1 (en) * 2007-09-13 2009-03-19 Hiroshi Tada Image sensor and method for manufacturing the same
WO2010138811A2 (en) * 2009-05-29 2010-12-02 Arizona Board Of Regents, For And On Behalf Of Arizona State University Method of providing a flexible semiconductor device at high temperatures and flexible semiconductor device thereof

Also Published As

Publication number Publication date
JP2014513425A (en) 2014-05-29
CN103548146A (en) 2014-01-29
EP2695195A4 (en) 2014-09-17
KR20130138328A (en) 2013-12-18
EP2695195A2 (en) 2014-02-12
SG194073A1 (en) 2013-11-29
WO2012138903A2 (en) 2012-10-11

Similar Documents

Publication Publication Date Title
WO2012138903A3 (en) Dual active layers for semiconductor devices and methods of manufacturing the same
EP2571052A4 (en) Semiconductor device and method of manufacturing the same
EP2622644A4 (en) Semiconductor devices and methods for manufacturing the same
EP2992562A4 (en) Stress relieving semiconductor layer
TWI562286B (en) Oxide semiconductor devices, methods of manufacturing oxide semiconductor devices, display devices having oxide semiconductor devices, methods of manufacturing display devices having oxide semiconductor devices
EP3018696B8 (en) Manufacturing method for semiconductor substrate
EP2629975A4 (en) Devices, systems, and methods for the fabrication of tissue
EP2573809A4 (en) Semiconductor device and method for manufacturing the same
EP2660869A4 (en) Semiconductor device and method for manufacturing same
SG195105A1 (en) Absorbent core for disposable absorbent articles
PL2552801T3 (en) Packaging, method of manufacturing the packaging
WO2012057517A3 (en) Compound semiconductor device and method for manufacturing a compound semiconductor
IN2015DN00551A (en)
SG10201501458TA (en) Semiconductor-metal-on-insulator structures, methods of forming such structures, and semiconductor devices including such structures
HK1180455A1 (en) Isolation area between semiconductor devices having additional active area
EP2668678A4 (en) Thermoelectric device and thermoelectric module having the same, and method of manufacturing the same
EP2676300A4 (en) Methods of forming semiconductor films including i2-ii-iv-vi4 and i2-(ii,iv)-iv-vi4 semiconductor films and electronic devices including the semiconductor films
EP2564420A4 (en) Semiconductor devices having improved adhesion and methods of fabricating the same
EP2714539A4 (en) Paperboard corner, and method of manufacturing the same
EP2631934A4 (en) Semiconductor junction structure and method for manufacturing semiconductor junction structure
GB2483405B (en) Semiconductor structure and method for manufacturing the same
EP2546869A4 (en) Semiconductor device, and process for manufacture of semiconductor device
WO2013048177A3 (en) Selenophene-fused aromatic compound and manufacturing method thereof
GB2503639B (en) Semiconductor device structure and method for manufacturing the same
EP2595181B8 (en) Compound semiconductor device and manufacturing method thereof

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 12767894

Country of ref document: EP

Kind code of ref document: A2

ENP Entry into the national phase

Ref document number: 2014504000

Country of ref document: JP

Kind code of ref document: A

WWE Wipo information: entry into national phase

Ref document number: 2012767894

Country of ref document: EP

NENP Non-entry into the national phase

Ref country code: DE

ENP Entry into the national phase

Ref document number: 20137029528

Country of ref document: KR

Kind code of ref document: A